8 UNIT 400MA DARLINGTON TRANSISTOR ARRAY

www.DataSheet4U.com POWEREX MITSUBISHI SEMICONDUCTOR M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY PIN CONFIGURATION (TOP VIEW) DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. M54583P IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 INPUT IN5→ 5 IN6→ 6 18 →O1 17 →O2 16 →O3 15 →O4 14 →O5 13 →O6 12 →O7 11 →O8 10 VCC OUTPUT FEATURES q High breakdown voltage (BVCEO ≥ 50V) q High-current driving (Ic(max) = 400mA) q Active L-level input q With input clamping diodes q Wide operating temperature range (Ta = –20 to +75°C) IN7→ 7 IN8→ 8 GND 9 Outline 18P4G M54583FP APPLICATION Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and printers, and MOS-bipolar logic IC interfaces INPUT NC 1 20 NC IN1→ 2 IN2→ 3 IN3→ 4 IN4→ 5 IN5→ 6 IN6→ 7 19 →O1 18 →O2 17 →O3 16 →O4 15 →O5 14 →O6 13 →O7 12 →O8 11 OUTPUT FUNCTION The M54583 is produced by adding PNP transistors to M54523 inputs. Eight circuits having active L-level inputs are provided. Resistance of 7kΩ and diode are provided in series between each input and PNP transistor base. The input diode is intended to prevent the flow of current from the input to the VCC. Without this diode, the current flow from “H” input to the VCC and the “L” input circuits is activated, in such case where one of the inputs of the 8 circuits is “H” and the others are “L” to save power consumption. The diode is inserted to prevent such misoperation. This device is most suitable for a driver using NMOS IC output especially for the driver of current sink. Collector current is 400mA maximum. Collector-emitter supply voltage is 50V. The 54583FP is enclosed in a molded small flat package, enabling space saving design. IN7→ 8 IN8→ 9 GND→ 10 VCC Outline 20P2N-A NC : No connection CIRCUIT DIAGRAM (EACH CIRCUIT) VCC 7k INPUT 7k 2.7k OUTPUT 7.2k GND 3k The eight circuits share the VCC and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω Aug.1999 www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR POWEREX ABSOLUTE MAXIMUM RATINGS Symbol VCC VCEO VI IC Pd Topr Tstg Parameter Supply voltage Collector-emitter voltage Input voltage Collector current Power dissipation Operating temperature Storage temperature (Unless otherwise noted, Ta = –20 ~ +75°C) (Unless otherwise noted, Ta = –20 ~ +75°C) M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY Conditions Output, H Current per circuit output, L Ta = 25°C, when mounted on board Ratings 10 –0.5 ~ +50 –0.5 ~ VCC 400 1.79/1.1 –20 ~ +75 –55 ~ +125 Unit V V V mA W °C °C RECOMMENDED OPERATING CONDITIONS Symbol VCC Supply voltage Parameter min 4 0 0 VCC–0.7 0 Limits typ 5 — — — — max 8 350 Unit V IC VIH VIL VCC = 5V, Duty Cycle P : no more than 10% Collector current FP : no more than 5% Per channel VCC = 5V, Duty Cycle P : no more than 34% FP : no more than 15% “H” input voltage “L” input voltage mA 200 VCC VCC–3.6 V V ELECTRICAL CHARACTERISTICS Symbol V (BR) CEO VCE (sat) II ICC hFE Parameter (Unless otherwise noted, Ta = –20 ~ +75°C) Test conditions ICEO = 100µA, VCC = 8V IC = 350mA IC = 200mA Limits min 50 — — — — 2000 typ+ — 1.1 0.98 –320 — 10000 max — 2.2 1.6 –600 3 — Unit V V µA mA — Collector-emitter breakdown voltage Collector-emitter saturation voltage VI = VCC–3.6V Input current Supply current (one circuit coming on) DC amplification factor VI = VCC–3.6V VCC = 5V, VI = VCC–3.6V VCE = 4V, VCC = 5V, IC = 350mA, Ta = 25°C + : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min — — typ 130 3200 max — — Unit ns ns NOTE 1 TEST CIRCUIT INPUT VCC Measured device VO TIMING DIAGRAM INPUT 50% RL OUTPUT 50% PG 50Ω CL OUTPUT 50% 50% ton (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VI = 0.4 to 4V (2) Input-output conditions : RL = 30Ω, VO = 10V, VCC = 4V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes toff Aug.1999 www.DataSheet4U.com POWEREX TYPICAL CHARACTERISTICS MITSUBISHI SEMICONDUCTOR M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY Thermal Derating Factor Characteristics 2.0 M54583P Output Saturation Voltage Collector Current Characteristics 500 Power dissipation Pd (W) 1.5 M54583FP Collector current Ic (mA) 400 300 1.0 200 0.5 VI = 1.4V VCC= 5V Ta = 75°C Ta = 25°C Ta = –20°C 100 0 0 25 50 75 100 0 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (°C) Duty-Cycle-Collector Characteristics (M54583P) 500 1 2 3 4 5 6 7 8 500 Output saturation voltage VCE (sat) (V) Duty-Cycle-Collector Characteristics (M54583P) Collector current Ic (mA) 300 Collector current Ic (mA) 400 400 1 300 2 3 4 5 76 8 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •VCC = 5V •Ta = 25°C 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •VCC = 5V •Ta = 75°C 100 100 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty-Cycle-Collector Characteristics (M54583FP) 500 1 500 Duty cycle (%) Duty-Cycle-Collector Characteristics (M54583FP) Collector current Ic (mA) Collector current Ic (mA) 400 400 300 2 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •VCC = 5V •Ta = 25°C 300 1 3 4 5 6 7 8 100 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •Vcc =5.0V •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C 2 3 4 100 100 0 0 20 40 60 80 0 0 20 40 60 80 100 5 6 7 8 Duty cycle (%) Duty cycle (%) Aug.1999 www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR POWEREX Input Characteristics –1.0 DC amplification factor hFE M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DC Amplification Factor Collector Current Characteristics 104 7 5 3 2 –0.8 Input current II (mA) VCC = 5V Ta = 75°C Ta = 25°C Ta = –20°C –0.6 103 7 5 3 2 VCC = 4V VCE = 4V Ta = 75°C Ta = 25°C Ta = –20°C –0.4 –0.2 0 0 1 2 3 4 5 102 1 10 2 3 5 7 102 2 3 5 7 103 Supply voltage-Input voltage VCC–VI (V) Collector current Ic (mA) Grounded Emitter Transfer Characteristics 400 VCC = 4V VCE = 4V Supply Current Characteristics 5 VI = 0V Ta = 75°C Ta = 25°C Ta = –20°C Collector current Ic (mA) 300 Supply current Icc (mA) Ta = 75°C Ta = 25°C Ta = –20°C 4 3 200 2 100 1 0 0 1.0 2.0 3.0 4.0 0 0 2 4 6 8 10 Supply voltage-Input voltage VCC–VI (V) Supply voltage VCC (V) Aug.1999