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LS4448 /LS4148/LS914B
Pb
RoHS
COMPLIANCE
500mW Hermetically Sealed Glass Fast Switching Diodes
QUADRO MINI MELF
Features
Fast switching device (TRR< 4.0nS) Quadro Mini-MELF package Surface device type mounting Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and leads are readily solderable RoHS compliant Matte Tin (Sn) lead finish 1st band indicates cathode
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25oCambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation Working Inverse Voltage Non-repetitive Peak Forward Current Average Rectified Current Peak Forward Surge Current Operating Junction Temperature Storage Temperature Range
Symbol Pd WIV IFM Io
IFSURGE
TJ TSTG Symbol
IR=100uA IR=5uA
Value 500 75 450 150 2 175 -65 to + 200 Min
100 75 0.62
-
Units mW V mA mA A O C O C Max Units V
0.72 1.0 1.0 25 5
Electrical Characteristics
Type Number
Breakdown Voltage Forward Voltage LS4448, LS914B IF=5.0mA LS4148 IF= 10mA LS4448, LS914B IF =100mA Reverse Leakage Current VR=20V VR=75V Junction Capacitance VR=0, f=1.0MHz
BV VF IR
V nA uA pF nS
4.0 Cj Reverse Recovery Time (Note 1) 4.0 trr Notes: 1. Reverse Recovery Test Conditions: IF=IR=10mA, RL=100Ω, IRR=1mA
Version: B07
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RATINGS AND CHARACTERISTIC CURVES (LS4448/LS4148/LS914B)
1000 LS4148
IF - Forward Current (mA)
1000
100 Scattering Limit 10
IR- Reverse Current (nA)
Tj = 25 °C 100
Scattering Limit 10
1 Tj = 25 °C 0 0.4 0.8 1.2 1.6 2.0
0.1
1 1 10 VR- Reverse Voltage (V) 100
VF - Forward Voltage (V)
Figure 1. Forward Current vs. Forward Voltage
Figure 3. Reverse Current vs. Reverse Voltage
1000 CD - Diode Capacitance (pF) LS4448
IF - Forward Current (mA)
3.0 2.5 2.0 1.5 1.0 0.5 0 2.0 0.1 1 10 100 VR - Reverse Voltage (V) f = 1 MHz Tj = 25 °C
100 Scattering Limit 10
1 Tj = 25 °C 0.1 0 0.4 0.8 1.2 1.6 VF - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
Figure 4. Diode Capacitance vs. Reverse Voltage
Version: B07
