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SEMICONDUCTOR
TECHNICAL DATA
KDS160E
SILICON EPITAXIAL PLANAR DIODE
ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES
Low Forward Voltage. Fast Reverse Recovery Time. Small Total capacitance.
CATHODE MARK
Small Package : ESC.
C 1
E
2 D F
MAXIMUM RATING (Ta=25
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 85 80 300 100 2 150 -55 150 UNIT V V mA mA A mW
1. ANODE 2. CATHODE
B
A
DIM A B C D E F
MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05
ESC
Marking
Type Name
UF
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance Reverse Recovery Time IR CT trr
)
TEST CONDITION IF=1mA IF=10mA IF=100mA VR=80V VR=0V, f=1MHz IF=10mA MIN. TYP. 0.60 0.72 0.90 0.9 1.6 MAX. 1.20 0.5 3.0 4.0 A pF nS V UNIT
SYMBOL
2001. 12. 13
Revision No : 3
1/2
KDS160E
I F - VF
10 FORWARD CURRENT I F (mA) 10 10
C Ta =2 Ta 5 C =-2 5 C Ta =1 00
3
I R - VR
10 REVERSE CURRENT I R (µA)
Ta=100 C Ta=75 C
2
1
10
-1
1 10 10
-1
Ta=50 C
-2
10
Ta=25 C
-2
0
0.2
0.4
0.6
0.8
1.0
1.2
10
-3
0
20
40
60
80
FORWARD VOLTAGE V F (V)
REVERSE VOLTAGE VR (V)
C T - VR
REVERSE RECOVERY TIME t rr (ns) 2.0 TOTAL CAPACITANCE CT (pF) 1.6 1.2 0.8 0.4 0
f=1MHz Ta=25 C
t rr
100 50 30
- IF
Ta=25 C Fig. 1
10 5 3
1 0.5 0.1 0.3 1 3 10 30 100 FORWARD CURRENT I F (mA)
0.1
0.3
1
3
10
30
100
REVERSE VOLTAGE VR (R)
Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM 0
INPUT
0.01µF
DUT OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) I F =10mA 0 IR
WAVEFORM
0.1 I R
50Ω
2kΩ
-6V 50ns
E t rr PULSE GENERATOR (R OUT =50Ω)
2001. 12. 13
Revision No : 3
50Ω
2/2
