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SEMICONDUCTOR
TECHNICAL DATA
KDS121E
SILICON EPITAXIAL PLANAR DIODE
ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES °§ Small Package °§ Low Forward Voltage °§ Fast Reverse Recovery Time °§ Small Total Capacitance
: ESM. : VF=0.9V (Typ.). : trr=1.6ns(Typ.).
A G H
2 1
E B
D 3
DIM A B
C D E G H J
: CT=0.9pF (Typ.).
MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10
0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + 0.05
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VRM VR IFM IO IFSM PD Tj Tstg
RATING 85 80 300 * 100 * 2* 100 150 -55°≠150
UNIT V V mA mA A mW °… °…
1. ANODE 1 2. ANODE 2 3. CATHODE
2 1 3
C
MAXIMUM RATING (Ta=25°… )
J
ESM
Note : * Unit Rating. Total Rating=Unit Rating x 1.5
Marking
B3
ELECTRICAL CHARACTERISTICS (Ta=25°… )
CHARACTERISTIC SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance Reverse Recovery Time IR CT trr TEST CONDITION IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA MIN. TYP. 0.60 0.72 0.90 0.9 1.6 MAX. 1.20 0.5 3.0 4.0 •ÏA pF nS V UNIT
2002. 6. 3
Revision No : 3
1/1
