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NEC
NEC

K3918 Datasheet

Search -----> 2SK3918


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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3918
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3918 is N-channel MOS FET device that
www.DataSheet4U.cfoematures a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3918
2SK3918-ZK
TO-251 (MP-3)
TO-252 (MP-3ZK)
FEATURES
Low on-state resistance
RDS(on)1 = 7.5 mMAX. (VGS = 10 V, ID = 24 A)
Low Ciss: Ciss = 1300 pF TYP.
5 V drive available
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±48
±192
Total Power Dissipation (TC = 25°C)
PT1 29
Total Power Dissipation
PT2 1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg 55 to +150
IAS 22
EAS 48
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17077EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2004
Page 1

2SK3918
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 25 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)1
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 12 A
VGS = 10 V, ID = 24 A
RDS(on)2 VGS = 5.0 V, ID = 12 A
Input Capacitance
Output Capacitance
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Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Ciss
Coss
Crss
td(on)
tr
td(off)
VDS = 10 V
VGS = 0 V
f = 1 MHz
VDD = 12.5 V, ID = 24 A
VGS = 10 V
RG = 10
Fall Time
tf
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
QG
QGS
QGD
VF(S-D)
VDD = 20 V
VGS = 10 V
ID = 48 A
IF = 48 A, VGS = 0 V
Reverse Recovery Time
trr IF = 48 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 100 A/µs
Note Pulsed
MIN.
2.0
6
TYP.
2.5
12
5.9
11
1300
310
220
13
14
38
14
28
5
10
0.98
27
15
MAX.
10
±100
3.0
7.5
22.2
UNIT
µA
nA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG. RG
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D17077EJ3V0DS
Page 2

2SK3918
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
www.DataSheet4U.com 20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
35
30
25
20
15
10
5
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse)
100
ID(DC)
PW = 100 µs
10 RDS(on) Limited
(at VGS = 10 V)
1 ms
1 Power Dissipation Limited
TC = 25°C
Single pulse
0.1
0.1
1
10
10 ms
100
VDS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/W
10 Rth(ch-C) = 4.31°C/W
1
0.1
0.01
100 µ
1m
10 m
100 m
1
PW - Pulse Width - s
10
Single pulse
100 1000
Data Sheet D17077EJ3V0DS
3
Page 3

2SK3918
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
VGS = 10 V
150
100
50 5.0 V
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Pulsed
0
0123
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4
VDS = 10 V
ID = 1 mA
3
2
1
0
-100
-50 0 50 100 150
Tch - Channel Temperature - °C
200
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
20
Pulsed
15
VGS = 5.0 V
10
10 V
5
0
1 10 100 1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100 Tch = 55°C
25°C
10 75°C
125°C
150°C
1
0.1
0.01
0
VDS = 10 V
Pulsed
12345
VGS - Gate to Source Voltage - V
6
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = 55°C
25°C
75°C
125°C
10 150°C
1
0.1
0.1
VDS = 10 V
Pulsed
1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
15
Pulsed
10
ID = 24 A
5
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
4 Data Sheet D17077EJ3V0DS
Page 4
Part Number K3918
Manufactur NEC
Description Search -----> 2SK3918
Total Page 8 Pages
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