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Toshiba Semiconductor
Toshiba Semiconductor

K3757 Datasheet

Search -----> 2SK3757


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2SK3757
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3757
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.)
High forward transfer admittance: |Yfs| = 1.0 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 450 V)
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAR
IAR
EAR
Tch
Tstg
450
450
±30
2
5
30
103
2
3
150
55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
4.17 °C/W
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C during
use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 42.8 mH, RG = 25 Ω, IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with caution.
1
2
3
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Electrical Characteristics (Ta = 25°C)
2SK3757
Characteristic
Gate leakage current
Gate -source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 450 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 1 A
VDS = 10 V, ID = 1 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
⎯ ⎯ ±10 μA
±30
V
⎯ ⎯ 100 μA
450
V
2.0 4.0 V
1.9 2.45 Ω
0.28 1.0
S
330
4 pF
45
tr VG1S0 V
0V
ton
ID = 1 A
15
VOUT
25
RL = 200 Ω
ns
tf 20
VDD ∼− 200 V
toff Duty <= 1%, tw = 10 μs
80
Qg
Qgs VDD ∼− 360 V, VGS = 10 V, ID = 2 A
Qgd
9
5 nC
4
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 2 A, VGS = 0 V
IDR = 2 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯⎯ 2 A
⎯⎯ 5 A
⎯ ⎯ −1.5 V
1000
ns
5.0 ⎯ μC
Marking
K3757
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2
COMMON
SOURCE
T= 25℃
PULSE TEST
1.6
10
1.2
0.8
0.4
ID – VDS
8.0
6.0
5.75
5.5
5.25
5.0
VGS = 4.5V
0
0 2 4 6 8 10
DRAINSOURCE VOLTAGE VDS (V)
2SK3757
5
10
4
3
ID – VDS
8.0
7.25
COMMON
SOURCE
T= 25℃
7.0 PULSE TEST
6.75
6.5
6.0
2
5.5
1
VGS = 5.0V
0
0 10 20 30 40 50
DRAINSOURCE VOLTAGE VDS (V)
5
COMMON SOURCE
VDS = 20V
PULSE TEST
4
ID – VGS
3
2
100
25
1
T= -55℃
0
0 2 4 6 8 10
GATESOURCE VOLTAGE VGS (V)
10
8
6
4
2
0
0
VDS – VGS
COMMON SOURCE
T= 25℃
PULSE TEST
I= 2.0A
1.0
0.5
4 8 12 16
GATESOURCE VOLTAGE VGS (V)
20
10.0
COMMON SOURCE
VDS = 20V
PULSE TEST
1.0
Yfs– ID
T= -55℃
25
100
0.1
0.1
1
DRAIN CURRENT ID (A)
RDS (ON) – ID
30
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
5
3
VGS = 10, 15 V
1
0.5
0.1
0.3 0.5
1
35
10
10
DRAIN CURRENT ID (A)
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RDS (ON) – Tc
10
COMMON SOURCE
VGS = 10 V
PULSE TEST
8
6
1.0
ID = 2 A
4 0.5
2
0
80 40 0 40 80 120
CASE TEMPERATURE Tc (°C)
160
2SK3757
IDR – VDS
10
COMMON SOURCE
Tc = 25°C
3 PULSE TEST
1
0.3
0.1
0.03
10
3
1 VGS = 0, 1 V
0.01
0
0.2
0.4
0.6
0.8
DRAINSOURCE VOLTAGE VDS (V)
1.0
CAPACITANCE – VDS
1000
Ciss
100
Coss
10
COMMON SOURCE
VGS = 0V
f = 1MHz
Tc = 25℃
Crss
1
0.1 1 10 100
DRAINSOURCE VOLTAGE VDS (V)
Vth – Tc
5 COMMON SOURCE
VDS = 10 V
ID = 1 mA
4 PULSE TEST
3
2
1
0
80 40
0
40 80 120 160
CASE TEMPERATURE Tc (°C)
PD – Tc
50
40
30
20
10
0
0 40 80 120 160 200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
500
400
VDS
COMMON SOURCE
ID = 2 A
Tc = 25°C
PULSE TEST
20
16
180
300 12
90
200
VDS = 360 V
8
100 VGS
4
00
0 2 4 6 8 10 12 14
TOTAL GATE CHARGE Qg (nC)
4 2006-11-06
Page 4
Part Number K3757
Manufactur Toshiba Semiconductor
Description Search -----> 2SK3757
Total Page 6 Pages
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