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Toshiba Semiconductor
Toshiba Semiconductor

K3667 Datasheet

Search -----> 2SK3667


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2SK3667
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3667
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.)
High forward transfer admittance: |Yfs| = 5.5S (typ.)
Low leakage current: IDSS = 100μA (VDS = 600 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
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Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
600
±30
7.5
30
45
189
7.5
4.5
150
-55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.78
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°C, L = 5.88 mH, IAR = 7.5 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
3
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2SK3667
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
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Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
tr
ton
VGS = ±25 V, VDS = 0 V
IG 10 µA, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 4 A
VDS = 10 V, ID = 4 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
10 V
VGS
0V
50
ID = 4 A VOUT
RL = 50
±30
600
2.0
1.5
tf
VDD ∼− 200 V
toff Duty <= 1%, tw = 10 µs
Qg
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 7.5 A
Qgd
Typ. Max
0.75
5.5
1300
12
120
±10
100
4.0
1.0
20
50
35
150
33
18
15
Unit
µA
V
µA
V
V
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 7.5 A, VGS = 0 V
IDR = 7.5 A, VGS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
⎯ ⎯ 7.5 A
⎯ ⎯ 30 A
⎯ −1.7
V
1200
ns
12 ⎯ µC
Marking
K3667
Part No. (or abbreviation code)
Lot No.
(weekly code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-08
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ID – VDS
10
10,8 6
COMMON SOURCE
Tc = 25°C
8 5.5 PULSE TEST
5.25
6
5
4
4.75
2 4.5
VGS = 4V
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
2SK3667
ID – VDS
20
10 COMMON SOURCE
8 Tc = 25°C
PULSE TEST
16
6
12
5.5
8
5.25
5
4 4.75
4.5
VGS = 4 V
0
0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
ID – VGS
20
COMMON SOURCE
16 VDS = 20 V
PULSE TEST
12
8
Tc = −55°C
100
4
25
0
0 246 8
GATE-SOURCE VOLTAGE VGS
10
(V)
VDS – VGS
10
8
ID = 10 A
6 COMMON SOURCE
Tc = 25
PULSE TEST
4
5
2
2.5
0
0 4 8 12
GATE-SOURCE VOLTAGE
16
VGS
20
(V)
Yfs– ID
100
10
1
0.1
0.1
Tc = −55°C
25
100
COMMON SOURCE
VDS = 20 V
PULSE TEST
1 10 100
DRAIN CURRENT ID (A)
RDS (ON) – ID
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
1
VGS = 10 V15V
0.1
0.1
1 10
DRAIN CURRENT ID (A)
100
3 2006-11-08
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RDS (ON) – Tc
4
COMMON SOURCE
VGS = 10 V
PULSE TEST
3
2 ID = 7.5A
4
12
0
80 40
0
40 80 120 160
CASE TEMPERATURE Tc (°C)
2SK3667
IDR – VDS
100
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
1
10
5
31
VGS = 0, 1 V
0.1
0
0.2 0.4 0.6 0.8
−1.0 −1.2
DRAIN-SOURCE VOLTAGE VDS (V)
10000
1000
100
CAPACITANCE – VDS
Ciss
Coss
10 COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1 1
Crss
10 100
DRAIN-SOURCE VOLTAGE VDS (V)
Vth – Tc
5
4
3
2
COMMON SOURCE
1 VDS = 10 V
ID = 1 mA
PULSE TEST
0
80 40
0
40
80 120
CASE TEMPERATURE Tc (°C)
160
PD – Tc
60
40
20
0
0 40 80 120 160 200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500 20
400
300
200
100
0
0
VDS
VDD = 100 V
200
16
12
400 8
VGS
COMMON SOURCE
ID = 7.5 A
Tc = 25°C
4
PULSE TEST
0
10 20 30 40 50
TOTAL GATE CHARGE Qg (nC)
4 2006-11-08
Page 4
Part Number K3667
Manufactur Toshiba Semiconductor
Description Search -----> 2SK3667
Total Page 6 Pages
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