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www.DataSheet4U.com co Super FAP-G .Series 4U Features et High speed switching he Low on-resistance No secondary breadown aS Low driving power at Avalanche-proof .D w wApplications w Switching regulators Power Supply) UPS (Uninterruptible DC-DC converters (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C 2SK3518-01MR m FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Maximum ratings and characteristicAbsolute maximum ratings Ratings 500 ±6 ±24 ±30 6 115 20 5 2.16 32 Operating and storage Tch +150 -55 to +150 temperature range Tstg Isolation Voltage VISO *5 2 *1 L=5.90mH, Vcc=50V, See to Avalanche Energy Graph *2 Tch <150°C = *3 IF < -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C = = = Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Electrical characteristics (Tc =25°C unless otherwise specified) Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton w w w .D IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Symbol V(BR)DSS VGS(th) t a *4 VDS < 500V = S a e h Unit V A A V A mJ kV/µs kV/µs W .c U t4 e Gate(G) m o Drain(D) Source(S) Equivalent circuit schematic °C °C kVrms *5 t=60sec, f=60Hz Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS=500V VGS=0V Tch=125°C VDS=400V VGS=0V VGS=±30V VDS=0V ID=3A VGS=10V ID=3A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=3A VGS=10V RGS=10 Ω V CC=250V ID=6A VGS=10V L=5.9mH Tch=25°C IF=6A VGS=0V Tch=25°C IF=6A VGS=0V -di/dt=100A/µs Tch=25°C Min. 500 3.0 Typ. Max. 5.0 25 250 100 1.50 675 90 4.5 15 7.5 30 7.5 22.5 10.5 4.5 Units V V µA nA Ω S pF 2.5 Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge 10 1.15 5 430 60 2.5 10 5 20 5 15 6.5 2.5 1.00 0.5 1.7 6 Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient w w w .D a aS t ee h 4U t 1.50 om .c ns nC A V µs µC Min. Typ. Max. 3.91 58.0 Units °C/W °C/W 1 www.DataSheet4U.com 2SK3518-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET Typical Output Characteristics 10 9 ID=f(VDS):80µs Pulse test,Tch=25°C 20V 10V 7.0V 50 40 8 6.5V 7 30 6 PD [W] ID [A] 5 6.0V 4 3 20 10 2 1 VGS=5.5V 0 0 25 50 75 100 125 150 0 0 2 4 6 8 10 12 14 16 18 20 22 Tc [°C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 10 100 Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 1 10 ID[A] gfs [S] 0.1 1 0.01 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0.1 0.01 0.1 1 10 VGS[V] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs Pulse test, Tch=25°C 4 4.0 3.5 3 VGS=5.5V 6.0V 6.5V 3.0 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3A,VGS=10V RDS(on) [ Ω ] RDS(on) [ Ω ] 7.0V 10V 2 20V 2.5 max. 2.0 typ. 1.5 1.0 0.5 1 0 0 2 4 6 8 10 0.0 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [°C] 2 www.DataSheet4U.com 2SK3518-01MR FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA 7.0 6.5 6.0 5.5 5.0 max. 16 14 12 20 18 Typical Gate Charge Characteristics VGS=f(Qg):ID=3A, Tch=25°C VGS(th) [V] 4.5 VGS [V] 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. 10 8 6 4 2 0 0 5 10 Vcc= 100V 250V 400V 15 20 25 Tch [°C] Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10n Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C 100 1n Ciss 10 C [F] 100p Coss IF [A] 1 Crss 0.1 0.00 10p 1p 10 -1 10 0 10 1 10 2 10 3 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V, VGS=10V, RG=10Ω 500 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=50V 10 2 400 tf td(off) IAS=2.4A 300 10 1 td(on) EAS [mJ] t [ns] 200 IAS=3.6A tr IAS=6A 100 10 0 0 10 -1 10 0 10 1 10 2 0 25 50 75 100 125 150 ID [A] starting Tch [°C] 3 www.DataSheet4U.com 2SK3518-01MR FUJI POWER MOSFET 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=50V Avalanche Current I AV [A] 10 1 Single Pulse 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] http://www.fujielectric.co.jp/denshi/scd/ 4