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K3114 Datasheet

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3114
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3114 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3114
Isolated TO-220
FEATURES
Low on-state resistance:
RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 2.0 A)
Low gate charge:
QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A)
Gate voltage rating: ±30 V
Avalanche capability ratings
Isolated TO-220 package
5 (Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30 V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±4.0
±16
A
A
Total Power Dissipation (TC = 25°C) PT1 30 W
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Total Power Dissipation (TA = 25°C) PT2 2.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
–55 to +150
°C
IAS 4.0 A
EAS 10.7 mJ
Notes 1. PW 10 µs, Duty cycle 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13337EJ2V0DS00 (2nd edition)
Date Published January 2001 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1998
Page 1

2SK3114
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
VDS = 600 V, VGS = 0 V
VGS = ±30 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 2.0 A
VGS = 10 V, ID = 2.0 A
VDS = 10 V
VGS = 0 V
f = 1 MHz
VDD = 150 V, ID = 2.0 A
VGS(on) = 10 V
RG = 10
RL = 10
VDD = 450 V
VGS = 10 V
ID = 4.0 A
IF = 4.0 A, VGS = 0 V
IF = 4.0 A, VGS = 0 V
di/dt = 50 A/µs
MIN. TYP. MAX.
100
±10
2.5 3.5
1.0 50
1.6 2.2
550
115
13
12
6
35
12
15
4
4.4
0.9
1.3
4.3
Unit
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
µs
µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
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ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL VGS
VGS
Wave Form
10%
0
VGS(on) 90%
VDD
ID 90%
ID 0 10%
Wave Form
ID
90%
10%
td(on) tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D13337EJ2V0DS
Page 2

2SK3114
TYPICAL CHARACTERISTICS (TA = 25°C )
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
40
30
20
10
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
ID(pulse)
10 RD(on) LimiteIDd(DC)
PW
100
= 10 ms
ms
1
TC = 25˚C
Power
Dissipation
1
1001m0ms3ms s
Limited
ms
Single Pulse
0.1
1 10 100
1 000
VDS - Drain to Source Voltage - V
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100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(CH-A) = 62.5 ˚C/W
10 Rth(CH-C) = 4.17 ˚C/W
1
0.1
0.01
10m
100m
1m
10m
100m
1
PW - Pulse Width - s
Single Pulse
10 100 1 000
Data Sheet D13337EJ2V0DS
3
Page 3

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
8 V Pulsed
10 VGS = 10 V
6V
5
0 10 20 30 40
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
5.0
VDS = 10 V
ID = 1 mA
4.0
3.0
2.0
1.0
0
-50 0 50 100 150
Tch - Channel Temperature - ˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
3.0
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Pulsed
ID = 4.0 A
2.0 2.0 A
1.0
0
0 5 10 15
VGS - Gate to Source Voltage - V
2SK3114
FORWARD TRANSFER CHARACTERISTICS
100
Tch = 125 ˚C
75 ˚C
10
VDS = 10V
Pulsed
1.0
25 ˚C
-25 ˚C
0.1
0 5 10 15
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
Tch = -25 ˚C
25 ˚C
75 ˚C
125 ˚C
1.0
VDS = 10 V
Pulsed
0.1
0.1
1.0
ID - Drain Current - A
10
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
3.0 Pulsed
VGS = 10 V
VGS = 20 V
2.0
1.0
0 1.0
10 100
ID - Drain Current - A
4 Data Sheet D13337EJ2V0DS
Page 4
Part Number K3114
Manufactur NEC
Description Search -----> 2SK3114
Total Page 8 Pages
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