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K3053 Datasheet

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3053
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3053 is N-Channel MOS Field Effect Transistor
designed for high current switching applications in consumer
instruments.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3053
Isolated TO-220
FEATURES
Low On-State Resistance
RDS(on)1 = 45 mMAX. (VGS = 10 V, ID = 13 A)
RDS(on)2 = 70 mMAX. (VGS = 4.0 V, ID = 13 A)
Low Ciss : Ciss = 790 pF TYP.
Built-in Gate Protection Diode
Isolated TO-220 package
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS(AC)
Gate to Source Voltage
VGSS(DC)
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
+20, 10
±25
±75
30
2.0
150
–55 to +150
12.5
15.6
V
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 µs, Duty cycle 1 %
! 2. Starting Tch = 25 °C, VDD = 30 V, RG = 25 Ω, VGS = 20 V 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D12912EJ3V0DS00 (3rd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark ! shows major revised points.
©
1999, 2000
Page 1

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2SK3053
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 13 A
RDS(on)2 VGS = 4.0 V, ID = 13 A
Gate to Source Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 13 A
Drain Leakage Current
IDSS VDS = 60 V, VGS = 0 V
Gate to Source Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
! Rise Time
td(on)
tr
ID = 13 A
VGS = 10 V
Turn-off Delay Time
td(off)
VDD = 30 V
Fall Time
tf RG = 10
Total Gate Charge
QG ID = 25 A
Gate to Source Charge
! Gate to Drain Charge
QGS
QGD
VDD = 48 V
VGS = 10 V
Body Diode Forward Voltage
VF(S-D) IF = 25 A, VGS = 0 V
Reverse Recovery Time
trr IF = 25 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 100 A/µs
MIN. TYP. MAX. UNIT
28 45 m
46 70 m
1.0 1.6 2.0 V
8.0 16
S
10 µA
±10 µA
790 pF
240 pF
100 pF
20 ns
200 ns
65 ns
95 ns
20 nC
3.0 nC
6.5 nC
1.0 V
40 ns
45 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY !
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1 %
RL VGS
VGS
Wave Form
010 %
90 %
VDD
ID 90 %
ID 0 10 %
Wave Form
ID
90 %
10 %
td(on) tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D12912EJ3V0DS
Page 2

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TYPICAL CHARACTERISTICS (TA = 25 °C )
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C
2SK3053
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
! FORWARD BIAS SAFE OPERATING AREA
1000
100
10
1
R(DaSt(oVn)GLSim= i1te0IdDV(D)C)
ID(pulse)
PW = 10 µs
100 ms
100 µs
1 ms
Power
Dissipation
10 ms
Limited
TC = 25˚C
Single Pulse
0.1
0.1
1
10 100
VDS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 62.5 ˚C/W
10
Rth(ch-C) = 4.17 ˚C/W
1
0.1
0.01
10µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
10 100 1000
Data Sheet D12912EJ3V0DS
3
Page 3
Part Number K3053
Manufactur NEC
Description Search -----> 2SK3053
Total Page 8 Pages
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