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Toshiba Semiconductor
Toshiba Semiconductor

K2611 Datasheet

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2SK2611
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2611
DCDC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
z Low drainsource ON resistance : RDS (ON) = 1.1 (typ.)
z High forward transfer admittance : |Yfs| = 7.0 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 720 V)
z Enhancementmode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
900
900
±30
9
27
150
663
9
15
150
55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
0.833
50
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 15 mH, RG = 25 , IAR = 9 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2006-11-10
Page 1

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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 720 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 4 A
VDS = 15 V, ID = 4 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
tr
2SK2611
Min Typ. Max Unit
— — ±10
±30 —
— — 100
900 —
2.0 — 4.0
— 1.1 1.4
3.0 7.0
— 2040 —
— 45 —
— 190 —
μA
V
μA
V
V
S
pF
— 25 —
Switching time
Turnon time
Fall time
ton
tf
— 60 —
ns
— 20 —
Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) Charge
toff
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 9 A
Qgd
— 95 —
— 58 —
— 32 — nC
— 26 —
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
Min
——
IDR = 9 A, VGS = 0 V
IDR = 9 A, VGS = 0 V, dIDR / dt = 100 A / μs
Typ. Max
—9
— 27
1.9
1.6 —
20 —
Unit
A
A
V
μs
μC
Marking
TOSHIBA
K2611
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-10
Page 2

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2SK2611
3 2006-11-10
Page 3
Part Number K2611
Manufactur Toshiba Semiconductor
Description Search -----> 2SK2611
Total Page 6 Pages
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