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TK15H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) TK15H50C ○ Switching Regulator Applications • • • • Low drain−source ON resistance Low leakage current Enhancement mode : RDS (ON) = 0. 33 Ω (typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ.) : IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, I45D = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 15 60 150 765 15 15 150 −55~150 Unit V V V A A W mJ A mJ °C °C Pulse (Note 1) 1: GATE 2: DRAIN (HEAT SINK) 3: SOURCE JEDEC JEITA TOSHIBA Weight: 3.8 g (typ.) ― ― Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) www.DataSheet4U.com Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 0.833 50 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.78 mH, RG = 25 Ω, IAR = 15 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 1 2006-11-06 TK15H50C Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Gate−source breakdown voltage Drain cutoff current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD ≈ 400 V, VGS = 10 V, ID = 15 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 µA, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 7.0 A VDS = 10 V, ID = 7.0 A Min — ±30 — 500 2.0 — 4.0 — — — — Typ. — — — — — 0.33 8.5 2450 15 220 50 Max ±10 — 100 — 4.0 0.4 — — — — — pF Unit µA V µA V V Ω S Turn-on time Switching time Fall time — 90 — ns — 45 — Turn-off time Total gate charge (gate−source plus gate−drain) Gate−source charge www.DataSheet4U.com — — — — 175 48 26 22 — — — — nC Gate−drain (“Miller”) charge Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition — — IDR = 15 A, VGS = 0 V IDR = 15 A, VGS = 0 V dIDR / dt = 100 A / µs Min — — — — — Typ. — — — 1050 13 Max 15 60 −1.7 — — Unit A A V ns µC Marking TOSHIBA TK15H50C Part No. (or abbreviation code) Lot No. A line indicates a lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-06 TK15H50C ID – VDS 10 Common source Tc = 25°C Pulse test 10 8 6 20 10 ID – VDS Common source Tc = 25°C Pulse test Drain current ID (A) 6 5.25 4 5 2 4.75 4.5 VGS = 4 V 0 0 1 2 3 4 5 Drain current ID (A) 8 16 12 6 5.75 8 5.5 5.25 4 5 4.75 4.5 0 0 10 20 30 VGS = 4 V 40 50 Drain−source voltage VDS (V) Drain−source voltage VDS (V) ID – VGS 50 Common source VDS = 20 V Pulse test 10 Tc = −55°C VDS – VGS Common source Tc = 25°C Pulse test Drain current ID (A) 40 (V) 8 25 VDS Drain−source voltage 6 15 4 8 2 ID = 4 A 0 0 30 100 20 www.DataSheet4U.com 10 0 0 2 4 6 8 10 4 8 12 16 20 Gate−source voltage VGS (V) Gate−source voltage VGS (V) ⎪Yfs⎪ − ID (S) 100 1 Common source VDS = 20 V Pulse test Common source Tc = 25°C Pulse test RDS (ON) − ID Forward transfer admittance ⎪Yfs⎪ Tc = −55°C 25 10 100 Drain−source ON resistance RDS (ON) (Ω) VGS = 10 V 15 1 1 10 100 0.1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 3 2006-11-06 TK15H50C RDS (ON) – Tc 1.0 IDR − VDS 100 Common source Tc = 25°C Pulse test 0.8 Drain reverse current IDR (A) Drain−source ON resistance RDS (ON) (Ω) Common source VGS = 10 V Pulse test 10 0.6 ID = 15 A 0.4 8 4 0.2 1 10 5 3 1 VGS = 0, −1 V −0.6 −0.8 −1.0 −1.2 0 −80 −40 0 40 80 120 160 0.1 0 −0.2 −0.4 Case temperature Tc (°C) Drain−source voltage VDS (V) Capacitance – VDS 10000 5 Ciss Vth − Tc Gate threshold voltage Vth (V) (pF) 4 1000 Capacitance C 3 Coss www.DataSheet4U.com 2 100 Common source VGS = 0 V f = 1 MHz Tc = 25°C 10 0.1 1 10 1 Crss 100 0 −80 Common source VDS = 10 V ID = 1 mA Pulse test −40 0 40 80 120 160 Drain−source voltage VDS (V) Case temperature Tc (°C) PD − Tc 200 500 Dynamic input/output characteristics VDS (V) Common source ID = 15 A Tc = 25°C Pulse test VDS 20 PD 150 400 400 16 Drain−source voltage Drain power dissipation 300 VDS = 100 V 200 400 12 100 200 200 8 50 100 VGS VDS = 100 V 4 0 0 0 40 80 120 160 200 0 20 40 60 80 0 100 Case temperature Tc (°C) Total gate charge Qg (nC) 4 2006-11-06 Gate−source voltage VGS (V) (W) TK15H50C rth − tw 10 Normalized transient thermal impedance 1 rth (t)/Rth (ch-c) Duty = 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 10μ 0.01 100μ 1m 10m 100m PDM t T Duty = t/T Rth (ch-c) = 0.833°C/W 1 10 Pulse width tw (s) SAFE OPERATING AREA 1000 1000 EAS – Tch 100 ID max (pulse) * ID max (continuous) 100 µs * EAS (mJ) Avalanche energy 1000 800 ID (A) 10 www.DataSheet4U.com Drain current DC OPERATION Tc = 25°C 1 ms * 600 1 400 * Single pulse Ta = 25℃ 0.1 Curves must be derated linearly with increase in temperature. 1 10 200 VDSS max 0 25 0.01 100 50 75 100 125 150 Drain-source voltage VDS (V) Channel temperature (initial) Tch (°C) 15 V −15 V BVDSS IAR VDD Test circuit Waveform Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B 2 − VDD ⎟ ⎝ VDSS ⎠ VDS RG = 25 Ω VDD = 90 V, L = 5.78 mH 5 2006-11-06 TK15H50C www.DataSheet4U.com 6 2006-11-06