High power COMMON BASE bipolar transistor

www.DataSheet4U.com JTDA 50 50 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The JTDA 50 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55AT, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVces Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 220 Watts 55 Volts 3.5 Volts 7.0 Amps - 65 to + 200 oC + 200 oC SEE NOTE BELOW ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pin Pg ηc VSWR BVebo BVces Cob hFE CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance Emitter to Base Breakdown Collector to Emitter Breakdown Capacitance Collector to Base DC - Current Gain Thermal Resistance TEST CONDITIONS F = 960-1215 MHz Vcc = 36 Volts PW = 10 µsec DF = 20% F = 1090 MHz Ie = 25 mA Ic = 25 mA Vcb = 36V Ic = 750 mA, Vce = 5 V MIN 50 10 7.0 40 10:1 3.5 55 20 100 0.8 Volts Volts TYP MAX UNITS Watts Watts dB % θjc 2 o C/W Note 1: At rated output power and pulse conditions 2: At rated pulse conditions Case Outline Note: During 1995 Ghz will be converting the 55AT style flange to the version using a slot in the mounting area, refer to 55AW. Issue June, 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120