(J270 / J271) P-Channel JFETs

J/SST270 Series Vishay Siliconix P-Channel JFETs J270 J271 PRODUCT SUMMARY Part Number J/SST270 J/SST271 SST270 SST271 VGS(off) (V) 0.5 to 2.0 1.5 to 4.5 V(BR)GSS Min (V) 30 30 gfs Min (mS) 6 8 IDSS Min (mA) –2 –6 FEATURES D D D D Low Cutoff Voltage: J270 <2 V High Input Impedance Very Low Noise High Gain BENEFITS D Full Performance from Low-Voltage Power Supply: Down to 2 V D Low Signal Loss/System Error D High System Sensitivity D High-Quality, Low-Level Signal Amplification APPLICATIONS D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery Amplifiers D Ultrahigh Input Impedance Pre-Amplifiers D High-Side Switching DESCRIPTION The J/SST270 series consists of all-purpose amplifiers for designs requiring p-channel operation. The TO-226AA (TO-92) plastic package provides a low-cost option, while the TO-236 (SOT-23) package provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). TO-226AA (TO-92) D 1 D G 2 S S 3 2 1 TO-236 (SOT-23) 3 G Top View Top View J270 J271 SST270 (S0)* SST271 (S1)* *Marking Code for TO-236 ABSOLUTE MAXIMUM RATINGS Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Document Number: 70258 S-04233—Rev. D, 02-Jul-01 Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C www.vishay.com 8-1 J/SST270 Series Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits J/SST270 J/SST271 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Drain Cutoff Current Gate-Source Forward Voltage Symbol Test Conditions Typa Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID(off) VGS(F) IG = 1 mA , VDS = 0 V VDS = –15 V, ID = –1 nA VDS = –15 V, VGS = 0 V VGS = 20 V, VDS = 0 V TA = 125_C VDG = –15 V, ID = –1 mA VDS = –15 V, VGS = 10 V IG = –1 mA , VDS = 0 V 45 30 0.5 –2 2.0 –15 200 30 1.5 –6 4.5 –50 200 V mA pA nA pA V 10 5 10 –10 –0.7 Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos Ciss Crss en VDS = –15 V, VGS = 0 V f = 1 MHz VDG = –10 V, VGS = 0 V f = 1 kHz VDS = –15 V, VGS = 0 V f = 1 kHz 20 4 20 pF 6 15 200 8 18 500 mS mS nV⁄ √Hz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. PSCIA TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage 200 rDS(on) – Drain-Source On-Resistance ( Ω ) IDSS 160 rDS 120 –60 –80 gfs – Forward Transconductance (mS) IDSS – Saturation Drain Current (mA) gos – Output Conductance (µS) 15 gfs 12 gos 150 200 –100 Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 18 250 80 –40 9 100 40 rDS @ ID = –1 mA, VGS = 0 V IDSS @ VDS = –15 V, VGS = 0 V 0 0 2 4 6 8 10 VGS(off) – Gate-Source Cutoff Voltage (V) –20 6 gfs and gos @ VDS = –15 V VGS = 0 V, f = 1 kHz 3 0 2 4 6 8 VGS(off) – Gate-Source Cutoff Voltage (V) 50 0 0 10 www.vishay.com 8-2 Document Number: 70258 S-04233—Rev. D, 02-Jul-01 J/SST270 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics –2 VGS = 0 V –1.6 I D – Drain Current (mA) 0.2 V 0.4 V 0.6 V –1.2 I D – Drain Current (mA) –1.6 –2 VGS = 0 V 0.5 V 1.0 V 1.5 V Output Characteristics –1.2 2.0 V –0.8 –0.8 0.8 V –0.4 VGS(off) = 1.5 V 0 0 –0.2 –0.4 –0.6 –0.8 –1 –0.4 VGS(off) = 3 V 0 0 –0.1 –0.2 –0.3 –0.4 –0.5 VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V) Output Characteristics –25 30 VGS(off) = 3 V –20 I D – Drain Current (mA) 0.5 V –15 1.0 V –10 1.5 V –5 2.0 V 0 0 –4 –8 –12 –16 –20 0 0 6 VGS = 0 V 24 Capacitance (pF) Capacitance vs. Gate-Source Voltage VDS = 0 V f = 1 MHz 18 12 Crss Ciss VDS – Drain-Source Voltage (V) 4 8 12 16 20 VGS – Gate-Source Voltage (V) Transfer Characteristics –10 VGS(off) = 1.5 V –8 I D – Drain Current (mA) I D – Drain Current (mA) VDS = –15 V –32 –40 Transfer Characteristics VGS(off) = 3 V VDS = –15 V –6 TA = –55_C 25_C –24 TA = –55_C 25_C –16 –4 125_C –2 –8 125_C 0 0 0.2 0.4 0.6 0.8 1.0 VGS – Gate-Source Voltage (V) 0 0 1 2 3 4 5 VGS – Gate-Source Voltage (V) Document Number: 70258 S-04233—Rev. D, 02-Jul-01 www.vishay.com 8-3 J/SST270 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transconductance vs. Drain Current 100 VGS(off) = 3 V gfs – Forward Transconductance (mS) VDS = –15 V f = kHz gos – Output Conductance (µS) 100 VGS(off) = 3 V Output Conductance vs. Drain Current TA = –55_C 125_C 10 TA = –55_C 10 25_C 25_C 125_C VDS = –15 V f = kHz 1 1 –0.1 –1 ID – Drain Current (mA) –10 –0.1 –1 ID – Drain Current (mA) –10 On-Resistance vs. Temperature 250 rDS(on) – Drain-Source On-Resistance ( Ω ) On-Resistance vs. Drain Current rDS(on) – Drain-Source On-Resistance ( Ω ) TA = 25_C 300 ID = –1 mA rDS changes X 0.7%/_C 240 200 VGS(off) = 1.5 V 180 VGS(off) = 1.5 V 3V 150 3V 100 5V 50 120 5V 60 0 –55 –35 –15 5 25 45 65 85 105 125 0 –1 –10 ID – Drain Current (mA) –100 TA – Temperature (_C) Noise Voltage vs. Frequency 100 100 nA 10 nA Gate Leakage Current ID = –0.1 mA Hz I G – Gate Leakage 1 nA TA = 125_C –1 mA ID = –10 mA en – Noise Voltage nV / –1 mA 10 IGSS @ 125_C 100 pA –10 mA 10 pA TA = 25_C IGSS @ 25_C –1 mA 0.1 pA 1 pA VDS = –10 V 1 10 100 1k f – Frequency (Hz) 10 k 100 k 0 –10 –20 –30 –40 –50 VDG – Drain-Gate Voltage (V) www.vishay.com 8-4 Document Number: 70258 S-04233—Rev. D, 02-Jul-01