Lightspeed 2TM Series

www.DataSheet4U.com HiPerFASTTM IGBT ISOPLUS247TM Lightspeed 2TM Series IXGR 60N60C2 IXGR 60N60C2D1 (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Symbol V CES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 110°C (IXGR60N60C2D1) TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 48 39 300 ICM = 100 250 -55 ... +150 150 -55 ... +150 V V V V A A A A A ISOPLUS247 (IXGR) C E (ISOLATED TAB) G = Gate E = Emitter Features C = Collector W °C °C °C V g °C DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages 50/60 Hz RMS, t = 1m 2500 5 300 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 600 3.0 GR60N60C2 GR60N60C2D1 5.0 50 650 ±100 TJ = 25°C TJ = 125°C 2.3 2.0 2.7 V V µA µA nA V V BV CES VGE(th) ICES IGES VCE(sat) IC IC = 1 mA, VGE = 0 V = 250 µA, VCE = VGE Easy assembly High power density Very fast switching speeds for high frequency applications VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 50 A, VGE = 15 V Note 1 © 2004 IXYS All rights reserved DS99051D(05/04) IXGR 60N60C2 IXGR 60N60C2D1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 40 55 3900 280 320 97 140 IC = 50 A, VGE = 15 V, VCE = 0.5 VCES 28 35 18 25 95 150 35 0.49 Inductive load, TJ = 125°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2.0 Ω 18 25 1.6 130 80 0.92 0.25 0.8 S pF pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ ISOPLUS 247 Outline gfs Cies Coes C res Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJ-DCB RthJC RthCS IC = 50 A; VCE = 10 V, Note 1 VCE = 25 V, VGE = 0 V, f = 1 MHz 60N60C2 60N60C2D1 Inductive load, TJ = 25°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2.0 Ω (Note 2) (Note 3) K/W 0.50 K/W 0.15 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 150°C 2.0 1.39 8.3 35 V A ns 0.85 K/W Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions IF = 60 A, VGE = 0 V, Note 1 IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 2: RthJ-DCB is the thermal resistance junction-to-internal side of DCB substrate 3: RthJC is the thermal resistance junction-to-external side of DCB substrate IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGR 60N60C2 IXGR 60N60C2D1 Fig. 1. Output Characteristics @ 25 Deg. C 1 00 90 80 VG E = 15V 13V 11 V 9V 200 1 75 1 50 Fig. 2. Extended Output Characteristics @ 25 deg. C VG E = 15V 13V 11 V 9V I C - Amperes I C - Amperes 70 60 50 40 30 20 1 0 0 0.5 1 1 .5 2 2.5 7V 1 25 1 00 75 50 7V 5V 25 0 5V 1 1 .5 2 2.5 3 3.5 4 4.5 3 3.5 V CE - Volts V CE - Volts Fig. 3. Output Characteristics @ 125 Deg. C 1 00 90 80 70 VG E = 15V 13V 11 V 9V 1 .1 1 .2 Fig. 4. Temperature Dependence of V CE(sat) VC E (sat) - Normalized VG E = 15V 1 0.9 0.8 0.7 I C = 100A I C - Amperes 7V 60 50 40 30 20 1 0 0 0.5 1 1 .5 2 2.5 3 3.5 I C = 50A 5V I C = 25A 0.6 0.5 25 50 75 1 00 1 25 1 50 V CE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emiiter voltage 5 4.5 4 T J = 25º C 200 1 75 1 50 Fig. 6. Input Admittance VCE - Volts 3.5 3 2.5 2 1 .5 1 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 I C - Amperes 1 25 1 00 75 50 25 0 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 T J = 125º C 25º C -40º C I C = 100A 50A 25A V GE - Volts © 2004 IXYS All rights reserved V GE - Volts IXGR 60N60C2 IXGR 60N60C2D1 Fig. 7. Transconductance 1 00 90 80 T J = -40º C 25º C Fig. 8. Dependence of Eoff on RG 6 5 TJ = 125º C VGE = 15V VCE = 400V I C = 100A E off - milliJoules g f s - Siemens 70 60 50 40 30 20 1 0 0 0 25 125º C 4 I C = 75A 3 2 1 0 I C = 25A 2 4 6 8 1 0 1 2 1 4 1 6 I C = 50A 50 75 1 00 1 25 1 50 1 75 200 I C - Amperes R G - Ohms Fig. 9. Dependence of Eoff on Ic 5 R G = 3 Ω. R G = 10 Ω - - - - 4 5 Fig. 10. Dependence of Eoff on Temperature R G= 3 Ω R G= 10 Ω - - - - 4 VG E = 15V VC E = 400V I C = 75A I C = 100A E off - MilliJoules 3 T J = 125 ºC E off - milliJoules VG E = 15V VC E = 400V 3 2 T J = 25 ºC 1 2 I C = 50A 1 I C = 25A 0 20 30 40 50 60 70 80 90 1 00 0 25 50 75 1 00 1 25 I C - Amperes TJ - Degrees Centigrade Fig. 11. Gate Charge 1 5 VC E = 300V I C = 50A I G = 10mA 1 0000 Fig. 12. Capacitance f = 1M Hz C ies 1 000 C oes 1 2 VG E - Volts 9 6 Capacitance - pF 1 00 C res 3 0 0 20 40 60 80 1 00 1 20 1 40 1 0 0 5 1 0 1 5 20 25 30 35 40 Q G - nanoCoulombs IXYS reserves the right to change limits, test conditions, and dimensions. V CE - Volts IXGR 60N60C2 IXGR 60N60C2D1 Fig. 13. Maxim um Transient Therm al Resistance 0.55 0.5 0.45 R( t h ) J C - ºC / W 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 1 10 Pulse Width - milliseconds 100 1000 © 2004 IXYS All rights reserved IXGR 60N60C2 IXGR 60N60C2D1 160 A 140 IF 120 100 80 60 40 20 0 0 1 VF 2 V 0 100 A/µs 1000 -diF/dt 0 0 200 400 600 A/µs 1000 800 -diF/dt 4000 nC TVJ= 100°C VR = 300V 80 A TVJ= 100°C VR = 300V TVJ= 25°C TVJ=100°C 3000 Qr 2000 IF=120A IF= 60A IF= 30A 60 IRM 40 TVJ=150°C 1000 20 IF=120A IF= 60A IF= 30A Fig. 14. Forward current IF versus VF 2.0 Fig. 15. Reverse recovery charge Qr versus -diF/dt 140 ns 130 Fig. 16. Peak reverse current IRM versus -diF/dt 20 V VFR 15 1.6 µs tfr TVJ= 100°C VR = 300V 1.5 Kf 1.0 trr 120 110 IRM 100 0.5 IF=120A IF= 60A IF= 30A tfr 10 VFR 1.2 0.8 Qr 5 90 80 0 0.4 0.0 TVJ= 100°C IF = 60A 0 200 400 0 40 80 120 °C 160 TVJ 0 200 400 600 -diF/dt 800 A/µs 1000 0.0 600 A/µs 1000 800 diF/dt Fig. 17. Dynamic parameters Qr, IRM versus TVJ 1 K/W 0.1 ZthJC 0.01 Fig. 18. Recovery time trr versus -diF/dt Fig. 19. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.3073 0.3533 0.0887 0.1008 ti (s) 0.0055 0.0092 0.0007 0.0399 0.001 0.0001 0.00001 DSEP 2x61-06A 0.0001 0.001 0.01 0.1 s t 1 Fig. 20. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions.