HiPerFAST IGBT ISOPLUS247

www.DataSheet4U.com Advanced Technical Information HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE(sat) (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.5 V = 75 ns (D1) Symbol VCES VCGR VGES VGEM I C25 I C110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 35 150 ICM = 80 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W °C °C °C °C ISOPLUS 247 E153432 G C E Isolated Backside* G = Gate, E = Emitter C = Collector * Patent pending Features l l l l l DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Symbol Test Conditions Mounting torque (M3) 1.13/10Nm/lb.in. 5 g Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 40N60C 40N60CD1 40N60C 40N60CD1 40N60C 40N60CD1 40N60C 40N60CD1 600 600 2.5 2.5 5.0 5.0 200 650 1 3 ±100 2.5 V V V mA mA mA mA nA V Applications l l Uninterruptible power supplies (UPS) BVCES VGE(th) I CES IC IC IC IC = 250 mA, VGE = 0 V = 750 mA = 250 mA, VCE = VGE = 500 mA Switched-mode and resonant-mode power supplies l AC motor speed control l l DC servo and robot drives DC choppers VCE = 0.8 • VCES TJ = 25°C VGE = 0 V; note 1 TJ = 25°C TJ = 125°C TJ = 125°C Advantages l l l Easy assembly High power density Very fast switching speeds for high frequency applications 98803 (01/01) I GES VCE(sat) VCE = 0 V, VGE = ±20 V IC = IT, VGE = 15 V © 2001 IXYS All rights reserved IXGR 40N60C IXGR 40N60CD1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 30 40 3300 310 370 65 116 IC = IT, VGE = 15 V, VCE = 0.5 VCES 23 55 Inductive load, TJ = 25°C IC = IT, VGE = 15 V VCE = 0.8 • VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IT, VGE = 15 V 25 30 100 75 0.85 25 35 40N60C 0.4 VCE = 0.8 • VCES, RG = Roff = 4.7 W 40N60CD1 1.2 Remarks: Switching times may increase for 150 VCE (Clamp) > 0.8 • VCES, higher TJ or 105 increased RG 1.2 150 150 1.70 S pF pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ mJ ns ns mJ 0.6 K/W 0.15 K/W Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection ISOPLUS 247 OUTLINE gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IT; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % VCE = 25 V, VGE 40N60C = 0 V, f = 1 MHz 40N60CD1 Reverse Diode (FRED) (IXGH40N60CD1 only) Characteristic Values (TJ = 25°C, unless otherwise specified) Symbol Test Conditions min. typ. max. VF IRM t rr RthJC I F = IT, VGE = 0 V, Note 1 I F = IT, VGE = 0 V, VR = 100 V -diF/dt = 100 A/ms TJ = 150°C TJ = 25°C TJ = 100°C 3.5 1.3 1.8 7.5 V V A ns 0.90 K/W I F = 1 A; -di/dt = 100 A/ms; VR = 30 V Note: 1. Pulse test, tp £ 300 ms, duty cycle:d £ 2 % 2. IT = 40A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025