HiPerFAST IGBT

www.DataSheet4U.com HiPerFASTTM IGBT with Diode ISOPLUS247TM (Electrically Isolated Backside) IXGR 32N60CD1 VCES IC25 VCE(SAT) tfi(typ) = 600 V = 45 A = 2.7 V = 55 ns Preliminary data sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL Weight 50/60 Hz, RMS t = 1 min leads-to housing Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ±20 ±30 45 28 120 ICM = 64 @ 0.8 VCES 140 -55 ... +150 150 -55 ... +150 300 2500 5 V V V V A A A A W °C °C °C °C V~ g Features DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 TJ = 25°C TJ = 125°C 5.0 200 3 ±100 2.3 2.7 V µA mA nA V Easy assembly High power density Very fast switching speeds for high frequency applications Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages * Patent pending G = Gate, E = Emitter, C = Collector, TAB = Collector G C ISOPLUS 247TM (IXGR) E 153432 E Isolated backside* VGE(th) ICES IGES VCE(sat) IC = 250 µA, VCE = VGE VCE = 600V VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IT, VGE = 15 V Note 1 © 2004 IXYS All rights reserved DS98631D(06/04) IXGR 32N60CD1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 25 2700 VCE = 25 V, VGE = 0 V, f = 1 MHz 240 50 110 IC = IT, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C ° IC = IT, VGE = 15 V, L = 100 µH, VCE = 0.8 VCES, RG = Roff = 4.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°C ° IC = IT, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = Roff = 4.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 22 40 25 20 85 55 0.32 25 25 1 110 100 0.85 0.15 170 S pF pF pF nC nC nC ns ns ns ns 0.75 mJ ns ns mJ ns ns mJ 0.90 K/W K/W Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection ISOPLUS 247 OUTLINE gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IT; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Reverse Diode (FRED) Symbol VF IRM trr RthJC Note: 1. IT = 32A Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 150°C TJ = 25°C 6 100 25 1.6 2.5 V V A ns ns 1.15 K/W IF = IT, VGE = 0 V, Pulse test t ≤ 300 µs, duty cycle d ≤ 2 % IF = IT, VGE = 0 V, -diF/dt = 100 A/µs VR = 100 V TJ = 100°C IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 IXGR 32N60CD1 100 TJ = 25°C 200 VGE = 15V 13V 11V 9V TJ = 25°C 80 160 VGE = 15V 13V 11V IC - Amperes IC - Amperes 60 40 20 5V 120 9V 80 40 0 7V 5V 7V 0 0 1 2 3 4 5 0 2 4 6 8 10 VCE - Volts VCE - Volts Fig. 1. Output Characteristics 100 TJ = 125°C VGE = 15V 11V 9V Fig. 2. Extended Output Characteristics 1.50 VCE (sat) - Normalized 80 13V VGE = 15V 1.25 IC = 64A IC - Amperes 60 40 20 5V 7V 1.00 IC = 32A IC = 16A 0.75 0 0 1 2 3 4 5 0.50 25 50 75 100 125 150 VCE - Volts TJ - Degrees C Fig. 3. High Temperature Output Characteristics 100 80 Capacitance - pF 10000 Fig. 4. Temperature Dependence of VCE(sat) VCE = 10V Ciss f = 1Mhz IC - Amperes 60 40 TJ = 125°C 1000 Coss 100 Crss 20 TJ = 25°C 0 3 4 5 6 7 8 9 10 10 0 5 10 15 20 25 30 35 40 VGE - Volts VCE-Volts Fig. 5. Admittance Curves Fig. 6. Capacitance Curves © 2004 IXYS All rights reserved IXGR 32N60CD1 1.00 TJ = 125°C 4 RG = 10Ω E(OFF) 4 TJ = 125°C 8 E(ON) - millijoules E(ON) - millijoules 0.75 E(ON) 3 3 E(ON) IC = 64A E(OFF) 6 E(OFF) - milliJoules E(OFF) - millijoules 0.50 2 2 E(ON) IC = 32A IC = 16A E(OFF) 4 0.25 1 1 E(ON) 2 0.00 0 20 40 60 80 0 0 E(OFF) 0 10 20 30 40 50 60 0 IC - Amperes RG - Ohms Fig. 7. Dependence of EON and EOFF on IC. 16 IC = 32A VCE = 300V Fig. 8. Dependence of EON and EOFF on RG. 100 64 12 IC - Amperes VGE - Volts 10 TJ = 125°C RG = 4.7Ω dV/dt < 5V/ns 8 1 4 0 0 25 50 75 100 125 0.1 0 100 200 300 400 500 600 Qg - nanocoulombs VCE - Volts Fig. 9. Gate Charge 1 D=0.5 D=0.2 Fig. 10. Turn-off Safe Operating Area ZthJC (K/W) 0.1 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 0.01 D = Duty Cycle 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds Fig. 11. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXGR 32N60CD1 60 A 50 IF 40 1000 TVJ= 100°C nC VR = 300V IF= 60A IF= 30A IF= 15A 800 Qr TVJ=150°C 30 20 600 T = 100°C A VVJ = 300V R 25 IF= 60A IRM IF= 30A 20 IF= 15A 15 30 TVJ=100°C TVJ=25°C 400 10 200 5 0 10 0 0 1 2 VF 3 V 0 100 A/µs 1000 -diF/dt 0 200 400 600 A/µs 1000 800 -diF/dt Fig. 12. Forward current IF versus VF Fig. 13. Reverse recovery charge Qr versus -diF/dt 90 ns Fig. 14. Peak reverse current IRM versus -diF/dt 20 V VFR 15 2.0 TVJ= 100°C VR = 300V TVJ= 100°C IF = 30A VFR tfr 1.00 tfr 0.75 µs 1.5 Kf 1.0 trr 80 IRM 70 0.5 IF= 60A IF= 30A IF= 15A 10 0.50 Qr 60 5 0.25 0.0 0 40 80 120 °C 160 TVJ 0 200 400 600 -diF/dt 800 A/µs 1000 0 0 200 400 0.00 600 A/µs 1000 800 diF/dt Fig. 15. Dynamic parameters Qr, IRM versus TVJ 10 K/W 1 ZthJC 0.1 Fig. 16. Recovery time trr versus -diF/dt Fig. 17. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.436 0.482 0.117 0.115 ti (s) 0.0055 0.0092 0.0007 0.0418 0.01 0.001 DSEP 2x31-06B 0.0001 0.00001 0.0001 0.001 0.01 0.1 s t 1 Fig. 18. Transient thermal resistance junction to case © 2004 IXYS All rights reserved