(IXGx12N100x) IGBT

Part  Number IXGP12N100A
Manufacturer IXYS Corporation
Semiconductor DataSheet

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www.DataSheet4U.com IGBT VCES IC25 24 A 24 A VCE(sat) 3.5 V 4.0 V IXGA/IXGP12N100 1000 V IXGA/IXGP12N100A 1000 V Preliminary Data Sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 150 W Clamped inductive load, L = 300 mH TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 24 12 48 ICM = 24 @ 0.8 VCES 100 -55 ... +150 150 -55 ... +150 W °C °C °C V V V V A A A A TO-220AB (IXGP) GC E TO-263 (IXGA) G E C (TAB) Features • International standard packages JEDEC TO-220AB and TO-263AA • Second generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Advantages • Easy to mount with one screw • Reduces assembly time and cost • High power density 95591A (3/97) Mounting torque with screw M3 Mounting torque with screw M3.5 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) ICES IC = 3 mA, VGE = 0 V IC = 250 mA, VGE = VGE VCE = 0.8, VCES VGE = 0 V IGES VCE(sat) VCE = 0 V, VGE = ±20 V IC = ICE90, VGE = 15 12N100 12N100A Min. 1000 2.5 TJ = 25°C TJ = 125°C Characteristic Values Typ. Max. V 5.0 250 1 ±100 3.5 4.0 V mA mA nA V V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 1-2 IXGA12N100 IXGA12N100A Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 300 mH 12N100A 12N100 12N100A 12N100 RthJC RthCK 0.25 VCE = 800 V, RG = Roff = 120 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 300 mH 12N100A 12N100 12N100A VCE = 800 V, RG = Roff = 120 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG IC = IC90, VGE = 15 V, VCE = 0.5 VCES 65 8 24 100 200 850 500 800 2.5 100 200 1.1 900 950 1250 4 6 1.25 1000 700 1000 4 90 20 45 nC nC nC ns ns ns ns ns mJ ns ns mJ ns ns ns mJ mJ K/W K/W Characteristic Values Min. Typ. Max. 6 10 S IXGP12N100 IXGP12N100A TO-220 AB (IXGP) Outline Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 TO-263 AA (IXGA) Outline Dim. Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 Min. Recommended Footprint A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2




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