(IXGx12N100xU1) IGBT - Combi Pack

www.DataSheet4U.com IGBT Combi Pack Preliminary Data Sheet VCES IXGA/IXGP12N100U1 IXGA/IXGP12N100AU1 1000 V 1000 V IC25 24 A 24 A VCE(sat) 3.5 V 4.0 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 150 W Clamped inductive load, L = 300 mH TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 24 12 48 ICM = 24 @ 0.8 VCES 100 -55 ... +150 150 -55 ... +150 W °C °C °C V V V V A A A TO-220AB(IXGP) GC E TO-263 AA (IXGA) G A E C (TAB) Mounting torque with screw M3 Mounting torque with screw M3.5 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Features • International standard packages JEDEC TO-220AB and TO-263AA • IGBT with antiparallel FRED in one package • Second generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Advantages • Easy to mount with one screw • Space savings (two devices in one package) • Reduces assembly time and cost • High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) ICES IC = 3 mA, VGE = 0 V IC = 250 mA, VGE = VGE VCE = 0.8, VCES VGE = 0 V IGES VCE(sat) VCE = 0 V, VGE = ±20 V IC = ICE90, VGE = 15 12N100 12N100A Min. 1000 2.5 TJ = 25°C TJ = 125°C Characteristic Values Typ. Max. V 5.5 300 3 ±100 3.5 4.0 V mA mA nA V V IXYS reserves the right to change limits, test conditions, and dimensions. 95592A (3/97) © 2000 IXYS All rights reserved 1-4 IXGA12N100U1 IXGA12N100AU1 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK 0.25 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 300 mH VCE = 800 V, RG = Roff = 120 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 300 mH VCE = 800 V, RG = Roff = 120 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 12N100A 12N100A 12N100 12N100A IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % IC = IC90, VGE = 15 V, VCE = 0.5 VCES Characteristic Values Min. Typ. Max. 6 10 S IXGP12N100U1 IXGP12N100AU1 TO-220 AB (IXGP) Outline 65 8 24 100 200 850 500 90 20 45 nC nC nC ns ns 1000 700 ns ns ns mJ ns ns mJ ns ns ns mJ mJ Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 800 1000 4 6 100 200 1.1 900 950 12N100 1250 12N100A 8 12N100 10 1.25 K/W K/W TO-263 AA (IXGA) Outline Reverse Diode (FRED) (T J = 25°C, unless otherwise specified) Symbol Test Conditions VF IF =8A, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IRM t rr IF IF RthJC = IC90, VGE = 0 V, -diF/dt = 100 A/ms = 1 A, -di/dt = 50 A/ms, VR = 30 V TJ = 25°C 6.5 140 50 60 2.5 A ns ns K/W Characteristic Values Min. Typ. Max. 2.75 V VR = 100 V, TJ = 125°C Dim. A A1 Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 Min. Recommended Footprint b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXGA12N100U1 IXGA12N100AU1 50 40 VGE = 15V TJ = 25°C 13V 11V IXGP12N100U1 IXGP12N100AU1 100 TJ = 25°C VGE = 15V 80 IC - Amperes IC - Amperes 9V 13V 30 20 7V 60 11V 40 9V 10 0 0 2 4 6 8 10 20 7V 0 0 4 8 12 16 20 VCE - Volts VCE - Volts Figure 1. Saturation Voltage Characteristics Figure 2. Extended Output Characteristics 50 TJ = 125°C 1.6 VGE = 15V 13V 11V VGE = 15V IC = 24A VCE (sat) - Normalized 40 1.4 1.2 IC = 12A IC - Amperes 30 9V 20 7V 1.0 0.8 IC = 6A 10 0 0 2 4 6 8 10 0.6 25 50 75 100 125 150 VCE - Volts TJ - Degrees C Figure 3. Saturation Voltage Characteristics Figure 4. Temperature Dependence of VCE(sat) 1000 50 VCE = 10V 40 30 TJ = 125°C Ciss f = 1Mhz Capacitance - pF TJ = 25°C IC - Amperes Coss 100 20 10 0 2 4 6 8 10 12 Crss 10 0 5 10 15 20 25 30 35 40 VGE - Volts VCE-Volts Figure 5. Admittance Curves © 2000 IXYS All rights reserved Figure 6. Capacitance Curves 3-4 IXGA12N100U1 IXGA12N100AU1 1200 TJ = 125°C IXGP12N100U1 IXGP12N100AU1 5 5 RG = 120
1000 t fi - nanoseconds t fi - nanoseconds 1100 t fi 4 800 tfi TJ = 125°C IC = 12A 4 E(OFF) - milliJoules E(OFF) - millijoules 600 3 1000 E(OFF) 3 400 E(OFF) 2 900 2 200 1 800 0 5 10 15 1 20 0 0 30 60 90 120 0 150 IC - Amperes RG - Ohms Figure 7. Dependence of tfi and EOFF on IC. 15 12 Figure 8. Dependence of tfi and EOFF on RG. 100 24 IC = 30A VCE = 150V IC - Amperes TJ = 125°C VGE - Volts 10 9 6 3 0 0 15 30 45 60 75 RG = 4.7
dV/dt < 5V/ns 1 0.1 0 200 400 600 800 1000 Qg - nanocoulombs VCE - Volts Figure 9. Gate Charge 1 D=0.5 D=0.2 D=0.1 Figure 10. Turn-off Safe Operating Area ZthJC (K/W) 0.1 D=0.05 D=0.02 D=0.01 D = Duty Cycle 0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Figure 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-4