(IXGx10N60x) High speed IGBT

www.DataSheet4U.com Preliminary data Low VCE(sat) IGBT High speed IGBT VCES IXGA/IXGP/IXGH10N60 600 V IXGA/IXGP/IXGH10N60A 600 V IC25 20 A 20 A VCE(sat) 2.5 V 3.0 V TO-220AB(IXGP) Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 150 Ω Clamped inductive load, L = 300 µH TC = 25°C Maximum Ratings 600 600 ±20 ±30 20 10 40 ICM = 20 @ 0.8 VCES 100 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W °C °C °C °C Features l International standard packages JEDEC TO-263 AA surface mountable and JEDEC TO-247 AD l 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity Applications l AC motor speed control l DC servo and robot drives l DC choppers l Uninterruptible power supplies (UPS) l Switch-mode and resonant-mode power supplies Advantages Space savings, TO-263 AA l Facilitates automated assembly l Reduces assembly time and cost l Easy to mount with 1 screw, TO-247 (isolated mounting screw hole) l High power density l G C E TO-263 AA (IXGA) G E C (TAB) TO-247 AD (IXGH) G C (TAB) C E C = Collector, TAB = Collector G = Gate, E = Emitter, Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD TO-263 AA TO-247 AD 1.13/10 Nm/lb.in. 2 6 g g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5 200 1 ±100 10N60 10N60A 2.5 3.0 V V µA mA nA V V BVCES VGE(th) ICES I GES VCE(sat) IC IC = 250 µA, VGE = 0 V = 250 µA, VCE = VGE VCE = 0.8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V © 1996 IXYS All rights reserved 91510G (9/96 ) IXGA/ IXGP/ IXGA/ IXGP/ Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4 8 S IXGH10N60 IXGH10N60A TO-220 AB Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK I C = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 750 VCE = 25 V, VGE = 0 V, f = 1 MHz 100 30 50 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C ° IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = Roff = 150 Ω Remarks: Switching times may increase for VCE 10N60A (Clamp) > 0.8 • VCES , higher TJ or increased RG 10N60A ° Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES , RG = Roff = 150 Ω 15 25 100 200 0.4 600 300 0.6 100 200 1 900 570 360 2.0 1.2 1500 2000 600 70 25 45 pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns ns mJ mJ 1.25 K/W 1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 14.93 14.23 16.50 9.66 3.54 5.85 2.29 1.15 2.79 0.64 2.54 4.32 0.64 0.51 2.04 10.66 4.08 6.85 2.79 1.77 6.35 0.89 BSC 4.82 1.39 0.76 2.49 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.139 0.230 0.090 0.045 0.110 0.025 0.100 0.170 0.025 0.020 0.080 0.420 0.161 0.270 0.110 0.070 0.250 0.035 BSC 0.190 0.055 0.030 0.115 TO-263 AA Outline 10N60 Remarks: Switching times 10N60A may increase for V CE (Clamp) > 0.8 • V CES, higher 10N60 10N60A TJ or increased RG 0.25 K/W Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R IXGA/P/IXGH 10N60 / 10N60A characteristic curves are located in the IXGH 10N60U1 and IXGH 10N60AU1 data sheet. TO-247 AD Outline Dim. A A1 A2 b b1 b2 C D E e L L1 ∅P Q R S Millimeter Min. Max. 4.7 5.3 2.2 2.54 2.2 2.6 1.0 1.4 1.65 2.13 2.87 3.12 .4 .8 20.80 21.46 15.75 16.26 5.20 5.72 19.81 20.32 4.50 3.55 3.65 5.89 6.40 4.32 5.49 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Millimeter Min. Max. 4.06 4.83 2.03 2.79 0.51 0.99 1.14 1.40 0.46 0.74 1.14 1.40 8.64 9.65 7.11 8.13 9.65 10.29 6.86 8.13 2.54 BSC 14.61 15.88 2.29 2.79 1.02 1.40 1.27 1.78 0 0.38 0.46 0.74 Inches Min. Max. .160 .190 .080 .110 .020 .039 .045 .055 .018 .029 .045 .055 .340 .380 .280 .320 .380 .405 .270 .320 .100 BSC .575 .625 .090 .110 .040 .055 .050 .070 0 .015 .018 .029 ∅P Min. Recommended Footprint e (Dimensions in inches and (mm)) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025