(IXFK30N100Q2 / IXFX30N100Q2) HiPerFET Power MOSFETs Q-Class

www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class IXFK 30N100Q2 IXFX 30N100Q2 VDSS = 1000 V = 30 A ID25 RDS(on) = 0.40 Ω trr ≤ 300 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-264 PLUS-247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1000 1000 ±30 ±40 30 120 30 60 4.0 20 735 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ J V/ns W °C °C °C °C G = Gate S = Source PLUS 247TM (IXFX) G D (TAB) D TO-264 AA (IXFK) G D S D (TAB) D = Drain TAB = Drain 0.9/6 Nm/lb.in. 6 10 g g Features Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 5.0 ±200 TJ = 25°C TJ = 125°C 50 2 0.40 V V nA µA mA Ω Advantages Easy to mount Space savings High power density Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved DS99160(4/04) IXFK 30N100Q2 IXFX 30N100Q2 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 20 30 8200 VGS = 0 V, VDS = 25 V, f = 1 MHz 760 140 22 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1.0 Ω (External), 14 60 10 186 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 46 82 0.17 TO-264 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) PLUS 247TM Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 15 V; ID = 0.5 • ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 30 120 1.5 250 A A V ns µC A Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = 25A, -di/dt = 100 A/µs, VR = 100 V 1 10 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXFK 30N100Q2 IXFX 30N100Q2 Fig. 1. Output Characteristics @ 25ºC 30 27 24 21 VGS = 10V 7V 6.5V 60 55 50 45 6V 40 35 30 25 20 15 5V 10 5 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 3 6 9 12 15 18 21 24 27 30 5V 5.5V 6V VGS = 10V 7V Fig. 2. Extended Output Characteristics @ 25ºC I D - Amperes 18 15 12 9 6 3 0 5.5V I D - Amperes 6.5V V D S - Volts Fig. 3. Output Characteristics @ 125ºC 30 27 24 VGS = 10V 7V 6V 3.1 2.8 VGS = 10V V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature I D - Amperes 21 18 15 12 9 6 3 0 0 3 6 9 4.5V 12 15 18 21 24 27 5V 5.5V R D S ( o n ) - Normalized 2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 -50 -25 0 I D = 15A I D = 30A V D S - Volts TJ - Degrees Centigrade 25 50 75 100 125 150 Fig. 5. RDS(on) Norm alized to 2.8 2.6 0.5 ID25 Value vs. ID VGS = 10V Fig. 6. Drain Current vs. Case Tem perature 33 30 27 24 R D S ( o n ) - Normalized 2.4 2.2 I D - Amperes TJ = 25ºC 35 40 45 50 55 60 2 1.8 1.6 1.4 1.2 1 0.8 0 5 10 TJ = 125ºC 21 18 15 12 9 6 3 0 15 20 I D - Amperes 25 30 -50 -25 TC - Degrees Centigrade 0 25 50 75 100 125 150 © 2004 IXYS All rights reserved IXFK 30N100Q2 IXFX 30N100Q2 Fig. 7. Input Adm ittance 40 35 30 25 20 15 10 5 0 3.5 4 4.5 5 5.5 6 6.5 60 55 50 45 40 35 30 25 20 15 10 5 0 0 5 10 15 20 25 30 35 40 45 50 TJ = -40ºC 25ºC 125ºC Fig. 8. Transconductance TJ = 125ºC 25ºC -40ºC V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 90 80 70 10 9 8 7 VDS = 500V I D = 15A I G = 10mA g f s - Siemens I D - Amperes I D - Amperes Fig. 10. Gate Charge I S - Amperes VG S - Volts TJ = 25ºC 60 50 40 30 20 10 0 0.4 0.5 0.6 0.7 TJ = 125ºC 6 5 4 3 2 1 0 V S D - Volts 0.8 0.9 1 1.1 1.2 0 20 40 60 80 100 120 140 160 180 200 Q G - nanoCoulombs Fig. 12. Maxim um Transient Therm al Resistance 1.00 Fig. 11. Capacitance 10000 f = 1MHz C iss Capacitance - picoFarads R( t h ) J C - ºC / W 1000 C oss 0.10 C rss 100 0 5 10 15 20 25 30 35 40 0.01 1 10 100 1000 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 Pulse Width - milliseconds 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344