High Voltage IGBT

www.DataSheet4U.com High Voltage IGBT IXDN 75N120 VCES = 1200 V = 150 A IC25 VCE(sat) typ = 2.2 V Short Circuit SOA Capability Square RBSOA C G miniBLOC, SOT-227 B E153432 G E E E E C Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC VISOL TJ Tstg Md Weight Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 15 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 15 W, non repetitive TC = 25°C IGBT Maximum Ratings 1200 1200 ±20 ±30 150 95 190 ICM = 150 VCEK < VCES 10 660 2500 -40 ... +150 -40 ... +150 V V V V A A A A µs W V~ °C °C E = Emitter x, G = Gate, C = Collector E = Emitter x x Either Emitter terminal can be used as Main or Kelvin Emitter Features q q q q q q q q 50/60 Hz; IISOL £ 1 mA NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled International standard package miniBLOC Advantages q q q Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Space savings Easy to mount with 2 screws High power density Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25°C TJ = 125°C 6 6.5 V V Typical Applications q q q V(BR)CES VGE(th) ICES IGES VCE(sat) VGE = 0 V IC = 3 mA, VCE = VGE VCE = VCES q q AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies 4 mA mA ± 500 nA VCE = 0 V, VGE = ± 20 V IC = 75 A, VGE = 15 V 2.2 2.7 V 031 © 2000 IXYS All rights reserved 1-4 www.DataSheet4U.com IXDN 75N120 Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 5500 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 75 A, VGE = 15 V, VCE = 0.5 VCES 750 330 360 100 Inductive load, TJ = 125°C IC = 75 A, VGE = ±15 V, VCE = 600 V, RG = 15 W 50 650 50 12.1 10.5 pF pF pF nC ns ns ns ns mJ mJ 0.19 K/W Package with heatsink compound 0.1 K/W Dim. A B C D E F G H J K L M N O P Q R S T U V W Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08 miniBLOC, SOT-227 B Cies Coes Cres Qg td(on) tr td(off) tf Eon Eoff RthJC RthCK M4 screws (4x) supplied © 2000 IXYS All rights reserved 2-4 www.DataSheet4U.com IXDN 75N120 175 A 150 IC 125 175 TJ = 125°C TJ = 25°C VGE=17V 15V 13V 11V A 150 IC 125 100 75 VGE=17V 15V 13V 11V 100 75 50 25 0 0.0 0.5 1.0 1.5 2.0 2.5 VCE 9V 50 25 0 0.0 9V 3.0 V 0.5 1.0 1.5 2.0 2.5 3.0 VCE 3.5 V Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 150 VCE = 20V 125 A IC TJ = 25°C 300 A 250 IF 200 150 100 50 0 TJ = 125°C TJ = 25°C 100 75 50 25 0 5 6 7 8 9 10 VGE 11 V 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics 20 V VGE 15 120 VCE = 600V IC = 75A 300 ns trr A IRM trr 80 200 10 40 5 IRM TJ = 125°C VR = 600V IF = 75A 100 IXDN75N120 0 0 100 200 300 QG 0 0 200 400 600 800 A/ms -di/dt 0 1000 400 nC Fig. 4 Typ. turn on gate charge © 2000 IXYS All rights reserved 3-4 www.DataSheet4U.com IXDN 75N120 40 mJ Eon Eon td(on) tr 160 ns 120 t 80 20 mJ Eoff 15 Eoff td(off) 800 ns 600 t 400 30 20 10 VCE = 600V VGE = ±15V 10 VCE = 600V VGE = ±15V RG = 15W TJ = 125°C 40 5 RG = 15W 200 TJ = 125°C 0 0 50 100 IC 0 0 0 50 100 IC tf 150 A 0 150 A Fig. 5 Typ. turn on energy and switching times versus collector current 25 mJ 200 ns 160 t 120 tr 80 40 0 56 Eoff Fig. 6 Typ. turn off energy and switching times versus collector current 25 mJ 20 15 10 5 0 0 8 16 24 32 RG tf 2000 VCE = 600V VGE = ±15V IC = 75A TJ = 125°C 20 Eon VCE = 600V VGE = ±15V IC = 75A TJ = 125°C td(on) Eon td(off) ns 1600 t 1200 800 400 0 15 10 5 0 0 8 16 24 32 RG Eoff 40 48 W 40 48 W 56 Fig. 7 Typ. turn on energy and switching times versus gate resistor 200 A ICM 150 1 K/W 0.1 ZthJC 0.01 Fig.8 Typ. turn off energy and switching times versus gate resistor 100 RG = 15W TJ = 125°C VCEK < VCES 0.001 0.0001 50 single pulse IXDN75N120 0 0 200 400 600 800 1000 1200 V VCE 0.00001 0.00001 0.0001 0.001 0.01 t 0.1 s 1 Fig. 9 Reverse biased safe operating area RBSOA Fig. 10 Typ. transient thermal impedance © 2000 IXYS All rights reserved 4-4