Power MOSFET

PD - 94547A HEXFET Power MOSFET Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current IRLR7833 IRLU7833 ® Qg 33nC VDSS RDS(on) max 30V 4.5m: D-Pak IRLR7833 I-Pak IRLU7833 Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 140f 99f 560 140 71 0.95 -55 to + 175 Units V g Maximum Power Dissipation g Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range ™ A W W/°C °C Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.6mm from case) 10 lbfxin (1.1Nxm) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient Typ. Max. 1.05 50 110 Units °C/W gà ––– ––– ––– Notes  through … are on page 11 www.irf.com 1 3/19/04 IRLR/U7833 Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units 30 ––– ––– ––– 1.4 ––– ––– ––– ––– ––– 66 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 19 3.6 4.4 ––– -6.0 ––– ––– ––– ––– ––– 33 8.7 2.1 13 9.9 15 22 14 6.9 23 15 4010 950 470 ––– ––– 4.5 5.5 2.3 ––– 1.0 150 100 -100 ––– 50 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF nC nC V Conditions VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 15A V VGS = 4.5V, ID VDS = VGS, ID = 250µA f = 12A f mV/°C µA VDS = 24V, VGS = 0V nA S VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 12A VDS = 16V VGS = 4.5V ID = 12A See Fig. 16 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V f ns ID = 12A Clamped Inductive Load VGS = 0V VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS IAR EAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentÙ Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 530 20 14 Units mJ A mJ ™ Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ùh Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 39 37 140f A 560 1.0 58 55 V ns nC Conditions MOSFET symbol showing the integral reverse G S D p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V TJ = 25°C, IF = 12A, VDD = 15V di/dt = 100A/µs f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRLR/U7833 1000 TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.25V 1000 TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.25V ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 100 BOTTOM 10 BOTTOM 1 10 2.25V 0.1 2.25V 20µs PULSE WIDTH Tj = 25°C 0.01 0.1 1 10 100 1000 1 0.1 1 20µs PULSE WIDTH Tj = 175°C 10 100 1000 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.0 2.0 RDS(on) , Drain-to-Source On Resistance ID = 30A VGS = 10V ID, Drain-to-Source Current (Α) 100.00 T J = 175°C 1.5 10.00 (Normalized) 1.00 T J = 25°C VDS = 25V 20µs PULSE WIDTH 1.0 0.10 2.0 3.0 4.0 5.0 6.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRLR/U7833 100000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd 6.0 ID= 12A VGS , Gate-to-Source Voltage (V) 5.0 VDS= 24V VDS= 15V C, Capacitance(pF) 10000 4.0 Ciss Coss 1000 3.0 2.0 Crss 1.0 100 1 10 100 0.0 0 10 20 30 40 50 VDS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.00 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100.00 T J = 175°C 10.00 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 100µsec 1.00 T J = 25°C 10 Tc = 25°C Tj = 175°C Single Pulse 1 1 10 1msec VGS = 0V 0.10 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-to-Drain Voltage (V) 10msec 100 1000 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLR/U7833 150 2.5 LIMITED BY PACKAGE 125 VGS(th) Gate threshold Voltage (V) 2.0 100 ID , Drain Current (A) 1.5 ID = 250µA 75 1.0 50 0.5 25 0 25 50 75 100 125 150 175 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 ° TC, Case Temperature (°C) T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature 10 (Z thJC ) 1 D = 0.50 Thermal Response 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 t1/ t 2 +TC 1 P DM t1 t2 J = P DM x Z thJC 0.1 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLR/U7833 15V 15000 EAS , Single Pulse Avalanche Energy (mJ) VDS L DRIVER 12500 ID 8.2A 14A BOTTOM 20A TOP RG 20V VGS D.U.T IAS tp 10000 + V - DD A 0.01Ω 7500 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 5000 2500 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS VDS VGS RG Current Regulator Same Type as D.U.T. RD Fig 12b. Unclamped Inductive Waveforms D.U.T. + -V DD V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 50KΩ 12V .2µF .3µF Fig 14a. Switching Time Test Circuit D.U.T. + V - DS VDS 90% VGS 3mA IG ID 10% VGS td(on) tr t d(off) tf Current Sampling Resistors Fig 13. Gate Charge Test Circuit Fig 14b. Switching Time Waveforms 6 www.irf.com IRLR/U7833 D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - „ +  RG • • • • dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Waveform www.irf.com 7 IRLR/U7833 Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. Power losses in the control switch Q1 are given by; Synchronous FET The power loss equation for Q2 is approximated by; * Ploss = Pconduction + P + Poutput drive Ploss = Irms × Rds(on) + ( g × Vg × f ) Q ( 2 ) Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput This can be expanded and approximated by; Q  +  oss × Vin × f + (Qrr × Vin × f ) 2  *dissipated primarily in Q1. Ploss = (Irms 2 × Rds(on ) )  Qgd +I × × Vin × ig  + (Qg × Vg × f ) +  Qoss × Vin × f  2    Qgs 2 f +  I × × Vin × f  ig   This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Q gs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitance’s Cds and Cdg when multiplied by the power supply input buss voltage. For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the imp