SMPS MOSFET

PD - 94492 SMPS MOSFET Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current IRLR7811W HEXFET® Power MOSFET VDSS 30V RDS(on) max 10.5mΩ Qg 19nC D-Pak Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 100°C VGS TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation* Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 64„ 45„ 260 71 1.5 0.48 ± 12 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. ––– ––– ––– Max. 2.1 50 110 Units °C/W Notes  through „ are on page 9 www.irf.com 1 06/10/02 IRLR7811W Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Control Fet Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Total Gate Charge Sync Fet Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) ∆VGS(th) /∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Q sw Qg Qoss Rg td(on) tr td(off) tf Ciss Coss Crss Min. 30 ––– ––– ––– ––– ––– ––– ––– ––– ––– 58 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 27 6.5 7.5 1.5 -5.0 ––– ––– ––– ––– ––– 21 5.0 1.7 6.6 5.5 8.3 17 10 1.6 18 4.8 11 23 2260 420 180 Max. ––– ––– 10 12 2.5 ––– 30 150 100 -100 ––– 31 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units Conditions V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA † VGS = 10V, ID = 15A „ mΩ VGS = 4.5V, ID = 12A V VDS = VGS, ID = 250µA mV/°C VDS = 24V, VGS = 0V µA VDS = 24V, VGS = 0V, TJ = 125°C VGS = 12V nA VGS = -12V S VDS = 15V, ID = 12A nC VDS = 20V VGS = 4.5V nC ID = 12A VDS = 16V, VGS = 0V VDD = 16V, VGS = 4.5V„ ID = 12A Clamped Inductive Load VGS = 0V VDS = 15V ƒ = 1.0MHz ns pF Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 140 12 7.1 Units mJ A mJ Diode Characteristics IS ISM VSD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 64„ showing the A G integral reverse ––– ––– 260 S p-n junction diode. ––– ––– 1.2 V TJ = 25°C, IS = 12A, VGS = 0V „ ––– 30 45 ns TJ = 25°C, IF =12A ––– 27 41 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRLR7811W 10000 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP 1000 ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) 1000 100 100 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP 10 2.5V 1 10 2.5V 0.1 20µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 0.1 1 20µs PULSE WIDTH Tj = 175°C 10 100 0.01 VDS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.00 2.0 I D = 64A  ID , Drain-to-Source Current (Α ) R DS(on) , Drain-to-Source On Resistance 100.00 T J = 175°C 1.5 (Normalized) 1.0 10.00 T J = 25°C VDS = 15V 20µs PULSE WIDTH 2.0 3.0 4.0 5.0 6.0 7.0 0.5 1.00 0.0 -60 -40 -20 0 20 40 60 80 V GS = 10V  100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLR7811W 10000 VGS = 0V, f = 1 MHZ Ciss = C + C , C SHORTED gs gd ds Crss = C gd Coss = C + Cgd ds 6 ID = 12A   VDS = 24V VDS = 15V 5 C, Capacitance(pF) VGS, Gate-to-Source Voltage (V) C iss 4 1000 C oss 2 C rss 1 100 1 10 100 0 0 5 10 15 20 25 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 I SD, Reverse Drain Current (A) TJ = 175 ° C  ID , Drain-to-Source Current (A) 100 100µsec 10 1msec 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 VDS , Drain-to-Source Voltage (V) 100 10msec 10 T J = 25 ° C  1 0.1 0.0 0.5 1.0 1.5 V GS = 0 V  2.0 2.5 V SD,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLR7811W 70  LIMITED BY PACKAGE 60 VDS VGS RG RD D.U.T. + 50 -VDD I D , Drain Current (A) 40 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 20 Fig 10a. Switching Time Test Circuit VDS 10 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 (Z thJC ) 1 D = 0.50 0.20 Thermal Response 0.10 0.05 0.1 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001  t1/ t 2 J = P DM x Z thJC  P DM t1 t2 +T C 1 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLR7811W 400 1 5V VD S L D R IV E R 320  TOP ID 4.9A 8.5A 12A BOTTOM RG VGS 20V D .U .T IA S tp 0 .0 1 Ω EAS , Single Pulse Avalanche Energy (mJ) + - VD D 240 A 160 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 80 0 25 50 75 100 125 150 175 Starting Tj, Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms 2.5 Current Regulator Same Type as D.U.T. VGS(th) Gate threshold Voltage (V) 50KΩ 2.0 12V .2µF .3µF 1.5 D.U.T. + V - DS ID = 250µA 1.0 VGS 3mA 0.5 IG ID Current Sampling Resistors 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 Fig 14. Gate Charge Test Circuit T J , Temperature ( °C ) Fig 13. Threshold Voltage Vs. Temperature 6 www.irf.com IRLR7811W Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 15. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRLR7811W TO-252AA (D-Pak) Package Outline Dimensions are shown in millimeters (inches) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 6 .7 3 ( .2 6 5 ) 6 .3 5 ( .2 5 0 ) -A5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 1 .1 4 ( .0 4 5 ) 0 .8 9 ( .0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1.0 2 (.0 4 0 ) 1.6 4 (.0 2 5 ) 1 2 3 0 .5 1 (.0 2 0 ) M IN . 1 0 .42 (.4 1 0 ) 9 .4 0 (.3 7 0 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU R CE 4 - D R A IN -B1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 3X 2X 1 .1 4 (.0 4 5 ) 0 .7 6 (.0 3 0 ) 2 .2 8 ( .0 9 0 ) 4 .5 7 (.1 8 0 ) 0 .8 9 (.0 3 5 ) 0 .6 4 (.0 2 5 ) 0 .2 5 (.0 1 0 ) M AMB NOTE S: 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N TR O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X . + 0 .1 6 (.0 0 6 ). TO-252AA (D-Pak) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WITH AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO IRFU120 12 916A 34 AS S EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A 8 www.irf.com IRLR7811W D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16 .3 ( .641 ) 15 .7 ( .619 ) 12.1 ( .47 6 ) 11.9 ( .46 9 ) F E E D D IR E C T IO N 8.1 ( .318 ) 7.9 ( .312 ) FE E D D IR E C T IO N N O T ES : 1 . C O N T R O LLIN G D IME N S IO N : M ILL IM ET E R . 2 . A LL D IM EN S IO N S A R E SH O W N IN M ILLIM ET E R S ( IN C H E S ). 3 . O U TL IN E C O N FO R MS T O E IA -481 & E IA -54 1. 1 3 IN C H 16 m m N O TE S : 1. O U TL IN E C O N F O R M S T O E IA -481 . Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ Calculated continuous current ba