DIGITAL AUDIO MOSFET

PD - 95755 DIGITAL AUDIO MOSFET IRLIB4343PbF Key Parameters Features l l l l l l l l Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI 175°C Operating Junction Temperature for Ruggedness Repetitive Avalanche Capability for Robustness and Reliability Lead-Free VDS RDS(ON) typ. @ VGS = 10V RDS(ON) typ. @ VGS = 4.5V Qg typ. TJ max 55 42 57 28 175 V m: m: nC °C D G S TO-220 Full-Pak Description This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Max. 55 ±20 19 13 80 39 20 0.26 -40 to + 175 10lb in (1.1N m) Units V A c W W/°C °C Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Mounting torque, 6-32 or M3 screw x x Thermal Resistance RθJC RθJA Junction-to-Case f Parameter Typ. ––– ––– Max. 3.84 65 Units °C/W Junction-to-Ambient f Notes  through … are on page 7 www.irf.com 1 8/24/04 IRLIB4343PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs Qgd Qgodr td(on) tr td(off) tf Ciss Coss Crss Coss LD LS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Internal Drain Inductance Internal Source Inductance Min. 55 ––– ––– ––– 1.0 ––– ––– ––– ––– ––– 8.8 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units ––– 15 42 57 ––– -4.4 ––– ––– ––– ––– ––– 28 3.5 9.5 15 5.7 19 23 5.3 740 150 59 250 4.5 7.5 ––– ––– 50 65 ––– ––– 2.0 25 100 -100 ––– 42 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– nH ––– pF ns Conditions VGS = 0V, ID = 250µA V mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 4.7A V mV/°C µA nA S VGS = 4.5V, ID = 3.8A VDS = VGS, ID = 250µA VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 25V, ID = 19A VDS = 44V VGS = 10V ID = 19A See Fig. 6 and 19 VDD = 28V, VGS = 10V ID = 19A RG = 2.5Ω VGS = 0V VDS = 50V ƒ = 1.0MHz, See Fig.5 VGS = 0V, VDS = 0V to -44V Between lead, 6mm (0.25in.) from package and center of die contact G D e e Ãe S Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Ãg d Typ. Max. Units mJ A mJ Repetitive Avalanche Energy g Min. ––– ––– ––– ––– ––– ––– 130 See Fig. 14, 15, 17a, 17b Diode Characteristics Parameter IS @ TC = 25°C Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD trr Qrr Typ. Max. Units ––– ––– ––– 52 100 19 A 110 1.2 78 150 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 19A, VGS = 0V D Ù S Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge e TJ = 25°C, IF = 19A di/dt = 100A/µs e 2 www.irf.com IRLIB4343PbF 1000 TOP VGS 15V 10V 8.0V 4.5V 3.5V 3.0V 2.5V 2.3V 1000 TOP VGS 15V 10V 8.0V 4.5V 3.5V 3.0V 2.5V 2.3V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 10 10 2.3V 1 1 2.3V ≤ 60µs PULSE WIDTH Tj = 25°C ≤ 60µs PULSE WIDTH Tj = 175°C 0.1 0.1 1 10 100 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 Fig 2. Typical Output Characteristics 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (Α) ID = 19A VGS = 10V 2.0 100.0 TJ = 25°C T J = 175°C 10.0 1.5 1.0 1.0 VDS = 30V ≤ 60µs PULSE WIDTH 0.1 0 2 4 6 8 10 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 20 10000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd ID= 19A VDS= 44V VDS= 28V VDS= 11V 16 C, Capacitance (pF) 1000 Ciss Coss Crss 12 8 100 4 FOR TEST CIRCUIT SEE FIGURE 19 10 1 10 100 0 0 10 20 30 40 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage www.irf.com 3 IRLIB4343PbF 1000.0 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD, Reverse Drain Current (A) 100.0 TJ = 175°C 10.0 ID, Drain-to-Source Current (A) 100 100µsec 10 1msec Tc = 25°C Tj = 175°C Single Pulse 1 1 10 10msec 1.0 TJ = 25°C VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 100 1000 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 20 VGS(th) Gate threshold Voltage (V) 2.0 Fig 8. Maximum Safe Operating Area ID, Drain Current (A) 15 1.5 ID = 250µA 10 1.0 5 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature 10 Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 0.1 0.02 0.01 τJ Ri (°C/W) 1.0096 0.9019 1.9296 τi (sec) 0.001090 0.038534 2.473000 τ1 τ2 0.01 Ci= τi/Ri Ci= i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRLIB4343PbF RDS(on), Drain-to -Source On Resistance ( mΩ) 200 600 EAS , Single Pulse Avalanche Energy (mJ) ID = 19A 150 500 ID TOP 2.7A 3.3A BOTTOM 13A 400 100 300 T J = 125°C 50 200 T J = 25°C 0 2.0 4.0 6.0 8.0 10.0 100 0 25 50 75 100 125 150 175 VGS, Gate-to-Source Voltage (V) Starting T J , Junction Temperature (°C) Fig 12. On-Resistance Vs. Gate Voltage 1000 Fig 13. Maximum Avalanche Energy Vs. Drain Current Duty Cycle = Single Pulse Avalanche Current (A) 100 0.01 10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 0.05 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 tav (sec) Fig 14. Typical Avalanche Current Vs.Pulsewidth 200 EAR , Avalanche Energy (mJ) TOP Single Pulse BOTTOM 1% Duty Cycle ID = 13A 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 15. Maximum Avalanche Energy Vs. Temperature Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 17a, 17b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). t av = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav www.irf.com 5 IRLIB4343PbF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - „ +  RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Body Diode Forward Drop Inductor Current Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 15V LD VDS VDS L DRIVER + VDD - RG VGS 20V D.U.T IAS tp + V - DD A D.U.T VGS Pulse Width < 1µs Duty Factor < 0.