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www.DataSheet4U.com PD-94342D RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA67260 100K Rads (Si) IRHNA63260 300K Rads (Si) RDS(on) 0.028Ω 0.028Ω ID 56A∗ 56A∗ IRHNA67260 200V, N-CHANNEL TECHNOLOGY International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. SMD-2 Features: n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ T C = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight ∗ Current is limited by Package For footnotes refer to the last page 56∗ 40 224 250 2.0 ±20 268 56∗ 25 5.0 -55 to 150 300 (for 5s) 3.3 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 02/16/06 IRHNA67260 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 200 — — 2.0 40 — — — — — — — — — — — — Typ Max Units — 0.17 — — — — — — — — — — — — — — 2.8 — — 0.028 4.0 — 10 25 100 -100 240 70 60 40 60 70 30 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 40A à VDS = VGS, ID = 1.0mA VDS = 25V, IDS = 40A à VDS =160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 56A VDS = 100V VDD = 100V, ID = 56A, VGS = 12V, RG = 2.35Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 100KHz f = 0.73MHz, open drain Ciss C oss C rss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance — — — — 8120 949 13 1.1 — — — — pF Ω Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min Typ Max Units — — — — — — — — — — 56∗ 224 1.2 640 11.7 Test Conditions A V ns µC Tj = 25°C, IS = 56A, VGS = 0V à Tj = 25°C, IF = 56A, di/dt ≤ 100A/µs VDD ≤ 25V à ton Forward Turn-On Time ∗ Current is limited by Package. Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 0.5 °C/W Test Conditions Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNA67260 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source „ On-State Resistance (TO-3) Static Drain-to-Source On-state „ Resistance (SMD-2) Diode Forward Voltage „ Upto 300K Rads (Si)1 Units V nA µA Ω Ω V Test Conditions ˆ VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS=160V, VGS=0V VGS = 12V, ID = 40A VGS = 12V, ID = 40A VGS = 0V, ID = 56A Min 200 2.0 — — — — — — Max — 4.0 100 -100 10 0.029 0.028 1.2 1. Part numbers IRHNA67260, IRHNA63260 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Xe Xe Au LET (MeV/(mg/cm2)) 43 59 90 Energy (MeV) 2441 825 1480 Range (µm) 205 66 80 @VGS= 0V VDS (V) @VGS= -5V @VGS= -10V @VGS= -15V 200 200 170 200 200 170 200 200 -- 190 190 -- 240 200 160 120 80 40 0 0 -5 -10 VGS -15 -20 Xe - LET=43 Xe - LET=59 Au - LET=90 VDS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNA67260 Pre-Irradiation 1000 VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 100 5.0V 10 10 5.0V 1 0.1 1 60µs PULSE WIDTH Tj = 25°C 10 100 60µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 63A 56A ID, Drain-to-Source Current ( Α) TJ = 150°C 100 T J = 25°C 2.0 1.5 1.0 10 0.5 1 5 5.5 6 6.5 VDS = 50V 15 60µs PULSE WIDTH 7 7.5 8 8.5 9 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHNA67260 14000 12000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 100KHz 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 56A 63A 16 VDS = 160V VDS = 100V VDS = 40V C, Capacitance (pF) 10000 8000 Ciss Coss 12 6000 4000 2000 0 8 4 Crss 1 10 100 0 0 50 100 FOR TEST CIRCUIT SEE FIGURE 13 150 200 250 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current ( Α) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 150°C ID, Drain-to-Source Current (A) 100 10 T J = 25°C 100µs 10 1ms 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 1.0 10 100 10ms 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD , Source-to-Drain Voltage (V) 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHNA67260 Pre-Irradiation 70 VDS LIMITED BY PACKAGE RD 60 VGS RG D.U.T. + ID , Drain Current (A) 50 40 30 20 10 0 25 50 75 100 125 150 -V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% T , , Case Temperature (°C) ( °C) T Case Temperature C 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNA67260 500 EAS , Single Pulse Avalanche Energy (mJ) 15V 400 TOP BOTTOM ID 25A 35.4A 56A VDS L DRIVER 300 RG D.U.T. IAS + - VDD A 200 VGS 20V tp 0.01Ω 100 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V(BR)DSS tp Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHNA67260 Pre-Irradiation Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L= 0.17mH Peak IL = 56A, VGS = 12V  I SD ≤ 56A, di/dt ≤ 875A/µs, VDD ≤ 200V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-ST

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IRHNA63260

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