(IRHLUB79x0Z4) POWER MOSFET

www.DataSheet4U.com PD - 94764C RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) Product Summary Part Number Radiation Level RDS(on) ID IRHLUB7970Z4 100K Rads (Si) 1.2Ω -0.53A IRHLUB7930Z4 300K Rads (Si) 1.2Ω -0.53A IRHLUB7970Z4 60V, P-CHANNEL TECHNOLOGY ™ International Rectifier’s R7TM Logic Level Power Mosfets provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. UB Features: n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Complimentary N-Channel Available IRHLUB770Z4 Available on Tape & Reel Absolute Maximum Ratings Parameter ID @ VGS = -4.5V, TC = 25°C ID @ VGS = -4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page -0.53 -0.33 -2.12 0.6 0.0045 ±10 3.5 -0.53 0.06 -4.4 -55 to 150 300 (for 5s) 43 (Typical ) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C mg www.irf.com 1 09/03/04 IRHLUB7970Z4 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min -60 — — -1.0 0.8 — — — — — — — — — — — — Typ Max Units — -0.055 — — — — — — — — — — — — — — 8.4 — — 1.2 -2.0 — -1.0 -10 -100 100 3.6 1.5 1.8 22 22 27 27 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1.0mA VGS = -4.5V, ID = -0.33A à VDS = VGS, ID = -250µA VDS = -10V, IDS = -0.33A à VDS= -48V ,VGS=0V VDS = -48V, VGS = 0V, TJ =125°C VGS = -10V VGS =10V VGS = -4.5V, ID = -0.53A VDS = -30V VDD = -30V, ID = -0.53A, VGS =-4.5V, RG = 24Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz f = 5.1MHz, open drain Ciss C oss C rss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance — — — — 167 43 10 29 — — — — pF Ω Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -0.53 -2.12 -5.0 50 25 Test Conditions A V ns nC Tj = 25°C, IS = -0.53A, VGS = 0V à Tj = 25°C, IF = -0.53A, di/dt ≤ -100A/µs VDD ≤ -25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJA Junction-to-Ambient Min Typ Max Units — — 220 °C/W Test Conditions Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHLUB7970Z4 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source „ On-State Resistance (TO-39) Static Drain-to-Source On-state „ Resistance (UB) Diode Forward Voltage „ Upto 300K Rads (Si)1 Min -60 -1.0 — — — — — — Max Units V nA µA Ω Ω V Test Conditions ˆ VGS = 0V, ID = -250µA VGS = VDS , ID = -250µA VGS = -10V VGS = 10V VDS = -48V, VGS=0V VGS = -4.5V, ID = -0.33A VGS = -4.5V, ID = -0.33A VGS = 0V, ID = -0.53A — -2.0 -100 100 -1.0 1.2 1.2 -5.0 1. Part numbers IRHLUB7970Z4, IRHLUB7930Z4 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LET (MeV/(mg/cm2)) Br I Au 37 60 82 Energy Range (MeV) 285 345 357 (µm) 36.8 32.7 28.5 @VGS= VDS (V) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= 0V -60 -60 -60 2V -60 -60 -60 4V -60 -60 -60 5V -60 -60 -60 6V -60 -60 - 7V -50 -20 - 8V -35 - 10V -25 - -70 -60 -50 -40 -30 -20 -10 0 0 2 4 6 VGS 8 10 12 Br I Au Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com VDS 3 IRHLUB7970Z4 Pre-Irradiation 10 -I D, Drain-to-Source Current (A) VGS TOP -10V -7.5V -5.0V -4.0V -3.5V -3.0V -2.5V BOTTOM -2.25V 10 -I D, Drain-to-Source Current (A) VGS -10V -7.5V -5.0V -4.0V -3.5V -3.0V -2.5V BOTTOM -2.25V TOP 1 -2.25V 1 -2.25V 0.1 0.1 1 60µs PULSE WIDTH Tj = 25°C 10 100 60µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -0.53A -I D, Drain-to-Source Current ( Α) 1.5 1.0 T J = 25°C T J = 150°C VDS = -25V 15 60µs PULSE WIDTH 1 2 2.2 2.4 2.6 2.8 3 -VGS , Gate-to-Source Voltage (V) 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHLUB7970Z4 250 -VGS , Gate-to-Source Voltage (V) 200 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 12 ID = -0.53A 10 VDS =-48V VDS =-30V VDS =-12V C, Capacitance (pF) Ciss 150 8 6 100 Coss 4 50 2 Crss 0 0 FOR TEST CIRCUIT SEE FIGURE 13 0 1 2 3 4 5 6 1 10 100 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 10 OPERATION IN THIS AREA LIMITED BY RDS(on) -I SD , Reverse Drain Current ( Α) T J = 150°C 1 T J = 25°C -I D, Drain-to-Source Current (A) 1 100µ s 1ms 0.1 0.1 Tc = 25°C Tj = 150°C Single Pulse 1 10 10ms 0.01 0 1 2 3 VGS = 0V 4 5 0.01 100 1000 -V SD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHLUB7970Z4 Pre-Irradiation 0.6 V DS V GS RG V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD 0.5 D.U.T. + -ID , Drain Current (A) 0.4 0.2 Fig 10a. Switching Time Test Circuit 0.1 VGS td(on) tr t d(off) tf 0.0 10% 25 50 75 100 125 150 TC , Case Temperature ( ° C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1000 Thermal Response (Z thJC ) 100 D = 0.50 0.20 0.10 0.05 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T = P DM x Z thJC + TC J 0.01 0.1 1 10 10 0.02 0.01 1 0.00001 0.0001 0.001 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com - V DD Pre-Irradiation IRHLUB7970Z4 EAS , Single Pulse Avalanche Energy (mJ) VDS L 8 7 6 5 4 3 2 1 0 RG D.U.T IAS + DRIVER V DD VDD A ID -0.24A -0.34A BOTTOM -0.53A TOP VGS -20V tp 0.01Ω 15V Fig 12a. Unclamped Inductive Test Circuit I AS 25 Starting TJ , Junction Temperature ( °C) 50 75 100 125 150 Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com + D.U.T. - -4.5V -12V 12V .2µF .3µF QGS QGD VDS 7 IRHLUB7970Z4 Pre-Irradiation Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = - 25V, starting TJ = 25°C, L= 25mH Peak IL = -0.53A, VGS = -10V  ISD ≤ -0.53A, di/dt ≤ -100A/µs, VDD ≤ - 60V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. -10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimens