(IRHLUB7x0Z4) POWER MOSFET

www.DataSheet4U.com PD - 95813 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) Product Summary Part Number Radiation Level RDS(on) IRHLUB770Z4 100K Rads (Si) 0.55Ω IRHLUB730Z4 300K Rads (Si) 0.55Ω IRHLUB740Z4 600K Rads (Si) 0.55Ω IRHLUB780Z4 1000K Rads (Si) 0.55Ω ID 0.8A 0.8A 0.8A 0.8A IRHLUB770Z4 60V, N-CHANNEL c TECHNOLOGY UB International Rectifier’s R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. Features: n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary P-Channel Available IRHLUB7970Z4 Absolute Maximum Ratings Parameter ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight 0.8 0.5 3.2 0.6 0.0045 ±10 2.0 0.8 0.06 4.0 -55 to 150 300 (for 5s) 43 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C mg For footnotes refer to the last page www.irf.com 1 02/02/04 IRHLUB770Z4 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Min 60 Typ Max Units — 0.07 — — — — — — — — — — — — — — 8.4 — — 0.55 2.0 — 1.0 10 100 -100 3.6 1.5 1.8 8.0 10 26 10 — V V/°C Ω V S( ) µA Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 4.5V, ID = 0.5A ➃ IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — nA nC ns nH Ciss C oss C rss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance — — — — 166 42 3.5 12 — — — — pF Ω Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 0.8 3.2 1.2 70 75 A V ns nC Tj = 25°C, IS = 0.8A, VGS = 0V ➃ Tj = 25°C, IF = 0.8A, di/dt ≤ 100A/µs VDD ≤ 25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJA Junction-to-Case Min Typ Max Units — — 220 °C/W Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 Ω ∆BV DSS /∆T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage 1.0 g fs Forward Transconductance 0.23 IDSS Zero Gate Voltage Drain Current — — VDS = VGS, ID = 250µA VDS = 10V, IDS = 0.5A ➃ VDS= 48V ,VGS= 0V VDS = 48V, VGS = 0V, TJ =125°C VGS = 10V VGS = -10V VGS = 4.5V, ID = 0.8A VDS = 30V VDD = 30V, ID = 0.8A, VGS = 4.5V, RG = 24Ω Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz f = 5.0MHz, open drain Test Conditions Test Conditions www.irf.com Radiation Characteristics Pre-Irradiation IRHLUB770Z4 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-39) Static Drain-to-Source ➃ On-State Resistance (UB) Diode Forward Voltage ➃ Up to 600K Rads(Si)1 1000K Rads(Si)2 Units Test Conditions VGS = 0V, ID = 250µA VGS = VDS, ID = 250µA VGS = 10V VGS = -10 V VDS= 48V, VGS =0V VGS = 4.5V, ID = 0.5A VGS = 4.5V, ID = 0.5A VGS = 0V, IS = 0.8A Min 60 1.0 — — — — — — Max — 2.0 100 -100 1.0 0.55 0.55 1.2 Min 60 1.0 — — — — — — Max — 2.0 100 -100 10 0.55 0.55 1.2 V nA µA Ω Ω V 1. Part numbers IRHLUB770Z4, IRHLUB730Z4, IRHLUB740Z4 2. Part number IRHLUB780Z4 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LET (MeV/(mg/cm2)) Br I Au 37.3 59.9 82.3 Energy (MeV) 285 345 357 Range (µm) 36.8 32.7 28.5 0V 60 60 60 -2V 60 60 60 -4V 60 60 60 -5V 60 60 60 VDS (V) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= -6V 60 60 - -7V 35 20 - -8V 30 15 - -10V 20 - 70 60 50 40 30 20 10 0 0 -2 -4 -6 VGS -8 -10 -12 Br I Au For footnotes refer to the last page www.irf.com VDS Fig a. Single Event Effect, Safe Operating Area 3 IRHLUB770Z4 Pre-Irradiation 10 ID, Drain-to-Source Current (A) 1 ID, Drain-to-Source Current (A) VGS 15V 10V 5.0V 3.5V 3.0V 2.5V 2.25V BOTTOM 2.0V TOP 10 VGS 15V 10V 5.0V 3.5V 3.0V 2.5V 2.25V BOTTOM 2.0V TOP 1 0.1 2.0V 2.0V 60µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 60µs PULSE WIDTH Tj = 25°C 0.1 1 10 100 0.01 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 0.8A  ID, Drain-to-Source Current (A) 1.5 T J = 150°C 1 T J = 25°C 1.0 0.5 0.1 1.5 2 VDS = 25V 15 60µs PULSE WIDTH 2.5 3 3.5 0.0 -60 -40 -20 VGS = 4.5V  0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHLUB770Z4 250 VGS , Gate-to-Source Voltage (V) 200  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 12 ID = 0.8A  10  VDS = 48V VDS = 30V VDS = 12V C, Capacitance (pF) Ciss  8 150 C oss 100 6 4 50 2 C rss 0 1 10 100 0 0 1 2  FOR TEST CIRCUIT SEE FIGURE 13 4 5 6 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 10 ISD , Reverse Drain Current (A) ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 1 1 TJ = 150°C T J = 25°C 100µs 0.1 Tc = 25°C Tj = 150°C Single Pulse 1 10 1ms 10ms 0.1 0.4 0.6 0.8 1.0 1.2 VGS = 0V 1.4 1.6 0.01 100 1000 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHLUB770Z4 Pre-Irradiation 1.0 VDS VGS RD 0.8 D.U.T. + I D , Drain Current (A) RG -VDD 0.6 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 0.4 Fig 10a. Switching Time Test Circuit 0.2 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 0.10 0.05 10 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 1 0.1 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 1 0.0001 0.001 0.01 10  P DM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 www.irf.com Pre-Irradiation IRHLUB770Z4 4 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 3  TOP BOTTOM ID 0.4A 0.5A 0.8A VD S L D R IV E R RG D .U .T. IA S 2 + - VD D A VGS 20V tp 0 .0 1 Ω 1 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V (B R )D S S tp Starting T , Junction Temperature( ° C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 4.5V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHLUB770Z4 Pre-Irradiation Footnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L= 6.3 mH Peak IL = 0.8A, VGS = 10V ➂ ISD ≤ 0.8A, di/dt ≤ 130A/µs, VDD ≤ 60V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. 10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 48 volt VDS a