IRHLF7970Z4 (International Rectifier) - (IRHLF79x0Z4) POWER MOSFET

Part Number	IRHLF7970Z4
Manufacturer	International Rectifier
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www.DataSheet4U.com PD - 94685B RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID IRHLF7970Z4 100K Rads (Si) 1.2Ω -1.6A IRHLF7930Z4 300K Rads (Si) 1.2Ω -1.6A IRHLF7970Z4 60V, P-CHANNEL TECHNOLOGY c International Rectifier’s R7 TM Logic Level Power Mosfets provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within accptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. T0-39 Features: n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary N-Channel Available IRHLF770Z4 Absolute Maximum Ratings Parameter ID @ VGS = -4.5V, TC = 25°C ID @ VGS = -4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -1.6 -1.0 -6.4 5.0 0.04 ±10 10 -1.6 0.5 -4.0 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 (0.063in/1.6mm from case for 10s) 0.98 ( Typical ) g www.irf.com 1 04/07/04 IRHLF7970Z4 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min -60 — — -1.0 1.0 — — — — — — — — — — — — Typ Max Units — -0.06 — — — — — — — — — — — — — — 7.0 — — 1.2 -2.0 — -1.0 -10 -100 100 4.0 1.5 1.8 18 20 15 25 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, I D = -250µA Reference to 25°C, ID = -1.0mA VGS = -4.5V, ID = -1.0A ➃ VDS = VGS, ID = -250µA VDS = -10V, IDS = -1.0A ➃ VDS= -48V ,VGS=0V VDS = -48V, VGS = 0V, TJ =125°C VGS = -10V VGS =10V VGS = -4.5V, ID = -1.6A VDS = -30V VDD = -30V, ID = -1.6A, VGS =-4.5V, RG = 24Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from Drain lead (6mm /0.25in from package) to Source lead(6mm/0.25in from packge)with Source wire internally bonded from Source pin to Drain pad C iss C oss C rss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance — — — — 177 40 8.0 28 — — — — pF Ω VGS = 0V, VDS = -25V f = 1.0MHz f = 5.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -1.6 -6.4 -5.0 50 50 Test Conditions A V ns nC Tj = 25°C, IS = -1.6A, VGS = 0V ➃ Tj = 25°C, IF =-1.6A, di/dt ≤ -100A/µs VDD ≤ -25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 25 °C/W Test Conditions Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHLF7970Z4 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-39) Diode Forward Voltage ➃ 100K Rads(Si)1 Min Max -60 -1.0 — — — — — — -2.0 -100 100 -1.0 1.2 -5.0 300KRads(Si)2 Min Max -60 -1.0 — — — — — — -2.0 -100 100 -10 1.2 -5.0 Units V nA µA Ω V Test Conditions VGS = 0V, ID = -250µA VGS = VDS, ID = -250µA VGS =-10V VGS = 10 V VDS=-48V, VGS =0V VGS = -4.5V, ID =-1.0A VGS = 0V, IS = -1.6A 1. Part number IRHLF7970Z4 2. Part number IRHLF7930Z4 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LET (MeV/(mg/cm2)) Br I Au 37.9 59.9 82.3 Energy Range (MeV) 285 345 357 (µm) 36.8 32.7 28.5 0V -60 -60 -60 2V -60 -60 -60 4V -60 -60 -60 5V -60 -60 -60 VDS (V) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= 6V -60 -60 - 7V -50 -20 - 8V -35 - 10V -25 - -70 -60 -50 -40 -30 -20 -10 0 0 2 4 6 VGS 8 10 12 Br I Au For footnotes refer to the last page www.irf.com VDS Fig a. Single Event Effect, Safe Operating Area 3 IRHLF7970Z4 Pre-Irradiation 10 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS TOP -10V -7.5V -5.0V -4.0V -3.5V -3.0V -2.5V BOTTOM -2.25V 10 VGS -10V -7.5V -5.0V -4.0V -3.5V -3.0V -2.5V BOTTOM -2.25V TOP 1 -2.25V 1 -2.25V 60µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) 60µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2.0 T J = 150°C RDS(on) , Drain-to-Source On Resistance (Normalized) T J = 25°C ID = -1.6A -I D , Drain-to-Source Current ( Α) 1.5 1 1.0 0.5 VDS = -25V 15 60µs PULSE WIDTH 0.1 1 2 3 4 5 6 7 8 -V GS, Gate-to-Source Voltage (V) 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHLF7970Z4 250 -VGS , Gate-to-Source Voltage (V) 200 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 12 ID = -1.6A 10 VDS = -48V VDS = -30V VDS = -12V C, Capacitance (pF) Ciss 8 150 6 100 C oss 50 4 2 C rss 0 1 10 100 0 0 1 2 FOR TEST CIRCUIT SEE FIGURE 13 3 4 5 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 10 OPERATION IN THIS AREA LIMITED BY RDS(on) -I SD , Reverse Drain Current ( Α) T J = 150°C T J = 25°C -I D , Drain-to-Source Current (A) 100µs 1 1 1ms Tc = 25°C Tj = 150°C Single Pulse 1 10 10ms 100 1000 0.1 0 1 2 3 4 VGS = 0V 5 6 7 0.1 -VSD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHLF7970Z4 Pre-Irradiation 1.6 VDS VGS RD 1.3 D.U.T. + -I D , Drain Current (A) 1.0 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 0.6 Fig 10a. Switching Time Test Circuit 0.3 VGS 10% td(on) tr t d(off) tf 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJC) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1 PDM t1 t2 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com - RG V DD Pre-Irradiation IRHLF7970Z4 VDS L 25 EAS , Single Pulse Avalanche Energy (mJ) RG D .U .T IA S D R IV E R 0 .0 1 Ω + VD D V DD A 20 ID -0.7A -1.0A BOTTOM -1.6A TOP VGS -2 0 V tp 15 15V 10 5 Fig 12a. Unclamped Inductive Test Circuit IAS 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ -12V 12V .2µF .3µF -4.5V QGS VG QGD VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com + D.U.T. - VDS 7 IRHLF7970Z4 Pre-Irradiation Footnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = - 25V, starting TJ = 25°C, L= 8.0mH Peak IL = -1.6A, VGS = -10V ➂ I SD ≤ -1.6A, di/dt ≤ -170A/µs, VDD ≤ - 60V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. -10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradi