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PD-97062
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level RDS(on) IRHLF77110 100K Rads (Si) 0.30Ω IRHLF73110 300K Rads (Si) 0.30Ω ID 6.0A 6.0A
IRHLF77110 100V, N-CHANNEL
TECHNOLOGY
T0-39
International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.
Features:
n n n n n n n n
5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC=25°C ID @ VGS = 4.5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 6.0 3.7 24 23 0.18 ±10 43 6.0 2.3 4.9 -55 to 150
Pre-Irradiation
Units A
W
W/°C
V mJ A mJ V/ns
°C
300 (0.063in/1.6mm from case for 10s) 0.98 (Typical)
g
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1
12/27/06
IRHLF77110
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
100 — — 1.0 — 3.0 — — — — — — — — — — — —
Typ Max Units
— 0.10 — — -5.7 — — — — — — — — — — — — 7.0 — — 0.30 2.0 — — 1.0 10 100 -100 9.0 3.2 4.8 12 83 34 8.0 — V V/°C Ω V mV/°C S µA nA nC ns
Test Conditions
VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 4.5V, ID = 3.7A VDS = VGS, ID = 250µA VDS = 10V, IDS = 3.7A Ã VDS= 80V ,VGS= 0V VDS = 80V, VGS = 0V, TJ =125°C VGS = 10V VGS = -10V VGS = 4.5V, ID = 6.0A VDS = 50V VDD = 50V, ID = 6.0A, VGS = 5.0V, RG = 7.5Ω Ã
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nH
Measured from Drain lead (6mm /0.25in from pack.) to Source lead (6mm/0.25in from pack.)with Source wire internally bonded from Source pin to Drain pad
C iss C oss C rss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
— — — —
577 117 1.6 6.6
— — — —
pF Ω
VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
— — — — — — — — — — 6.0 24 1.2 260 904
Test Conditions
A
V ns nC Tj = 25°C, IS = 6.0A, VGS = 0V Ã Tj = 25°C, IF = 6.0A, di/dt ≤ 100A/µs VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
— — 5.5
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHLF77110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Diode Forward Voltage Up to 300K Rads(Si)1
Min
100 1.0 — — — — —
Max
Units
V nA µA Ω V
Test Conditions
VGS = 0V, ID = 250µA VGS = VDS, ID = 250µA VGS = 10V VGS = -10V VDS= 80V, VGS= 0V VGS = 4.5V, ID = 3.7A VGS = 0V, ID = 6.0A
— 2.0 100 -100 1.0 0.30 1.2
1. Part numbers IRHLF77110, IRHLF73110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
(MeV/(mg/cm )) Br I Au 37 60 84
2
Energy
(MeV) 305 370 390
Range
(µm) 39 34 30 0V 100 100 100 -1V 100 100 100 -2V 100 100 100 -4V 100 100 100
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
-5V 100 100 100
-6V 100 100 -
-7V 100 -
-8V 100 -
120 100 80 60 40 20 0 0 -1 -2 -3 -4 VGS -5 -6 -7 -8
Br I Au
VDS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHLF77110
Pre-Irradiation
100
VGS TOP 10V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V BOTTOM 2.5V
100
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
VGS 10V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V BOTTOM 2.5V TOP
1 2.5V 20µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V)
1
2.5V
20µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 6.0A
2.0
ID, Drain-to-Source Current (A)
10
T J = 150°C
1.5
T J = 25°C 1
1.0
0.5
0 2 3 4
VDS = 50V 15 20µs PULSE WIDTH 5 6 7 8
VGS = 4.5V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHLF77110
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
130
2.5
VGS(th) Gate threshold Voltage (V)
ID = 1.0mA
2.0
120
1.5
1.0
110
0.5
ID ID ID ID
= 50µA = 250µA = 1.0mA = 150mA
100 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 5. Typical Drain-to-Source Breakdown Voltage Vs Temperature
Fig 6. Typical Threshold Voltage Vs Temperature
1600 1400 1200
VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C oss = C ds + C gd
12 ID = 6.0A
VGS, Gate-to-Source Voltage (V)
C rss = C gd
10 8 6 4 2 0
VDS = 80V VDS = 50V VDS = 20V
C, Capacitance (pF)
1000 800 600 400 200 0 1 10 100
Ciss Coss
Crss
FOR TEST CIRCUIT SEE FIGURE 15 0 2 4 6 8 10 12 14 16 18 20
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 7. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 8. Typical Gate Charge Vs. Gate-to-Source Voltage
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IRHLF77110
Pre-Irradiation
6 5
ID, Drain Current (A)
100 OPERATION IN THIS AREA LIMITED BY R DS(on)
4 3 2 1 0 25 50 75 100 125 150 T C , Case Temperature (°C)
ID, Drain-to-Source Current (A)
10 100µs 1 Tc = 25°C Tj = 150°C Single Pulse 1 10 100 1ms 10ms
0.1
1000
VDS , Drain-to-Source Voltage (V)
Fig 9. Maximum Drain Current Vs. Case Temperature
10
Fig 10. Maximum Safe Operating Area
Thermal Response ( Z thJC )
D = 0.50
1
0.20 0.10 0.05 0.02 SINGLE PULSE ( THERMAL RESPONSE )
P DM t1 t2
0.1
0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHLF77110
100
100
EAS , Single Pulse Avalanche Energy (mJ)
ISD, Reverse Drain Current (A)
TOP
80
10 T J = 150°C
T J = 25°C
BOTTOM
60
ID 2.7A 3.8A 6.0A
40
1
20
VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 2.5 VSD , Source-to-Drain Voltage (V)
0 25 50 75 100 125 150
Starting T J , Junction Temperature (°C)
Fig 12. Typical Source-to-Drain Diode Forward Voltage
Fig 13a Maximum Avalanche Energy Vs. Drain Current
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
. D.U.T
IAS tp
+ V - DD
A
0.01Ω
I AS
Fig 13c. Unclamped Inductive Waveforms
Fig 13b. Unclamped Inductive Test Circuit
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IRHLF77110
Pre-Irradiation
VDS VGS RG V GS
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
RD
VDS 90%
D.U.T.
VDD
+
-
10% VGS
td(on) tr t d(off) tf
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
Current Regulator Same Type as D.U.T.
4.5V
QG QGS QGD
50KΩ 12V .2µF .3µF
D.U.T. VGS
3mA
+ V - DS
VG
Charge
Fig 15a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 15b. Gate Charge Test Circuit
8
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Pre-Irradiation
IRHLF77110
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L= 2.4 mH Peak IL = 6.0A, VGS = 10V Â ISD ≤ 6.0A, di/dt ≤ 190A/µs, VDD ≤ 100V, TJ
