INSULATED GATE BIPOLAR TRANSISTOR

PD -95185 IRG4PC50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package • Lead-Free C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A n-ch an nel Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 55 27 220 220 25 220 ± 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ------------------------- Typ. ----------0.24 ----6 (0.21) Max. 0.64 0.83 -----40 ------ Units °C/W g (oz) www.irf.com 1 04/23/04 IRG4PC50UDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown VoltageS 600 ---- ---V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.60 ---- V/°C VGE = 0V, IC = 1.0mA Collector-to-Emitter Saturation Voltage ---- 1.65 2.0 IC = 27A VGE = 15V VCE(on) ---- 2.0 ---V IC = 55A See Fig. 2, 5 ---- 1.6 ---IC = 27A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆T J Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA Forward Transconductance T 16 24 ---S VCE = 100V, IC = 27A gfe ICES Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V ---- ---- 6500 VGE = 0V, VCE = 600V, TJ = 150°C V FM Diode Forward Voltage Drop ---- 1.3 1.7 V IC = 25A See Fig. 13 ---- 1.2 1.5 IC = 25A, TJ = 150°C Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V IGES V(BR)CES Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Min. ---------------------------------------------------------------Diode Peak Reverse Recovery Current ------Diode Reverse Recovery Charge ------Diode Peak Rate of Fall of Recovery ---During tb ---Typ. 180 25 61 46 25 140 74 0.99 0.59 1.58 44 27 240 130 2.3 13 4000 250 52 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 270 IC = 27A 38 nC VCC = 400V See Fig. 8 90 VGE = 15V ---TJ = 25°C ---ns IC = 27A, VCC = 480V 230 VGE = 15V, RG = 5.0Ω 110 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 1.9 ---TJ = 150°C, See Fig. 9, 10, 11, 18 ---ns IC = 27A, VCC = 480V ---VGE = 15V, RG = 5.0Ω ---Energy losses include "tail" and ---mJ diode reverse recovery. ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 ---ƒ = 1.0MHz 75 ns TJ = 25°C See Fig. 160 TJ = 125°C 14 IF = 25A 10 A TJ = 25°C See Fig. 15 TJ = 125°C 15 VR = 200V 375 nC TJ = 25°C See Fig. 1200 TJ = 125°C 16 di/dt 200A/µs ---- A/µs TJ = 25°C ---TJ = 125°C Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M /dt 2 www.irf.com IRG4PC50UDPbF 40 D u ty c ycl e: 5 0% T J = 1 25 °C T sin k = 90 °C Ga te d rive a s spe cifi ed Tu rn -on lo sses inclu de effe cts o f reve rse re cov ery P o w e r D issipa tion = 4 0 W 6 0 % o f rate d v o lta g e 30 Loa d C urre nt (A) 20 10 0 0.1 1 10 A 100 f, Freq uen cy (kH z) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C , C o lle ctor-to-E m itter Cu rre n t (A ) 1000 1000 100 I C , C ollec to r-to-Em itte r C u rre nt (A) 100 10 T J = 1 5 0 °C TJ = 1 5 0°C T J = 2 5 °C 1 10 T J = 2 5 °C 0.1 0 1 VGE = 15V 2 0 µ s P U L S E W ID T H A 10 1 4 6 8 VC C = 1 0 V 5 µ s P U LS E W ID TH A 10 12 VC E , C o lle c to r-to -E m itte r V o lta g e (V ) VG E , G a te -to -E m itte r V o lta g e (V ) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4PC50UDPbF 60 50 V C E , C ollec to r-to-Em itter V oltage (V) V G E = 15 V 2.5 M axim um DC C ollector C urrent (A) V G E = 1 5V 8 0 µs P U L S E W ID TH IC = 5 4 A 40 2.0 30 IC = 2 7 A 1.5 20 IC = 14 A 10 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 A 140 160 T C , C ase Tem perature (°C) T J , Ju n c tio n Te m p e ra tu re (°C ) Fig. 4 - Maximum Collector Current vs. Temperature Case Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 T h e rm a l R e s p o n s e (Z thJC ) D = 0 .5 0 0 .2 0 0 .1 0 .1 0 0 .0 5 0 .0 2 0 .0 1 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) N ote s : 1 . D u ty f ac t or D = t 1 / t2 PD M t 1 t 2 0 .0 1 0 .0 0 0 0 1 2 . P e a k TJ = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R e c ta n g u la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC50UDPbF 8000 20 V G E , Gate-to-Emitter Voltage (V) V GE C ie s C re s C oes = = = = 0V , f = 1M Hz C ge + C gc , C ce SH O R TED C gc C ce + C gc VC E = 400V I C = 27A 16 C, Capacitance (pF) 6000 C ie s 12 4000 C oes 2000 8 C res 4 0 1 10 A 100 0 0 40 80 120 160 A 200 V C E , C o lle c to r-to -E m itte r V o lta g e (V ) Q g , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.0 T ota l S w itching Loss es (m J) 2.5 Total Switching Losses (mJ) VCC VGE TJ IC = 480V = 15V = 2 5 °C = 27A 10 I C = 54A I C = 27A 1 2.0 I C = 14A 1.5 1.0 0 10 20 30 40 50 A 60 0.1 RG = 5.0 Ω VG E = 15V VC C = 480V -60 -40 -20 0 20 40 60 80 100 120 140 A 160 R G , G a te R e s is ta n c e ( Ω) TJ , Junction Temperature (°C) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC50UDPbF 8.0 6.0 I C , Collector-to-E m itter C urrent (A) Total S w itc hing Loss es (m J) RG TJ V CC V GE = 5 .0 Ω = 1 5 0 °C = 480V = 15V 1000 VG E E 2 0V G= T J = 125 °C 100 S A FE O P E R A TIN G A R E A 4.0 10 2.0 0.0 0 10 20 30 40 50 60 A 1 1 10 100 1000 I C , C o lle c to r-to-E m itte r C u rre n t (A ) V C E , Collecto r-to-E m itter V oltage (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 100 In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A ) TJ = 1 50 °C TJ = 1 25 °C 10 TJ = 25 °C 1 0.6 1.0 1.4 1.8 2.2 2.6 F o rw a rd V o lta g e D ro p - V F M (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PC50UDPbF 140 100 120 VR = 2 0 0 V TJ = 125°C TJ = 25°C VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 100 I IR R M - (A ) I F = 5 0A I F = 2 5A 10 t rr - (ns) 80 I F = 50A I F = 25A 60 IF = 10A I F = 10 A 40 20 100 di f /dt - (A/µs) 1000 1 100 d i f /d t - (A /µ s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 1500 10000 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 1200 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 900 I F = 5 0A d i(rec)M /d t - (A /µs) Q R R - (n C ) 1000 I F = 10 A 600 I F = 2 5A I F = 25 A 300 I F = 1 0A 0 100 I F = 5 0A 1000 100 100 d i f /d t - (A /µ s ) di f /dt - (A /µs) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PC50UDPbF 90% Vge +Vge Same ty pe device as D .U.T. Vce Ic 80% of Vce 430µF D .U .T. 10% Vce 9 0 % Ic Ic 5 % Ic td (o ff) tf Eoff = ∫ t1 + 5 µ S V c e ic d t t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg Ic trr Q rr = ∫ trr id d t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k V pk 1 0 % Irr V cc Irr Ic D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 E o n = V ce ie d t t1 ∫ E re c = D IO D E R E V E R S E REC OVERY ENER GY t3 t4 t1 t2 ∫ t4 V d id d t t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4PC50UDPbF V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V