INSULATED GATE BIPOLAR TRANSISTOR

PD 91460B IRG4PC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package C Fast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-cha nn el Benefits • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 31 17 120 120 12 120 ± 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. ––– ––– 0.24 ––– 6 (0.21) Max. 1.2 2.5 ––– 40 ––– Units °C/W g (oz) www.irf.com 1 12/30/00 IRG4PC30FD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Collector-to-Emitter Breakdown VoltageS 600 Temperature Coeff. of Breakdown Voltage ––– Collector-to-Emitter Saturation Voltage ––– ––– ––– Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage ––– Forward Transconductance T 6.1 Zero Gate Voltage Collector Current ––– ––– Diode Forward Voltage Drop ––– ––– Gate-to-Emitter Leakage Current ––– Typ. Max. Units ––– ––– V 0.69 ––– V/°C 1.59 1.8 1.99 ––– V 1.70 ––– ––– 6.0 -11 ––– mV/°C 10 ––– S ––– 250 µA ––– 2500 1.4 1.7 V 1.3 1.6 ––– ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0mA IC = 17A VGE = 15V IC = 31A See Fig. 2, 5 IC = 17A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 250µA VCE = 100V, IC = 17A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C IC = 12A See Fig. 13 IC = 12A, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. 51 7.9 19 42 26 230 160 0.63 1.39 2.02 42 27 310 310 3.2 13 1100 74 14 42 80 3.5 5.6 80 220 180 120 Max. Units Conditions 77 IC = 17A 12 nC VCC = 400V See Fig. 8 28 VGE = 15V ––– TJ = 25°C ––– ns IC = 17A, VCC = 480V 350 VGE = 15V, RG = 23Ω 230 Energy losses include "tail" and ––– diode reverse recovery. ––– mJ See Fig. 9, 10, 11, 18 3.9 ––– TJ = 150°C, See Fig. 9, 10, 11, 18 ––– ns IC = 17A, VCC = 480V ––– VGE = 15V, RG = 23Ω ––– Energy losses include "tail" and ––– mJ diode reverse recovery. ––– nH Measured 5mm from package ––– VGE = 0V ––– pF VCC = 30V See Fig. 7 ––– ƒ = 1.0MHz 60 TJ = 25°C See Fig. ns 120 TJ = 125°C 14 IF = 12A 6.0 A TJ = 25°C See Fig. 10 TJ = 125°C 15 VR = 200V 180 TJ = 25°C See Fig. nC 600 TJ = 125°C 16 di/dt 200A/µs ––– TJ = 25°C See Fig. A/µs ––– TJ = 125°C 17 2 www.irf.com IRG4PC30FD 25 20 Load Current ( A ) D uty cy cle: 50 % T J = 12 5° C T s ink = 90 °C G a te d riv e a s sp ec ified T urn-on los se s inc lude e ffe cts o f re ve rse re co ve ry P ow e r D issip ation = 24W 15 6 0 % o f ra te d v o lta g e 10 5 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) 100 TJ = 25°C I C , Collector-to-Emitter Current (A) 100 T J = 150°C TJ = 150°C T J = 25°C 10 10 1 1 V G E = 15V 20µs PULSE WIDTH 10 A 1 5 6 7 8 9 V C C = 50V 5µs PULSE WIDTH A 10 11 12 13 VC E , Collector-to-Emitter Voltage (V) VG E , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4PC30FD 40 V G E = 15 V 2.5 V G E = 15V 80µs PULSE WIDTH I C = 34A M axim um D C C ollector C urrent (A) 30 V C E , Collector-to-Emitter Voltage (V) 2.0 20 I C = 17A 1.5 10 I C = 8.5A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 T C , C ase Tem perature (°C) T J , Junction Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 T he rm al R es po ns e (Z th JC ) 1 D = 0 .5 0 0 .2 0 0 .1 0 PD M 0 .1 0 .0 5 0 .0 2 0 .0 1 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) t 1 t2 N o te s : 1 . D u ty fa c to r D = t 1 /t 2 0 .0 1 0 .0 0 0 0 1 2 . P e a k T J = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC30FD 2000 VGE = 0V f = 1 MHz 20 1600 Coes = Cce + Cgc V G E , Gate-to-Emitter Voltage (V) A Cies = Cge + Cgc + Cce Cres = Cce SHORTED VC E = 400V I C = 17A 16 C, Capacitance (pF) 1200 C ies 12 800 8 C oes 400 4 C res 0 1 10 0 0 10 20 30 40 50 A 60 100 V C E , Collector-to-Emitter Voltage (V) Q g , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 2.20 Total Switchig Losses (mJ) 2.10 Total Switchig Losses (mJ) VC C VG E TJ IC = 480V = 15V = 25°C = 17A 10 I C = 34A I C = 17A 1 2.00 I C = 8.5A 1.90 1.80 0 20 40 60 A 80 0.1 R G = 23 Ω V G E = 15V V C C = 480V -60 -40 -20 0 20 40 60 80 100 120 140 A 160 R G, Gate Resistance ( Ω) TJ , Junction Temperature (°C) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC30FD 8.0 6.0 I C , C o lle c to r-to -E m itte r C u rre n t (A ) Total Switchig Losses (mJ) RG TJ V CC V GE = = = = 23 Ω 150°C 480V 15V 1000 VG E E 20 V G= T J = 125 °C 100 S A FE O P E R A TIN G A R E A 4.0 10 2.0 0.0 0 10 20 30 40 A 1 1 10 100 1000 I C , Collector-to-Emitter Current (A) V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A ) TJ = 1 50 °C 10 TJ = 1 25 °C TJ = 25 °C 1 0.4 0.8 1.2 1.6 2.0 2.4 F o rw a rd V o lta g e D ro p - V F M (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PC30FD 160 100 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 120 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C I F = 24 A I F = 1 2A 80 I IR R M - (A ) I F = 24 A 10 t rr - (ns) I F = 12 A I F = 6.0 A I F = 6 .0 A 40 0 100 d i f /d t - (A /µ s) 1000 1 100 1000 d i f /d t - (A /µ s ) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 600 10000 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 400 d i(re c )M /d t - (A /µ s) 1000 Q R R - (n C ) IF = 6.0 A I F = 2 4A I F = 1 2A I F = 12 A 100 200 I F = 6.0 A I F = 2 4A 0 100 d i f /d t - (A /µ s) 1000 10 100 1000 d i f /d t - (A /µ s) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PC30FD 90% Vge +Vge Same ty pe device as D .U.T. Vce Ic 80% of Vce 430µF D .U .T. 10% Vce Ic 9 0 % Ic 5 % Ic td (o ff) tf Eoff = ∫ t1 + 5 µ S V c e ic d t t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ trr id d t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 E o n = V ce ie d t t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = ∫ t4 V d id d t t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eo