HEXFET Power MOSFET

PD - 91455B IRG4BC40S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.32V @VGE = 15V, IC = 31A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 60 31 120 120 ± 20 15 160 65 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf•in (1.1N•m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. ––– 0.50 ––– 2.0 (0.07) Max. 0.77 ––– 80 ––– Units °C/W g (oz) www.irf.com 1 4/17/2000 IRG4BC40S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage T 18 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.75 — 1.32 VCE(ON) Collector-to-Emitter Saturation Voltage — 1.68 — 1.32 VGE(th) Gate Threshold Voltage 3.0 — ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -9.3 gfe Forward Transconductance U 12 21 — — ICES Zero Gate Voltage Collector Current — — — — IGES Gate-to-Emitter Leakage Current — — V(BR)CES V(BR)ECS Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1.0mA VGE = 15V 1.5 IC = 31A — IC = 60A See Fig.2, 5 V — IC = 31A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 31A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. 100 14 34 22 18 650 380 0.45 6.5 6.95 23 21 1000 940 12 7.5 2200 140 26 Max. Units Conditions 150 IC = 31A 21 nC VCC = 400V See Fig. 8 51 VGE = 15V — — TJ = 25°C ns 980 IC = 31A, VCC = 480V 570 VGE = 15V, RG = 10Ω — Energy losses include "tail" — mJ See Fig. 10, 11, 13, 14 9.9 — TJ = 150°C, — IC = 31A, VCC = 480V ns — VGE = 15V, RG = 10Ω — Energy losses include "tail" — mJ See Fig. 13, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω, (See fig. 13a) S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC40S 70 F o r b o th : 60 T ria n g u la r w a ve : I D uty c yc le: 50% T J = 125°C T s ink = 90°C G ate driv e as spec ified P o w e r D is s ip a tio n = 2 8 W Load Current ( A ) 50 C la m p vo l ta g e : 8 0 % o f ra te d 40 S q u a re wave : 6 0 % o f ra te d vo l ta g e I 30 20 10 Id e a l d io de s 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 1000 IC , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 100 100 T J = 150°C TJ = 25°C 10 TJ = 25°C 10 TJ = 150°C 1 0.1 1 V G E = 15V 20µs PULSE WIDTH 10 A 1 5 6 7 V C C = 50V 5µs PULSE WIDTH A 8 9 10 VC E , Collector-to-Emitter Voltage (V) VG E , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BC40S 60 V C E , C ollec to r-to -E m itte r V oltage (V ) V G E = 15V 2.0 Maximum DC Collector Current (A) VGE = 15V 8 0 µ s P U L S E W ID T H I C = 62A 50 40 30 1.5 20 I C = 31A 10 I C = 16A 1.0 -60 -40 -20 0 20 40 60 80 0 25 50 75 100 125 A 150 A 100 120 140 160 TC , Case Temperature (°C) T J , Ju n c tio n T e m p e ra tu re (°C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 1 Therm al Response (Z th JC ) D = 0 .5 0 0.2 0 0 .1 0.1 0 0 .05 SIN G LE P UL SE (T H ER M A L R E SP O NS E ) N o te s: 1 . D u ty fa c to r D = t 1 / t2 PD M t 1 t2 0.0 2 0.0 1 0 .0 1 0 .0 0 0 0 1 2 . P e a k TJ = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R ectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC40S 4000 V GE , G a te -to -E m itter V oltage (V ) A V GE = C ie s = C re s = C oes = 0V , f = 1M H z C ge + C gc , Cc e S H O R T E D C gc C ce + C g c 20 VC E = 4 0 0 V IC = 31A 16 C , C a pa cita nce (pF ) 3000 C ie s 12 2000 8 C o es 1000 C res 0 1 10 4 0 0 20 40 60 80 100 A 120 100 V C E , C ollector-to-Em itter Vo ltag e (V) Q g , Total G a te C ha rge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 7.8 T o ta l S w itching L oss es (m J) 7.7 T otal Sw itc hing Lo sse s (m J) V CC VGE TJ IC = 480V = 15V = 25 °C = 31A 100 R G = 10 Ω V G E = 1 5V V C C = 4 80 V I C = 62A 7.6 I C = 31A 10 7.5 IC = 16A 7.4 7.3 0 10 20 30 40 50 A 60 1 -60 -40 -20 0 20 40 60 80 100 120 140 A 160 R G , G ate R esistan ce (Ω) TJ , Ju nctio n Te m p erature (°C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC40S 30 I C , C ollecto r-to -Em itter Cu rrent (A) Total Switching Losses (mJ) RG TJ V CC V GE = = = = 10 Ω 150°C 480V 15V 1000 VG E E 2 0V G= T J = 12 5 °C 20 100 S A FE O P E R A TIN G A R E A 10 10 0 0 10 20 30 40 50 60 70 A 1 1 10 100 1000 I C , Collector-to-Emitter Current (A) V C E , Collecto r-to-E m itter V oltage (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4BC40S L 50V 1 00 0V VC * D .U .T. RL = 0 - 480V 480V 4 X IC@25°C 480µF 960V R Q * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 9 0% S 1 0% 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10 % IC 5% t d (o n ) tr E on E ts = ( Eo n +E o ff ) tf t=5µ s E o ff www.irf.com 7 IRG4BC40S Case Outline and Dimensions — TO-220AB 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 1 0 .5 4 (.41 5 ) 1 0 .2 9 (.40 5 ) 3.78 (.149) 3.54 (.139) -A6.47 (.255 ) 6.10 (.240 ) 1.15 (.045) M IN -B - 4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 2 3 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 2 0 A B . 3X 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 3.96 (.160) 3.55 (.140) LEAD 1234- A S S IG N M E N T S GA TE C O L LE C T O R E M IT T E R C O L LE C T O R 4.06 (.160 ) 3.55 (.140 ) 0.93 (.037) 0.69 (.027) M B A M 1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) 2 .5 4 (.1 0 0) 2X 3X 3X 0.55 (.022) 0.46 (.018) 0 .3 6 (.01 4 ) 2.92 (.115) 2.64 (.104) CONFORMS TO JEDEC OUTLINE TO-220AB D im e ns io ns in M illim e ters a nd (In c he s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 8 www.irf.com