HEXFET Power MOSFET

PD -95674 IRG4BC30KD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-channel Benefits • Latest generation 4 IGBTs offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristic reduce noise, EMI and switching losses • This part replaces the IRGBC30KD2-S and IRGBC30MD2-S products • For hints see design tip 97003 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. D 2 Pak Max. 600 28 16 58 58 12 58 10 ± 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A µs V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, Flat, Greased Surface Junction-to-Ambient ( PCB Mounted,steady-state)… Weight Typ. ––– 0.5 ––– 1.44 Max. 1.2 2.5 ––– 40 ––– Units °C/W g www.irf.com 1 8/11/04 IRG4BC30KD-SPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltageƒ 600 — — V Temperature Coeff. of Breakdown Voltage — 0.54 — V/°C Collector-to-Emitter Saturation Voltage — 2.21 2.7 — 2.88 — V — 2.36 — Gate Threshold Voltage 3.0 — 6.0 Temperature Coeff. of Threshold Voltage — -12 — mV/°C Forward Transconductance „ 5.4 8.1 — S Zero Gate Voltage Collector Current — — 250 µA — — 2500 Diode Forward Voltage Drop — 1.4 1.7 V — 1.3 1.6 Gate-to-Emitter Leakage Current — — ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0mA IC = 16A VGE = 15V See Fig. 2, 5 IC = 28A IC = 16A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 250µA VCE = 100V, IC = 16A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C IC = 12A See Fig. 13 IC = 12A, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc t d(on) tr td(off) tf Eon Eoff Ets tsc t d(on) tr t d(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — 10 — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 67 100 IC = 16A 11 16 nC VCC = 400V See Fig.8 25 37 VGE = 15V 60 — 42 — TJ = 25°C ns 160 250 IC = 16A, VCC = 480V 80 120 VGE = 15V, RG = 23Ω 0.60 — Energy losses include "tail" 0.58 — mJ and diode reverse recovery 1.18 1.6 See Fig. 9,10,14 — — µs VCC = 360V, TJ = 125°C VGE = 15V, RG = 10Ω , VCPK < 500V 58 — TJ = 150°C, See Fig. 11,14 42 — IC = 16A, VCC = 480V ns 210 — VGE = 15V, RG = 23Ω 160 — Energy losses include "tail" 1.69 — mJ and diode reverse recovery 7.5 — nH Measured 5mm from package 920 — VGE = 0V 110 — pF VCC = 30V See Fig. 7 27 — ƒ = 1.0MHz 42 60 TJ = 25°C See Fig. ns 80 120 TJ = 125°C 14 IF = 12A 3.5 6.0 TJ = 25°C See Fig. A 5.6 10 TJ = 125°C 15 VR = 200V 80 180 TJ = 25°C See Fig. nC 220 600 TJ = 125°C 16 di/dt = 200Aµs 180 — TJ = 25°C See Fig. A/µs 160 — TJ = 125°C 17 2 www.irf.com IRG4BC30KD-SPbF 2.5 For both: 2.0 LOAD CURRENT (A) Duty cycle: 50% TJ = 125°C 55°C Tsink = 90°C Gate drive as specified Power Dissipation = 1.8 W Square wave: 60% of rated voltage 1.5 1.0 I 0.5 Ideal diodes 0.0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) TJ = 150 o C 10 I C , Collector-to-Emitter Current (A) TJ = 25 o C TJ = 150 o C 10 TJ = 25 oC 1 1 0.1 V GE = 15V 20µs PULSE WIDTH 1 10 0.1 V CC = 50V 5µs PULSE WIDTH 5 10 15 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BC30KD-SPbF 30 4.0 25 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 32 A Maximum DC Collector Current(A) 20 3.0 15 IC = 16 A 2.0 10 IC = 8.0A 8A 5 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( ° C) , Junction Temperature ( C) TTJ Junction Temperature ( °C°) J, Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30KD-SPbF 1500 1200 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 16A 16 C, Capacitance (pF) 900 Cies 12 600 8 300 Coes Cres 4 0 1 10 0 VCE , Collector-to-Emitter Voltage (V) 0 20 40 60 80 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.50 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 ° C 1.40 I C = 16A 10 RG = Ohm 23Ω VGE = 15V VCC = 480V IC = 32 A 1.30 IC = 16 A 1 IC = 8.0A 8A 1.20 1.10 1.00 0 R Gate Resistance Ω ) RG G, ,Gate Resistance ((Ohm) 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC30KD-SPbF 5.0 3.0 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC 4.0 VGE = 23Ω Ohm = 150 ° C = 480V = 15V 100 VGE = 20V 125°C T J = 125 oC 10 2.0 1.0 0.0 0 8 16 24 32 40 1 SAFE OPERATING AREA 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) TJ = 150°C 10 TJ = 125°C TJ = 25°C 1 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC30KD-SPbF 160 100 VR = 200V TJ = 125°C TJ = 25°C 120 VR = 200V TJ = 125°C TJ = 25°C I F = 24A I F = 12A 80 I IRRM - (A) I F = 24A 10 t rr - (ns) I F = 12A IF = 6.0A I F = 6.0A 40 0 100 di f /dt - (A/µs) 1000 1 100 di f /dt - (A/µs) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 600 Fig. 15 - Typical Recovery Current vs. dif/dt 10000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 400 di(rec)M/dt - (A/µs) 1000 Q RR - (nC) IF = 6.0A I F = 24A 200 I F = 12A I F = 12A 100 IF = 6.0A IF = 24A 0 100 di f /dt - (A/µs) 1000 10 100 di f /dt - (A/µs) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4BC30KD-SPbF Same type device as D.U.T. 80% of Vce 430µF D.U.T. 90% Vge V C 10% 90% td(off) ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 18a - Test Circuit for Measurement of 10% IC 5% t d(on) tr tf t=5µs Eon Ets= (E +Eoff ) on Eoff Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg Ic trr Qrr = ∫ trr id dt Ic dt tx tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk 10% Irr Vcc Vpk Irr Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Vce Ic Eon = Vce ie dtdt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 ∫ t4 Erec = Vd idIc dt Vd dt t3 t1 ∫ t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC30KD-SPbF Dimensions are shown in millimeters (inches) D2Pak Package Outline D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L O T CO D E 8 0 2 4 AS S E M B L E D O N W W 0 2 , 2 0 0 0 IN T H E AS S E M B L Y L IN E "L " N ote: "P " in as s em bly lin e po s i tion in dicates "L ead-F r ee" IN T E R N AT IO N AL R E CT IF IE R L O GO AS S E M B L Y L O T CO D E P AR T N U M B E R F 53 0 S D AT E CO D E Y E AR 0 = 2 0 0 0 W E E K 02 L IN E L OR IN T E R N AT IO N AL R E C T IF IE R L O GO AS S E M B L Y L OT C