INSULATED GATE BIPOLAR TRANSISTOR

www.DataSheet4U.com PD - 96929 IRG4BC30FD-S INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C Fast CoPack IGBT VCES = 600V Features • Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations. G E VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available. • IGBT's optimized for specific application conditions. • HEXFRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing. • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's. D2Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current Max. 600 31 17 120 120 12 120 ±20 100 42 -55 to +150 Units V A d c Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Operating Junction and Storage Temperature Range V W °C PD @ TC = 100°C Maximum Power Dissipation Thermal / Mechanical Characteristics Parameter RθJC RθCS RθJA Wt Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Weight Junction-to-Ambient (PCB Mounted,steady state) Min. ––– ––– ––– ––– Typ. ––– 0.50 ––– 2.0 (0.07) Max. 1.2 ––– 40 ––– Units °C/W g g (oz.) www.irf.com 1 12/02/04 IRG4BC30FD-S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES Collector-to-Emitter Breakdown Voltage ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage e Min. Typ. Max. Units 600 — — — — 3.0 — 0.69 1.59 1.99 1.7 — -11 10 — — 1.4 1.3 — — — 1.8 — — 6.0 — — 250 2500 1.7 1.6 ±100 nA V V V Conditions VGE = 0V, IC = 250µA VGE = 15V See Fig. 2, 5 V/°C VGE = 0V, IC = 1mA IC = 17A V IC = 31A IC = 17A, TJ = 150°C VCE = VGE, IC = 250µA mV/°C VCE = VGE, IC = 250µA S VCE = 100V, IC = 17A µA VGE = 0V, VCE = 600V VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Collector-to-Emitter Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current f — 6.1 — — — — — VGE = 0V, VCE = 600V, TJ = 150°C IF = 12A IF = 12A, TJ = 150°C VGE = ±20V See Fig. 13 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. Typ. Max. Units — — — — — — — — — — — — — — — — — — — — — — — — — — 51 7.9 19 42 26 230 160 0.63 1.39 2.02 42 27 310 310 3.2 7.5 1100 74 14 42 80 3.5 5.6 80 220 180 120 77 12 28 — — 350 230 — — 3.9 — — — — — — — — — 60 120 6.0 10 180 600 — — nC A ns pF mJ nH ns TJ = 150°C mJ ns nC IC = 17A VCC = 400V VGE = 15V TJ = 25°C Conditions See Fig. 8 IC = 17A, VCC = 480V VGE = 15V, RG = 23Ω Energy losses inlcude "tail" and diode reverse recovery. See Fig. 9, 10, 11, 18 See Fig. 9,10,11,18 IC = 17A, VCC = 480V VGE = 15V, RG = 23Ω Energy losses inlcude "tail" and diode reverse recovery. Measured 5mm from package VGE = 0V VCC = 30V f = 1.0MHz TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C See Fig. 14 See Fig. 15 See Fig. 16 See Fig. 17 di/dt 200A/µs VR = 200V IF = 12A See Fig. 7 A/µs TJ = 25°C TJ = 125°C 2 www.irf.com IRG4BC30FD-S www.irf.com 3 IRG4BC30FD-S 4 www.irf.com IRG4BC30FD-S www.irf.com 5 IRG4BC30FD-S 6 www.irf.com IRG4BC30FD-S www.irf.com 7 IRG4BC30FD-S Same type device as D.U.T. 90% Vge +Vge Vce 80% of Vce 430µF D.U.T. Ic 10% Vce 90% Ic Ic 5% Ic td(off) tf Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Eoff = ∫ t1+5µS Vce Ic Vceic dtdt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg Ic trr Qrr = ∫ trr id dt Ic dt tx tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk 10% Irr Vcc Vpk Irr Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ieIc dt Vce dt t1 ∫ t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4 Erec = Vd idIc dt Vd dt t3 ∫ t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC30FD-S Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Fig.18e - Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000µF 100V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25°C Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit www.irf.com 9 IRG4BC30FD-S D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P9@Ã'!# 6TT@H7G@9ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S A$"T 96U@Ã8P9@ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG 25 DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ 10 Q6SUÃIVH7@S A$"T 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69ÃÃAS@@ QSP9V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ www.irf.com IRG4BC30FD-S D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 Notes:  Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20). ‚ VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19). ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%. „ Pulse width 5.0µs, single shot. … When mounted on 1" square PCB (FR-4 or G-10 Material). Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04 www.irf.com 11