INSULATED GATE BIPOLAR TRANSISTOR

www.DataSheet4U.com PD - 94082A IRG4BC15UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard TO-220AB package VCES = 600V G E VCE(on) typ. = 2.02V @VGE = 15V, IC = 7.8A Benefits • Best Value for Appliance and Industrial Applications • High noise immune "Positive Only" gate driveNegative bias gate drive not necessary • For Low EMI designs- requires little or no snubbing • Single Package switch for bridge circuit applications • Compatible with high voltage Gate Driver IC's • Allows simpler gate drive n-ch an nel TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 14 7.8 42 42 4.0 16 ± 20 49 19 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ––– ––– ––– ––– ––– Typ. ––– ––– 0.50 ––– 2 (0.07) Max. 2.7 7.0 ––– 80 ––– Units °C/W g (oz) www.irf.com 1 03/20/01 IRG4BC15UD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown Voltageƒ 600 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– VCE(on) Collector-to-Emitter Saturation Voltage ––– ––– ––– VGE(th) Gate Threshold Voltage 3.0 ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– Forward Transconductance „ 4.1 gfe ICES Zero Gate Voltage Collector Current ––– ––– VFM Diode Forward Voltage Drop ––– ––– IGES Gate-to-Emitter Leakage Current ––– V(BR)CES Typ. ––– 0.63 2.02 2.56 2.21 ––– -10 6.2 ––– ––– 1.5 1.4 ––– Max. Units Conditions ––– V VGE = 0V, IC = 250µA ––– V/°C VGE = 0V, IC = 1.0mA 2.4 IC = 7.8A VGE = 15V ––– V IC = 14A ––– IC = 7.8A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA ––– mV/°C VCE = VGE, IC = 250µA ––– S VCE = 100V, IC = 7.8A 250 µA VGE = 0V, VCE = 600V 1400 VGE = 0V, VCE = 600V, TJ = 150°C 1.8 V IC = 4.0A 1.7 IC = 4.0A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. 23 4.0 9.6 17 20 160 83 0.24 0.26 0.50 16 21 180 220 0.76 7.5 410 37 5.3 28 38 2.9 3.7 40 70 280 240 Max. Units Conditions 35 IC = 7.8A 6.0 nC VCC = 400V 14 VGE = 15V ––– TJ = 25°C ––– ns IC = 7.8A, VCC = 480V 240 VGE = 15V, R G = 75Ω 120 Energy losses include "tail" and ––– diode reverse recovery. ––– mJ 0.63 ––– TJ = 150°C, ––– ns IC = 7.8A, VCC = 480V ––– VGE = 15V, R G = 75Ω ––– Energy losses include "tail" and ––– mJ diode reverse recovery. ––– nH Measured 5mm from package ––– VGE = 0V ––– pF VCC = 30V ––– ƒ = 1.0MHz 42 ns TJ = 25°C 57 TJ = 125°C IF = 4.0A 5.2 A TJ = 25°C 6.7 TJ = 125°C VR = 200V 60 nC TJ = 25°C 110 TJ = 125°C di/dt 200A/µs ––– A/µs TJ = 25°C ––– TJ = 125°C IRG4BC15UD 10 8 Load Current ( A ) 6 60% of rated voltage Duty cycle : 50% Tj = 125°C Tsink = 90°C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 11W 4 2 Ideal diodes 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) TJ = 150 °C 10 10 TJ = 150 °C 1 1 TJ = 25 °C TJ = 25 °C V GE = 15V 20µs PULSE WIDTH 1 10 0.1 0.1 0.1 5.0 V CC = 50V 5µs PULSE WIDTH 10.0 15.0 20.0 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics IRG4BC15UD 14 12 10 8 6 4 2 0 25 50 75 100 125 150 4.0 VGE = 15V 80µs PULSE WIDTH Maximum DC Collector Current(A) VCE , Collector-to Emitter Voltage (V) IC = 14A 3.0 IC = 7.8A 2.0 IC = 3.9A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 TC , Case Temperature ( ° C) T J , Junction Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case IRG4BC15UD 800 VGE, Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 7.8A 16 C, Capacitance (pF) 600 C ies 400 12 8 C oes 200 4 C res 0 1 10 100 0 0 5 10 15 20 25 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.48 VCC = 480V VGE = 15V TJ = 25°C I C = 7.8A 0.46 10 RG = 75Ω VGE = 15V VCC = 480V IC = 14A Total Switching Losses (mJ) Total Switching Losses (mJ) 1 IC = 7.8A 0.44 IC = 3.9A 0.42 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R G, Gate Resistance ( Ω ) T J, Junction Temperature (°C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature IRG4BC15UD 2.0 RG = 75Ω TJ = 150°C VGE = 15V VCC = 480V 100 VGE = 20V TJ = 125° Total Switching Losses (mJ) 1.6 1.2 C, Capacitance(pF) SAFE OPERATING AREA 10 0.8 0.4 0.0 2 4 6 8 10 12 14 16 1 1 10 100 1000 IC , Collector Current (A) VDS , Drain-to-Source Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA 10 TJ = 150°C TJ = 125°C T = 25°C J 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 F orward V oltage D rop - V F M ) (V Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current IRG4BC15UD 50 14 VR = 20 0V T J = 1 25 °C T J = 2 5°C 45 I F = 8.0A I F = 4.0A 12 I F = 8.0A 10 40 I F = 4.0A trr- (nC) Irr- ( A) 8 35 6 30 4 25 VR = 2 00 V T J = 1 2 5°C T J = 2 5 °C 20 100 1000 2 di f /dt - (A/µ s) 0 100 1000 di f /dt - (A/µ s) Fig. 14 - Typical Reverse Recovery vs. dif/dt 200 VR = 2 00 V T J = 1 25°C T J = 2 5°C 160 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 20 0V T J = 1 25 °C T J = 2 5°C I F = 8.0A I F = 8.0A di (rec) M/dt- (A /µs) 120 I F = 4.0A I F = 4.0A Qrr- (nC) 80 40 0 100 di f /dt - (A/µ s) 1000 100 100 A 1000 di f /dt - (A/µ s ) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt, IRG4BC15UD Same ty pe device as D .U.T. 90% Vge +Vge V ce 80% of Vce 430µF D .U .T. Ic 10% Vce Ic 5 % Ic td (o ff) tf 9 0 % Ic Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf E o ff = ∫ t1 + 5 µ S V c e Ic Vceic d tdt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = ∫ t4 V d idIc t dt Vd d t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr IRG4BC15UD V g G AT E SIG NA L DE VIC E U ND E R T E ST CU R RE NT D .U .T. VO L TA G E IN D.U .T. CU R RE NT IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 600 0µF 100V Vc* D.U.T. RL= 0 - 480V 480V 4 X I C @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit IRG4BC15UD Notes:  Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature ‚ VCC=80%(VCES), VGE=20V, L=10µH, RG = 75Ω ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%. „ Pulse width 5.0µs, single shot. Case Outline — TO-220AB 1 0 .5 4 (.41 5 ) 1 0 .2 9 (.40 5 ) 2 .8 7 (.