HEXFET Power MOSFET

PD - 95376A SMPS MOSFET Applications High frequency DC-DC converters l Lead-Free l HEXFET® Power MOSFET IRFR9N20DPbF IRFU9N20DPbF ID 9.4A VDSS 200V RDS(on) max 0.38Ω Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l D-Pak IRFR9N20D I-Pak IRFU9N20D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 9.4 6.7 38 86 0.57 ± 30 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V input Forward Converter Notes  through † are on page 10 www.irf.com 1 12/06/04 IRFR/U9N20DPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 200 ––– ––– V VGS = 0V, ID = 250µA ––– 0.23 ––– V/°C Reference to 25°C, ID = 1mA † ––– ––– 0.38 Ω VGS = 10V, ID = 5.6A „ 3.0 ––– 5.5 V VDS = VGS, ID = 250µA ––– ––– 25 VDS = 200V, VGS = 0V µA ––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C ––– ––– 100 VGS = 30V nA ––– ––– -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 4.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 18 4.7 9.0 7.5 16 13 9.3 560 97 29 670 40 74 Max. Units Conditions ––– S VDS = 50V, ID = 5.6A 27 ID = 5.6A 7.1 nC VDS = 160V 14 VGS = 10V, „ ––– VDD = 100V ––– ID = 5.6A ns ––– RG = 11Ω ––– VGS = 10V „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, V DS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 160V … Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 100 5.6 8.6 Units mJ A mJ Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Typ. ––– ––– ––– Min. Typ. Max. Units Max. 1.75 50 110 Units °C/W Diode Characteristics IS ISM VSD trr Qrr ton Conditions D MOSFET symbol ––– ––– 9.4 showing the A G integral reverse ––– ––– 38 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 5.6A, VGS = 0V „ ––– 130 ––– ns TJ = 25°C, I F = 5.6A ––– 560 ––– nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFR/U9N20DPbF 100 VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V TOP 10 10 5.5V 1 1 5.5V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 0.1 0.1 20µs PULSE WIDTH TJ = 175 ° C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 9.4A I D , Drain-to-Source Current (A) 2.5 10 TJ = 175 ° C 2.0 1.5 TJ = 25 ° C 1 1.0 0.5 0.1 4 6 8 V DS = 50V 20µs PULSE WIDTH 10 12 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFR/U9N20DPbF 10000 20 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C + Cgd , C gs ds SHORTED Crss = C gd Coss = Cds + Cgd ID = 5.6A VDS = 160V VDS = 100V VDS = 40V 16 C, Capacitance(pF) 1000 Ciss 12 100 Coss 8 Crss 10 1 10 100 1000 4 VDS , Drain-to-Source Voltage (V) 0 0 5 10 15 FOR TEST CIRCUIT SEE FIGURE 13 20 25 30 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 ID , Drain Current (A) 100 10us 10 100us 1ms 1 10ms TJ = 175 ° C 1 TJ = 25 ° C V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 0.1 0.2 0.1 1 TC = 25 ° C TJ = 175 ° C Single Pulse 10 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR/U9N20DPbF 10.0 V DS VGS RD 8.0 ID , Drain Current (A) RG VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -VDD 6.0 4.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U9N20DPbF 15V EAS , Single Pulse Avalanche Energy (mJ) 200 TOP 160 VDS L DRIVER BOTTOM ID 2.3A 4.0A 5.6A RG 20V D.U.T IAS tp + V - DD 120 A 0.01Ω 80 Fig 12a. Unclamped Inductive Test Circuit 40 V(BR)DSS tp 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 12V .2µF 50KΩ .3µF QGS VG QGD D.U.T. VGS 3mA + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFR/U9N20DPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFR/U9N20DPbF D-Pak (TO-252AA) Package Outline D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H AS SEMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE ASS EMBLY LINE "A" Note: "P" in ass embly line pos ition indicates "Lead-F ree" PART NUMBER INTERNAT IONAL RECT IF IER LOGO IRFU120 12 916A 34 ASS EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INT ERNAT IONAL RECTIF IER LOGO IRFU120 12 34 DAT E CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = AS SEMBLY S ITE CODE AS SEMBLY LOT CODE 8 www.irf.com IRFR/U9N20DPbF I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: THIS IS AN IRFU120 WIT H ASSEMBLY LOT CODE 5678 ASSE MBLED ON WW 19, 1999 IN T HE ASSE MBLY LINE "A" Note: "P" in as s embly line position indicates "Lead-F ree" PART NUMBER INT ERNAT IONAL RECTIF IER LOGO IRFU120 919A 56 78 AS SEMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEE K 19 LINE A OR INT ERNAT IONAL RECT IF IER LOGO PART NUMBER IRF U120 56 78 ASS EMBLY LOT CODE DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = ASS EMBLY S ITE CODE www.irf.com 9 IRFR/U9N20DPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes:  Repetitive rating; pulse width limited by max. junction temperature. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ‚ Starting TJ = 25°C, L = 6.4mH RG = 25Ω, IAS = 5.6A. ƒ ISD ≤ 5.6A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change wit