AUTOMOTIVE MOSFET

PD - 95374A AUTOMOTIVE MOSFET Features l l l l l l IRFR4105ZPbF IRFU4105ZPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V G S RDS(on) = 24.5mΩ ID = 30A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. www.DataSheet4U.com D-Pak IRFR4105Z I-Pak IRFU4105Z Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM Max. 30 21 120 48 0.32 ± 20 Units A W W/°C V mJ A mJ ™ PD @TC = 25°C Power Dissipation VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energyd Single Pulse Avalanche Energy Tested Value Avalanche CurrentÙ Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw h 29 46 See Fig.12a, 12b, 15, 16 -55 to + 175 g °C 300 (1.6mm from case ) 10 lbfyin (1.1Nym) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient Typ. Max. 3.12 40 110 Units °C/W i ––– ––– ––– HEXFET® is a registered trademark of International Rectifier. www.irf.com 1 12/06/04 IRFR/U4105ZPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 55 ––– ––– 2.0 16 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.053 19 ––– ––– ––– ––– ––– ––– 18 5.3 7.0 10 40 26 24 4.5 7.5 740 140 74 450 110 180 ––– ––– 24.5 4.0 ––– 20 250 200 -200 27 ––– ––– ––– ––– ––– ––– ––– nH ––– ––– ––– ––– ––– ––– ––– pF ns nC nA V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 18A e V S µA VDS = VGS, ID = 250µA VDS = 15V, ID = 18A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V ID = 18A VDS = 44V VGS = 10V VDD = 28V ID = 18A RG = 24.5 Ω VGS = 10V e e D G S Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V f Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ù Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 19 14 30 A 120 1.3 29 21 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 18A, VGS = 0V TJ = 25°C, IF = 18A, VDD = 28V di/dt = 100A/µs e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFR/U4105ZPbF 1000 TOP VGS 1000 TOP ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 10 10 1 4.5V 60µs PULSE WIDTH Tj = 25°C 0.1 0.1 0 4.5V 60µs PULSE WIDTH Tj = 175°C 1 1 10 100 100 0.1 0 1 10 100 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 30 Gfs, Forward Transconductance (S) T J = 175°C 25 20 15 ID, Drain-to-Source Current (Α) 100 T J = 175°C 10 T J = 25°C T J = 25°C 1 10 5 0 0 10 20 30 40 ID, Drain-to-Source Current (A) VDS = 25V 60µs PULSE WIDTH 0 4 5 6 7 8 9 10 VDS = 8.0V 380µs PULSE WIDTH VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance Vs. Drain Current www.irf.com 3 IRFR/U4105ZPbF 1200 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 20 VGS, Gate-to-Source Voltage (V) ID= 18A VDS= 44V VDS= 28V VDS= 11V 1000 16 C, Capacitance (pF) 800 Ciss 12 600 8 400 200 Coss Crss 4 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 100 0 0 5 10 15 20 25 30 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.0 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100.0 T J = 175°C 10.0 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 100µsec 1.0 T J = 25°C VGS = 0V 1 Tc = 25°C Tj = 175°C Single Pulse 1 10 1msec 10msec 0.1 0.0 0.5 1.0 1.5 2.0 VSD, Source-toDrain Voltage (V) 0.1 100 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR/U4105ZPbF 30 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) 25 ID = 18A VGS = 10V 2.0 ID , Drain Current (A) 20 15 1.5 10 1.0 5 0 25 50 75 100 125 150 175 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) T J , Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature 10 Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 0.02 0.01 τJ τ1 τ2 Ri (°C/W) τi (sec) 1.100 0.000174 1.601 0.000552 0.418 0.007193 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/Ri Ci= i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.001 1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U4105ZPbF 120 EAS, Single Pulse Avalanche Energy (mJ) 15V 100 VDS L DRIVER ID 2.0A 3.5A BOTTOM 18A TOP 80 RG 20V VGS D.U.T IAS tp + V - DD A 60 0.01Ω 40 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 20 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature (°C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS VG QGD VGS(th) Gate threshold Voltage (V) 4.5 4.0 Charge 3.5 Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. ID = 250µA 3.0 50KΩ 12V .2µF .3µF 2.5 D.U.T. VGS 3mA + V - DS 2.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature 6 www.irf.com IRFR/U4105ZPbF 100 Duty Cycle = Single Pulse Avalanche Current (A) 10 0.01 0.05 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 30 EAR , Avalanche Energy (mJ) 25 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 18A 20 15 10 5 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com 7 IRFR/U4105ZPbF Driver Gate Drive D.U.T + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VD