HEXFET Power MOSFET

PD- 93932 PROVISIONAL IRFPS60N50C HEXFET® Power MOSFET SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Recommended clip force VDSS 500V RDS(on) typ. 0.038Ω ID 60A Super-247™ Max. 60 38 240 390 3.1 ± 20 5.0 -55 to + 150 300 20 Units A W W/°C V V/ns °C N Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 600 60 39 Units mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.24 ––– Max. 0.32 ––– 40 Units °C/W www.irf.com 1 6/2/00 IRFPS60N50C Symbol V(BR)DSS ∆V(BR)DSS/∆TJ PROVISIONAL Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 ––– ––– 3.5 ––– ––– ––– ––– Typ. ––– 0.68 0.038 ––– ––– ––– ––– ––– Max. Units Conditions ––– V V GS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA† 0.043 Ω VGS = 10V, ID = 36A „ 5.5 V VDS = VGS, ID = 250µA 25 VDS = 500V, VGS = 0V µA 250 VDS = 400V, VGS = 0V, TJ = 125°C 100 VGS = 20V nA -100 VGS = -20V RDS(on) VGS(th) IDSS IGSS Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Symbol IS ISM Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 34 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 330 77 160 39 49 94 11 10760 6120 240 25760 240 780 Max. Units Conditions ––– S VDS = 50V, ID = 36A ––– ID = 36A ––– nC VDS = 400V ––– VGS = 10V, „ ––– VDD = 250V ––– ID = 36A ns ––– RG = 1.3Ω ––– VGS = 10V, „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 400V … Diode Characteristics Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 60 ––– ––– showing the A G integral reverse ––– ––– 240 S p-n junction diode. ––– ––– 1.5 V TJ = 25°C, IS = 36A, VGS = 0V „ ––– 920 1380 ns TJ = 125°C, IF = 36A ––– 20 30 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VSD trr Q rr ton Notes:  Repetitive rating; pulse width limited by max. junction temperature. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. ‚ Starting TJ = 25°C, L = 0.93mH, RG = 25Ω, IAS = 36A, ƒ ISD ≤ 36A, di/dt ≤ 42A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C 2 www.irf.com PROVISIONAL IRFPS60N50C Super-247™ Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00 www.irf.com 3