HEXFET Power MOSFET

PD - 94630 SMPS MOSFET IRFPS38N60L HEXFET® Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS(on) typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 120mΩ 600V 170ns 38A • Motor Control applications Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate charge results in simpler drive requirements. • Enhanced dv/dt capabilities offer improved ruggedness. • Higher Gate voltage threshold offers improved noise immunity. SUPER TO-247AC Absolute Maximum Ratings ID @ TC = 25°C IDM Parameter Continuous Drain Current, VGS @ 10V Max. 38 24 150 540 4.3 ±30 13 -55 to + 150 300 (1.6mm from case ) 1.1(10) N•m (lbf•in) W W/°C V V/ns °C Units A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG ™ Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and d Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ãc Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 170 420 830 9.1 38 A 150 1.5 250 630 1240 14 nC A V ns Conditions MOSFET symbol showing the integral reverse G D p-n junction diode. TJ = 25°C, IS = 38A, VGS = 0V TJ = 25°C, IF = 38A TJ = 125°C, di/dt = 100A/µs J J f S 2600 3900 f T = 25°C, I = 38A, V = 0V f T = 125°C, di/dt = 100A/µs f S GS TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com 1 02/12/03 IRFPS38N60L Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS RG Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance Min. Typ. Max. Units 600 ––– ––– 3.0 ––– ––– ––– ––– ––– ––– 0.41 120 ––– ––– ––– ––– ––– 1.2 ––– ––– 150 5.0 50 2.0 100 -100 ––– Ω V mΩ V µA mA nA Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 23A V/°C Reference to 25°C, ID = 1mA f VDS = VGS, ID = 250µA VDS = 600V, VGS = 0V VDS = 480V, VGS = 0V, TJ = 125°C VGS = 30V VGS = -30V f = 1MHz, open drain Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. Coss eff. (ER) Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Effective Output Capacitance (Energy Related) Min. Typ. Max. Units 20 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 44 130 92 69 7990 740 72 350 260 ––– 320 85 160 ––– ––– ––– ––– ––– ––– ––– ––– ––– pF ns nC S ID = 38A Conditions VDS = 50V, ID = 23A VDS = 480V VGS = 10V, See Fig. 7 & 15 VDD = 300V ID = 38A RG = 4.3Ω VGS = 10V, See Fig. 11a & 11b VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 VGS = 0V,VDS = 0V to 480V f f g Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentÙ Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 680 38 54 Units mJ A mJ ™ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.24 ––– Max. 0.22 ––– 40 Units °C/W Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) ‚ Starting TJ = 25°C, L = 0.91mH, RG = 25Ω, IAS = 38A, dv/dt = 13V/ns. (See Figure 12a) ƒ ISD ≤ 38A, di/dt ≤ 630A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V DSS . Coss eff.(ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80% V DSS . 2 www.irf.com IRFPS38N60L 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 100 BOTTOM 10 BOTTOM 1 10 4.5V 0.1 4.5V 0.01 1 20µs PULSE WIDTH Tj = 25°C 0.001 0.1 1 10 100 0.1 0.1 1 20µs PULSE WIDTH Tj = 150°C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 RDS(on) , Drain-to-Source On Resistance ID = 38A 2.5 ID, Drain-to-Source Current (Α) VGS = 10V 100 T J = 150°C 10 2.0 (Normalized) 1.5 1 T J = 25°C 0.1 1.0 0.5 0.01 4 6 8 10 12 14 16 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRFPS38N60L 100000 VGS Ciss Crss Coss 10000 = 0V, f = 1 MHZ =C +C , C gs gd ds SHORTED =C gd =C +C ds gd 50 45 40 35 Energy (µJ) Ciss C, Capacitance(pF) 30 25 20 15 1000 Coss 100 Crss 10 5 10 1 10 100 1000 0 0 100 200 300 400 500 600 700 VDS , Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typ. Output Capacitance Stored Energy vs. VDS 12.0 ID= 38A VGS , Gate-to-Source Voltage (V) 1000.00 VDS= 480V VDS= 300V VDS= 120V 8.0 ISD, Reverse Drain Current (A) 10.0 100.00 T J = 150°C 10.00 6.0 4.0 1.00 T J = 25°C 2.0 VGS = 0V 0.0 0 50 100 150 200 250 Q G Total Gate Charge (nC) 0.10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Gate Charge vs. Gate-to-Source Voltage Fig 8. Typical Source-Drain Diode Forward Voltage 4 www.irf.com IRFPS38N60L 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) 40 35 30 ID, Drain Current (A) 100 25 20 15 10 5 0 10 100µsec 1msec 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 100 1000 10000 VDS, Drain-to-Source Voltage (V) 10msec 25 50 75 100 125 150 T C , Case Temperature (°C) Fig 9. Maximum Safe Operating Area Fig 10. Maximum Drain Current vs. Case Temperature VDS VGS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD VDS 90% D.U.T. + -VDD 10% VGS td(on) tr t d(off) tf Fig 11a. Switching Time Test Circuit Fig 11b. Switching Time Waveforms www.irf.com 5 IRFPS38N60L 1 Thermal Response ( Z thJC ) 0.1 D = 0.50 0.20 0.10 0.01 0.05 0.02 0.01 P DM t1 0.001 t2 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +T C J = P DM x Z thJC 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 12. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5.0 VGS(th) Gate threshold Voltage (V) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 ID = 250µA T J , Temperature ( °C ) Fig 13. Threshold Voltage vs. Temperature 6 www.irf.com IRFPS38N60L 1400 EAS , Single Pulse Avalanche Energy (mJ) 1200 1000 800 600 400 200 0 25 50 75 ID TOP 17A 24A BOTTOM 38A 100 125 150 Starting T J , Junction Temperature (°C) Fig 14a. Maximum Avalanche Energy vs. Drain Current 15V V(BR)DSS VDS L DRIVER tp RG 20V D.U.T IAS tp + - VDD A 0.01Ω I AS Fig 14b. Unclamped Inductive Test Circuit Current Regulator Same Type as D.U.T. Fig 14c. Unclamped Inductive Waveforms 50KΩ 12V .2µF .3µF QG VGS V D.U.T. + V - DS QGS VG QGD VGS 3mA IG ID Current Sampling Resistors Charge Fig 15a. Gate Charge Test Circuit Fig 15b. Basic Gate Charge Waveform www.irf.com 7 IRFPS38N60L Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 16. For N-Channel HEXFET® Power MOSFETs 8 www.irf.com IRFPS38N60L SUPER TO-247AC Package Outline Dimensions are shown in millimeters (inches) 0.13 [.005] 16.10 [.632] 15.10 [.595] A 5.50 [.216] 4.50 [.178] 0.25 [.010] BA 2X R 3.00 [.118] 2.00 [.079] 2.15 [.084] 1.45 [.058] 13.90 [.547] 13.30 [.524] 1.30 [.051] 0.70 [.028] 20.80 [.818] 19.80 [.780] 4 16.10 [.633] 15.50 [.611] 4 C 1 2 3 B 14.80 [.582] 13.80 [.544] Ø 1.60 [.063] MAX. E E 4.25 [.167] 3.85 [.152] 5.45 [.215] 2X 3X 1.60 [.062] 1.45 [.058] BA 3X 1.30 [.051] 1.10 [.044] 0.25 [.010] 2.35 [.092] 1.65 [.065] S ECT ION E-E NOT ES: 1. DIMENS IONING AND T OLE RANCING PER ASME Y14.5M-1994. 2. DIMENSIONS ARE SHOWN IN MILLIMETE RS [INCHES] 3. CONT ROLLING DIMENSION: MILLIMET ER 4. OUT LINE CONF ORMS TO JEDEC OUT LINE T O-274AA LEAD ASSIGNME NTS MOS FET 1 - GAT E 2 - DRAIN 3 - SOURCE 4 - DRAIN IGBT 1 - GAT E 2 - COLLECT OR 3 - EMIT T ER 4 - COLLECT OR Super TO-247AC package is not recommende