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PD- 95718
IRFPG30PbF
Lead-Free
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8/3/04
IRFPG30PbF
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IRFPG30PbF
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IRFPG30PbF
4
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IRFPG30PbF
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IRFPG30PbF
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IRFPG30PbF
Peak Diode Recovery dv/dt Test Circuit
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Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
+ +
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• dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test
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* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
ISD
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig -14 For N Channel HEXFETS
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IRFPG30PbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN T HE ASSEMBLY LINE "H"
Note: "P" in assembly line position indicates "Lead-Free"
PART NUMBER INT ERNATIONAL RECTIFIER LOGO ASS EMBLY LOT CODE
IRFPE30
56 035H 57
DATE CODE YEAR 0 = 2000 WEEK 35 LINE H
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/04
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