HEXFET Power MOSFET

SMPS MOSFET PD-94809 IRFP460NPbF HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Switch Mode Power Supply ( SMPS ) Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss specified ( See AN1001) VDSS 500V Rds(on) max 0.24Ω ID 20A TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 20 13 80 280 2.2 ± 30 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V/ns °C Typical SMPS Topologies: Full Bridge PFC Boost Notes through are on page 8 www.irf.com 1 11/3/03 IRFP460NPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 500 ––– ––– V VGS = 0V, ID = 250µA ––– 0.58 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.24 Ω VGS = 10V, ID = 12A 3.0 ––– 5.0 V VDS = VGS, ID = 250µA ––– ––– 25 VDS = 500V, VGS = 0V µA ––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C ––– ––– 100 VGS = 30V nA ––– ––– -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 10 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 23 87 34 33 3540 350 30 3930 95 200 Max. Units Conditions ––– S VDS = 50V, ID = 12A 124 ID = 20A 40 nC VDS = 400V 57 VGS = 10V, See Fig. 6 and 13 ––– VDD = 250V ––– ID = 20A ns ––– R G = 4.3Ω ––– R D = 13Ω,See Fig. 10 ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 400V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 340 20 28 Units mJ A mJ Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Typ. ––– 0.24 ––– Max. 0.45 ––– 40 Units °C/W Diode Characteristics Min. Typ. Max. Units IS ISM VSD trr Qrr ton Conditions D MOSFET symbol 20 ––– ––– showing the A G integral reverse ––– ––– 80 S p-n junction diode. ––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V ––– 550 825 ns TJ = 25°C, IF = 20A ––– 7.2 10.8 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFP460NPbF 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) 10 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 1 0.1 1 5.0V 0.01 5.0V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.001 0.1 0.1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.5 TJ = 150 ° C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 20A I D , Drain-to-Source Current (A) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 10 TJ = 25 ° C 1 0.1 V DS = 50V 20µs PULSE WIDTH 5 6 7 8 9 10 11 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFP460NPbF 100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds 20 ID = 20A VGS , Gate-to-Source Voltage (V) 16 10000 VDS = 400V VDS = 250V VDS = 100V C, Capacitance(pF) Ciss 1000 12 Coss 8 100 Crss 4 10 1 10 100 1000 0 FOR TEST CIRCUIT SEE FIGURE 13 0 20 40 60 80 100 120 140 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current (A) 10 ID, Drain-to-Source Current (A) TJ = 150 ° C 100 10 100µsec 1msec TJ = 25 ° C 1 1 T A = 25°C T J = 150°C Single Pulse 10 100 10msec 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 VSD,Source-to-Drain Voltage (V) 1000 10000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFP460NPbF 20 VDS VGS RD ID , Drain Current (A) 15 RG D.U.T. + -VDD 10V 10 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFP460NPbF EAS , Single Pulse Avalanche Energy (mJ) 15V 750 VDS L DRIVER 600 ID 8.9A 12.6A BOTTOM 20A TOP RG 20V D.U.T IAS tp + V - DD 450 A 0.01Ω 300 Fig 12a. Unclamped Inductive Test Circuit 150 V(BR)DSS tp 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 10 V QGS VG QG 50KΩ 12V .2µF .3µF QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFP460NPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + + - RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFP460NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) 15.90 (.626) 15.30 (.602) -B3.65 (.143) 3.55 (.140) -A0.25 (.010) M D B M 5.50 (.217) 20.30 (.800) 19.70 (.775) 1 2 3 -C14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145) 0.80 (.031) 3X 0.40 (.016) C AS 2.60 (.102) 2.20 (.087) -D5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 2X 5.50 (.217) 4.50 (.177) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) LEAD ASSIGNMENTS Hexfet IGBT 1 -LEAD ASSIGNMENTS Gate 1 - Gate 12 - Drain GATE2 - Collector 2 - DRAIN 3 - Source 3 - Emitter 3 - SOURCE 4 - Drain DRAIN - Collector 4 4- TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 1.8mH RG = 25Ω, IAS = 20A. (See Figure 12) ISD ≤ 20A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/03 8 www.irf.com