HEXFET Power MOSFET

PD- 95712 IRFP340PbF • Lead-Free www.irf.com 1 8/2/04 IRFP340PbF 2 www.irf.com IRFP340PbF www.irf.com 3 IRFP340PbF 4 www.irf.com IRFP340PbF www.irf.com 5 IRFP340PbF 6 www.irf.com IRFP340PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + + - • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig-14 For N Channel HEXFETS www.irf.com 7 IRFP340PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRF PE30 WIT H AS S EMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2000 IN T HE AS S EMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" PART NUMBER INTERNAT IONAL RECT IF IER LOGO AS S EMBLY LOT CODE IRFPE30 56 035H 57 DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/04 8 www.irf.com