HEXFET Power MOSFET

AUTOMOTIVE MOSFET PD - 95480 IRFP2907ZPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET® Power MOSFET D VDSS = 75V RDS(on) = 4.5mΩ‰ G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. ID = 90A TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Max. 170 120 90 680 310 2.0 ± 20 520 690 See Fig.12a,12b,15,16 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A ™ Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current W W/°C V mJ A mJ °C ™ i d Repetitive Avalanche Energy Operating Junction and Storage Temperature Range h Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance RθJC RθCS RθJA Junction-to-Case j Parameter Typ. Max. 0.49 ––– 40 Units °C/W Case-to-Sink, Flat, Greased Surface Junction-to-Ambient j jà ––– 0.24 ––– HEXFET® is a registered trademark of International Rectifier. www.irf.com 1 7/16/04 IRFP2907ZPbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 75 ––– ––– 2.0 180 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.069 3.5 ––– ––– ––– ––– ––– ––– 180 46 65 19 140 97 100 5.0 13 7500 970 510 3640 650 1020 ––– ––– 4.5 4.0 ––– 20 250 200 -200 270 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 90A V VDS = VGS, ID = 250µA S VDS = 25V, ID = 90A µA VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V ID = 90A nC VDS = 60V VGS = 10V ns VDD = 38V ID = 90A RG = 2.5Ω VGS = 10V D nH Between lead, f f f 6mm (0.25in.) from package G Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ù Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time S and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 60V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 60V Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 41 59 90 A 680 1.3 61 89 V ns nC Conditions MOSFET symbol showing the integral reverse G D p-n junction diode. TJ = 25°C, IS = 90A, VGS = 0V TJ = 25°C, IF = 90A, VDD = 38V di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) f f S Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Limited by TJmax, starting TJ = 25°C, L=0.13mH, RG = 25Ω, IAS = 90A, VGS =10V. Part not recommended for use above this value. ƒ ISD ≤ 90A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. „ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. † Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. ‡ This value determined from sample failure population. 100% tested to this value in production. ˆ Rθ is measured at TJ of approximately 90°C. 2 www.irf.com IRFP2907ZPbF 10000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Current (A) 1000 BOTTOM ID, Drain-to-Source Current (A) BOTTOM 100 100 4.5V 10 4.5V ≤60µs PULSE WIDTH 1 0.1 1 Tj = 25°C 10 100 0.1 1 10 ≤60µs PULSE WIDTH Tj = 175°C 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 Gfs, Forward Transconductance (S) 200 T J = 25°C 150 ID, Drain-to-Source Current (Α) 100 T J = 175°C 10 T J = 25°C 100 T J = 175°C 1 VDS = 25V ≤60µs PULSE WIDTH 0.1 2 4 6 8 10 50 V DS = 10V 380µs PULSE WIDTH 0 0 25 50 75 100 125 150 ID,Drain-to-Source Current (A) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com 3 IRFP2907ZPbF 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 12.0 ID= 90A VGS, Gate-to-Source Voltage (V) 10.0 8.0 6.0 4.0 2.0 0.0 VDS= 60V VDS= 38V VDS= 15V C, Capacitance(pF) 10000 Ciss Coss 1000 Crss 100 1 10 100 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD, Reverse Drain Current (A) T J = 175°C 100 ID, Drain-to-Source Current (A) 1000 100 100µsec 10 TJ = 25°C 10 1msec 1 Tc = 25°C Tj = 175°C Single Pulse 1 10 10msec VGS = 0V 1 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-to-Drain Voltage (V) 0.1 100 1000 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFP2907ZPbF 175 150 ID, Drain Current (A) 2.5 Limited By Package RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 90A VGS = 10V 2.0 125 100 75 50 25 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.01 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 Ri (°C/W) 0.1224 0.1238 0.2433 τi (sec) 0.000360 0.001463 0.021388 τ1 τ2 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 0.0001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFP2907ZPbF 2500 EAS , Single Pulse Avalanche Energy (mJ) 15V 2000 VDS L DRIVER ID 16A 25A BOTTOM 90A TOP RG VGS 20V D.U.T IAS tp + V - DD 1500 A 0.01Ω 1000 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 500 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy vs. Drain Current 10 V QGS VG VGS(th) Gate threshold Voltage (V) 3.5 QGD 4.0 Charge 3.0 Fig 13a. Basic Gate Charge Waveform 2.5 ID = 250µA 2.0 1.5 L 0 DUT 1K VCC 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature 6 www.irf.com IRFP2907ZPbF 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 0.01 0.05 10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 0.10 1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 600 EAR , Avalanche Energy (mJ) 500 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 90A 400 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth]