HEXFET Power MOSFET

SMPS MOSFET PD - 95479A IRFP27N60KPbF Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Enhanced Body Diode dv/dt Capability Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting torqe, 6-32 or M3 screw HEXFET® Power MOSFET VDSS 600V RDS(on) typ. 180mΩ ID 27A TO-247AC Max. 27 18 110 500 4.0 ± 30 13 -55 to + 150 300 10 lbf•in (1.1N•m) Units A W W/°C V V/ns °C Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 530 27 50 Units mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.24 ––– Max. 0.29 ––– 40 Units °C/W www.irf.com 1 09/26/05 IRFP27N60KPbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 600 ––– ––– 3.0 ––– ––– ––– ––– Min. 14 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.64 180 ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 27 110 43 38 4660 460 41 5490 120 250 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 220 mΩ VGS = 10V, ID = 16A „ 5.0 V VDS = VGS, ID = 250µA 50 VDS = 600V, VGS = 0V µA 250 VDS = 480V, VGS = 0V, TJ = 125°C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions ––– S VDS = 50V, ID = 16A 180 ID = 27A 56 nC VDS = 480V 86 VGS = 10V, See Fig. 6 and 13 „ ––– VDD = 300V ––– ID = 27A ns ––– R G = 4.3Ω ––– VGS = 10V,See Fig. 10 „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 480V … Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 27A, VGS = 0V TJ = 25°C, IF = 27A di/dt = 100A/µs „ Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Symbol IS ISM Diode Characteristics Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Reverse RecoveryCurrent Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– 27 A 110 D S VSD trr Q rr IRRM ton Notes: ––– ––– 1.5 V „ ––– 620 920 ns ––– 11 16 µC ––– 36 53 A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) IAS = 27A, dv/dt = 13V/ns. (See Figure 12a) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. ‚ Starting TJ = 25°C, L = 1.4mH, RG = 25Ω, ƒ ISD ≤ 27A, di/dt ≤ 390A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. 2 www.irf.com IRFP27N60KPbF 1000 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 100 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 10 10 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 5.0V 1 1 0.1 0.01 5.0V 20µs PULSE WIDTH Tj = 25°C 0.1 1 10 100 0.1 0.001 20µs PULSE WIDTH Tj = 150°C 0.01 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.00 3.5 I D = 28A ID, Drain-to-Source Current (Α) 100.00 T J = 150°C R DS(on) , Drain-to-Source On Resistance 3.0 2.5 (Normalized) 10.00 2.0 1.00 1.5 T J = 25°C 0.10 1.0 0.01 5.0 7.0 9.0 VDS = 100V 20µs PULSE WIDTH 11.0 13.0 15.0 0.5 0.0 -60 -40 -20 0 20 40 60 80 100 V GS = 10V 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFP27N60KPbF 100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds 12 ID = 28A VDS = 480V VDS = 300V VDS = 120V 10 10000 Ciss 1000 VGS , Gate-to-Source Voltage (V) C, Capacitance(pF) 7 Coss 100 5 2 Crss 10 1 10 100 1000 0 0 30 60 90 120 150 VDS , Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 ID, Drain-to-Source Current (A) 100 I SD , Reverse Drain Current (A) 10 T J 150 ° C = 10 100µsec 1msec 1 Tc = 25°C Tj = 150°C Single Pulse 10 100 10msec 1000 10000 T J 25 ° C = 1 0.1 0.2 0.5 0.8 V GS = 0 V 1.1 1.4 0.1 V SD ,Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFP27N60KPbF 30 V DS VGS RG RD 25 D.U.T. + 20 -VDD ID , Drain Current (A) 10V 15 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10 Fig 10a. Switching Time Test Circuit VDS 90% 5 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 (Z thJC ) D = 0.50 0.1 0.20 Thermal Response 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.001 0.00001 0.0001 0.001 0.01 t1/ t 2 +TC 1 J = P DM x Z thJC 0.1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFP27N60KPbF 950 TOP 760 BOTTOM ID 13A 18A 28A EAS , Single Pulse Avalanche Energy (mJ) 15V 570 VDS L DRIVER 380 RG 20V D.U.T IAS + - VDD A 190 tp 0.01Ω Fig 12c. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 Starting Tj, Junction Temperature ( ° C) Fig 12a. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS I AS Fig 12d. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF .3µF QG VGS D.U.T. + V - DS QGS VG QGD VGS 3mA IG ID Current Sampling Resistors Charge Fig 13a. Gate Charge Test Circuit Fig 13b. Basic Gate Charge Waveform 6 www.irf.com IRFP27N60KPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + V DD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFP27N60KPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAQ@"à XDUCÃ6TT@H7G`à GPUÃ8P9@Ã$%$& 6TT@H7G@9ÃPIÃXXÃ"$Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅCÅ Note: "P" in assembly line position indicates "Lead-Free" DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S ,5)3( Ã"$C $%ÃÃÃÃÃÃÃÃÃÃÃ$& 96U@Ã8P9@ `@6SÃÃ2Ã! X@@FÃ"$ GDI@ÃC Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/05 8 www.irf.com