HEXFET Power MOSFET

IRFP22N60KPbF SMPS MOSFET Applications l Hard Switching Primary or PFS Switch l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive l Lead-Free l PD - 94876 HEXFET® Power MOSFET VDSS 600V RDS(on) typ. 240mΩ ID 22A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Enhanced Body Diode dv/dt Capability Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) TO-247AC Max. 22 14 88 370 2.9 ± 30 15 -55 to + 150 300 Units A W W/°C V V/ns °C Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 380 22 37 Units mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.24 ––– Max. 0.34 ––– 40 Units °C/W www.irf.com 1 12/9/03 IRFP22N60KPbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. 600 ––– ––– 3.0 ––– ––– ––– ––– Min. 11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.30 240 ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 26 99 48 37 3570 350 36 4710 92 180 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA† 280 mΩ VGS = 10V, ID = 13A „ 5.0 V VDS = VGS, ID = 250µA 50 µA VDS = 600V, VGS = 0V 250 µA VDS = 480V, VGS = 0V, TJ = 125°C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions ––– S VDS = 50V, ID = 13A 150 ID = 22A 45 nC VDS = 480V 76 VGS = 10V „ ––– VDD = 300V ––– ID = 22A ns ––– RG = 6.2 Ω ––– VGS = 10V „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 480V … Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Symbol IS ISM Diode Characteristics Min. Typ. Max. Units Conditions D ––– ––– 22 MOSFET symbol showing the A G ––– ––– 88 integral reverse S p-n junction diode. ––– ––– 1.5 V TJ = 25°C, IS = 22A, VGS = 0V „ IF = 22A ––– 590 890 TJ = 25°C ns ––– 670 1010 TJ = 125°C di/dt = 100A/µs „ ––– 7.2 11 TJ = 25°C µC ––– 8.5 13 TJ = 125°C ––– 26 39 A TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VSD trr Qrr IRRM ton Notes:  Repetitive rating; pulse width limited by max. junction temperature. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . ‚ Starting TJ = 25°C, L = 1.5mH, RG = 25Ω, IAS = 22A ƒ ISD ≤ 22A, di/dt ≤ 360 A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. 2 www.irf.com IRFP22N60KPbF 100 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 100 ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) 10 1 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 0.1 5.0V 1 5.0V 0.01 0.001 0.1 1 20µs PULSE WIDTH Tj = 25°C 10 100 0.1 0.1 1 20µs PULSE WIDTH Tj = 150°C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.00 3.0 I D = 22A ID, Drain-to-Source Current (A) T J = 150°C RDS(on) , Drain-to-Source On Resistance 2.5 10.00 2.0 1.00 (Normalized) 1.5 T J = 25°C 0.10 1.0 0.01 5.0 6.0 7.0 VDS = 50V 20µs PULSE WIDTH 8.0 9.0 10.0 0.5 0.0 -60 -40 -20 0 20 40 60 80 100 V GS = 10V 120 140 160 VGS , Gate-to-Source Voltage (V) TJ, Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFP22N60KPbF 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss =C gd =C +C ds gd 20 ID= 22A VGS , Gate-to-Source Voltage (V) 16 10000 VDS= 480V VDS= 300V VDS= 120V C, Capacitance (pF) Ciss 1000 12 8 Coss 100 4 Crss 10 1 10 100 1000 0 0 40 80 120 160 Q G Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100.0 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD, Reverse Drain Current (A) ID, Drain-to-Source Current (A) 10.0 T J = 150°C 100 10 100µsec 1.0 T J = 25°C VGS = 0V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 Tc = 25°C Tj = 150°C Single Pulse 1 10 100 1msec 10msec 0.1 0.1 1000 10000 VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFP22N60KPbF 25 V DS VGS RD 20 RG VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -VDD ID , Drain Current (A) 15 10 Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 (Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +T C 1 J = P DM x Z thJC Thermal Response 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFP22N60KPbF 800 ID TOP BOTTOM 9.8A 14A 22A EAS , Single Pulse Avalanche Energy (mJ) 600 15V 400 VDS L DRIVER RG 200 D.U.T IAS + V - DD A 20V tp 0.01Ω Fig 12c. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 Starting T , J Junction Temperature ( °C) Fig 12a. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS I AS Fig 12d. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF .3µF QG VGS D.U.T. + V - DS QGS VG QGD VGS 3mA IG ID Current Sampling Resistors Charge Fig 13a. Gate Charge Test Circuit Fig 13b. Basic Gate Charge Waveform 6 www.irf.com IRFP22N60KPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFP22N60KPbF TO-247AC Package Outline 15.90 (.626) 15.30 (.602) -B3.65 (.143) 3.55 (.140) -A0.25 (.010) M D B M 5.50 (.217) 20.30 (.800) 19.70 (.775) 1 2 3 -C14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145) 0.80 (.031) 3X 0.40 (.016) C AS 2.60 (.102) 2.20 (.087) Dimensions are shown in millimeters (inches) -D5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 2X 5.50 (.217) 4.50 (.177) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) LEAD ASSIGNMENTS Hexfet IGBT 1 -LEAD ASSIGNMENTS Gate 1 - Gate 1 - GATE2 - Collector 2 - Drain 2 - DRAIN 3 - Source 3 - Emitter 3 - SOURCE 4 - Drain DRAIN - Collector 4 4- TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT ERNATIONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/03 8 www.irf.com