P-CHANNEL POWER MOSFET

www.DataSheet4U.com IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 2.41 (0.095) 0.127 (0.005) 3.175 (0.125) Max. P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 3.05 (0.120) 1 3 10.16 (0.400) 5.72 (.225) 2 -100V -11A Ω 0.30Ω 0.76 (0.030) min. 0.127 (0.005) 16 PLCS 0.50(0.020) 7.26 (0.286) 0.127 (0.005) 0.50 (0.020) max. • HERMETICALLY SEALED • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • SCREENING OPTIONS AVAILABLE SMD05 (TO-276AA) IRF9130SMD05 PAD1 = GATE PAD 2 DRAIN PAD3 = SOURCE • ALL LEADS ISOLATED FROM CASE IRFNJ9130 PAD1 = SOURCE PAD 2 = DRAIN PAD3 = GATE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RθJC Gate – Source Voltage Continuous Drain Current @ Tcase = 25°C Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case ±20V -11A -7A -50A 45W 0.36W/°C –55 to 150°C 2.8°C/W max. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk Document Number 5544 Issue 1 www.DataSheet4U.com IRFNJ9130 IRF9130SMD05 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ RDS(on) Breakdown Voltage Static Drain – Source On–State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = -11A VGS = 0 IS = -11A TJ = 25°C di / dt ≤ -100A/µs VDD ≤ 150V TJ = 25°C Test Conditions VGS = 0 ID = -1mA VGS = -10V VGS = -10V VDS = VGS VDS ≥ -15V VGS = 0 VGS = -20V VGS = 20V VGS = 0 VDS = 25V f = 1MHz VGS = -10V VDS = -50V ID = -11A VDD = -50V ID = -11A RG = 7.5Ω ID = -7A ID = -11A ID = -250µA IDS = -7A VDS = -80V TJ = 125°C ID = -1mA Min. -100 Typ. Max. Unit V Reference to 25°C -0.1 0.30 0.35 -2 3 -25 -250 -100 100 860 350 125 29 7.1 21 60 140 140 140 -11 -50 -4.7 250 3 -4 V / °C Ω V S(Ω µA nA )Ω( VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr pF nC ns A V ns µC Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk Document Number 5544 Issue 1