HEXFET Power MOSFET

PD- 95648 IRFIBE20GPbF • Lead-Free www.irf.com 1 7/26/04 IRFIBE20GPbF 2 www.irf.com IRFIBE20GPbF www.irf.com 3 IRFIBE20GPbF 4 www.irf.com IRFIBE20GPbF www.irf.com 5 IRFIBE20GPbF 6 www.irf.com IRFIBE20GPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + + - • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig -14 For N Channel HEXFETS www.irf.com 7 IRFIBE20GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432 AS S E MB L E D ON WW 24 1999 IN T H E AS S E MB L Y L IN E "K " P AR T N U MB E R IN T E R N AT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE IR F I840G 924K 34 32 Note: "P" in assembly line position indicates "Lead-Free" D AT E COD E YE AR 9 = 1999 WE E K 24 L IN E K Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 8 www.irf.com