SMPS MOSFET

PD - 95390 IRFIB5N50LPbF SMPS MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS(on) typ. Trr typ. ID • Telecom and Server Power Supplies 0.67Ω 500V 73ns 4.7A • Uninterruptible Power Supplies • Motor Control applications • Lead-Free Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate charge results in simpler drive requirements. • Enhanced dv/dt capabilities offer improved ruggedness. TO-220 Full-Pak • Higher Gate voltage threshold offers improved noise immunity. Absolute Maximum Ratings ID @ TC = 25°C www.DataSheet4U.com HEXFET® Power MOSFET Parameter Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 4.7 3.0 16 42 0.33 ±30 13 -55 to + 150 Units A W W/°C V V/ns °C ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM ™ PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and d Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.6mm from case ) 10lbxin (1.1Nxm) Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ù Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 73 99 200 360 6.7 4.7 A 16 1.5 110 150 310 540 10 A V ns Conditions MOSFET symbol showing the integral reverse G S D p-n junction diode. TJ = 25°C, IS = 4.0A, VGS = 0V TJ = 25°C, IF = 4.0A TJ = 125°C, di/dt = 100A/µs TJ = 125°C, di/dt = 100A/µs TJ = 25°C f f f f nC TJ = 25°C, IS = 4.0A, VGS = 0V Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com 1 06/10/04 IRFIB5N50LPbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS RG Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance Min. Typ. Max. Units 500 ––– ––– 3.0 ––– ––– ––– ––– ––– ––– 0.43 0.67 ––– ––– ––– ––– ––– 2.0 ––– ––– 0.80 5.0 50 2.0 100 -100 ––– Ω V Ω V µA mA nA Conditions VGS = 0V, ID = 250µA VGS = 10V, I D = 2.4A V/°C Reference to 25°C, ID = 1mA f VDS = VGS, ID = 250µA VDS = 500V, VGS = 0V VDS = 400V, VGS = 0V, TJ = 125°C VGS = 30V VGS = -30V f = 1MHz, open drain Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Coss eff. (ER) Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Effective Output Capacitance (Energy Related) Min. Typ. Max. Units 2.8 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 13 17 26 10 1000 110 12 1360 31 75 55 ––– 45 13 23 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF ns nC S ID = 4.0A Conditions VDS = 50V, ID = 2.4A VDS = 400V VGS = 10V, See Fig. 7 & 16 VDD = 250V ID = 4.0A RG = 9.0Ω VGS = 10V, See Fig. 11a & 11b VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 400V, ƒ = 1.0MHz VGS = 0V,VDS = 0V to 400V f f g Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentÙ Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 140 4.0 3.0 Units mJ A mJ ™ Thermal Resistance Symbol RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient Typ. ––– ––– Max. 3.0 65 Units °C/W  Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11). ‚ Starting TJ = 25°C, L = 18mH, RG = 25Ω, IAS = 4.0A, dv/dt = 13V/ns. (See Figure 12a). ƒ ISD ≤ 4.0, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Notes: „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff.(ER) is a fixed capacitance that stores the same energy as C oss while VDS is rising from 0 to 80% VDSS. 2 www.irf.com IRFIB5N50LPbF 100 TOP VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 100 TOP VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) 10 BOTTOM 1 BOTTOM 1 5.5V 0.1 5.5V 0.01 0.1 20µs PULSE WIDTH Tj = 25°C 0.001 0.1 1 10 100 0.01 0.1 1 20µs PULSE WIDTH Tj = 150°C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 I D = 4.0A 2.5 RDS(on) , Drain-to-Source On Resistance 10 TJ = 150 °C I D, Drain-to-Source Current (A) 2.0 1 TJ = 25 ° C (Normalized) 1.5 1.0 0.1 0.5 V DS 50V = 20µs PULSE WIDTH 0.01 5.0 6.0 7.0 8.0 9.0 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 V GS Gate-to-Source Voltage (V) , ° Tj, Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRFIB5N50LPbF 100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C SHORTED gs ds Crss = C gd Coss = C + C ds gd 10 9 8 7 10000 C, Capacitance(pF) 1000 Ciss Coss Crss Energy (µJ) 100 1000 6 5 4 3 100 10 2 1 1 1 10 0 0 100 200 300 400 500 600 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typ. Output Capacitance Stored Energy vs. VDS 12 100 I D = 4.0A 10 VDS = 400V VDS = 250V VDS = 100V VGS , Gate-to-Source Voltage (V) I SD , Reverse Drain Current (A) 8 10 6 T J= 25 ° C TJ = 150 ° C 1 4 2 V GS = 0 V 0.1 0 0 5 10 15 20 25 30 35 0.2 0.4 0.6 0.8 1.0 1.2 QG, Total Gate Charge (nC) V SD ,Source-to-Drain Voltage (V) Fig 7. Typical Gate Charge vs. Gate-to-Source Voltage Fig 8. Typical Source-Drain Diode Forward Voltage 4 www.irf.com IRFIB5N50LPbF 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 4.0 5.0 ID, Drain-to-Source Current (A) 10 ID , Drain Current (A) 3.0 100µsec 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 100 1msec 10msec 2.0 1.0 0.0 1000 10000 25 50 75 100 125 150 VDS, Drain-to-Source Voltage (V) TC , Case Temperature ( °C) Fig 9. Maximum Safe Operating Area Fig 10. Maximum Drain Current vs. Case Temperature V DS VGS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD VDS 90% D.U.T. + -VDD 10% VGS td(on) tr t d(off) tf Fig 11a. Switching Time Test Circuit Fig 11b. Switching Time Waveforms www.irf.com 5 IRFIB5N50LPbF 10 (Z thJC ) D = 0.50 1 0.20 Thermal Response 0.10 0.05 P DM 0.1 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 / t 2 +TC 1 10 t2 J = P DM x Z thJC t 1, Rectangular Pulse Duration (sec) Fig 12. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6.0 VGS(th) Gate threshold Voltage (V) 5.0 ID = 250µA 4.0 3.0 2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 13. Threshold Voltage vs.Temperature 6 www.irf.com IRFIB5N50LPbF 320 TOP BOTTOM ID 1.8A 2.5A 4.0A EAS , Single Pulse Avalanche Energy (mJ) 240 160 80 0 25 50 75 100 125 150 Starting Tj, Junction Temperature ( ° C) Fig 14. Maximum Avalanche Energy vs. Drain Current 15V V(BR)DSS VDS L DRIVER tp RG 20V D.U.T IAS tp + V - DD A 0.01Ω I AS Fig 15a. Unclamped Inductive Test Circuit Current Regulator Same Type as D.U.T. Fig 15b. Unclamped Inductive Waveforms 50KΩ 12V .2µF .3µF QG 10 V D.U.T. + V - DS QGS VG QGD VGS 3mA IG ID Current Sampling Resistors Charge Fig 16a. Gate Charge Test Circuit Fig 16b. Basic Gate Charge Waveform www.irf.com 7 IRFIB5N50LPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. For N-Channel HEXFET® Power MOSFETs 8 www.irf.com IRFIB5N50LPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information E X AM P L E : T H IS IS AN IR F I8 4 0G W IT H AS S E M B L Y L O T COD E 3 4 3 2 AS S E M B L E D O N W W 24 1 9 9 9 IN T H E AS S E M B L Y L IN E "K " P AR T N U M B E R IN T E R N AT ION AL R E CT I F IE R L OG O AS S E M B L Y L O T COD E IR F I84 0G 9 24 K 34 32 Note: "P" in assembly line position indicates "Lead-Free" D AT E CO D E Y E AR 9 = 1 9 9 9 W E E K 24 L IN E K TO-220AB FullPak package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo,