HEXFET Power MOSFET

PD - 97201 PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l150°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability IRFI4229PbF Key Parameters 250 300 38 32 150 D VDS max VDS (Avalanche) typ. RDS(ON) typ. @ 10V IRP max @ TC= 100°C TJ max D V V m: A °C G G D S S TO-220AB Full-Pak D S G Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. Gate Drain Source Absolute Maximum Ratings Parameter VGS ID @ TC = 25°C ID @ TC = 100°C IDM IRP @ TC = 100°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Repetitive Peak Current g Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 300 10lbxin (1.1Nxm) Typ. ––– ––– Max. 2.73 65 N Units °C/W Max. ±30 19 12 72 32 46 18 0.37 -40 to + 150 Units V A W W/°C °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case f Junction-to-Ambient f Notes  through … are on page 8 www.irf.com 1 04/07/06 IRFI4229PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgd tst EPULSE Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Drain Charge Shoot Through Blocking Time Energy per Pulse Min. 250 ––– ––– 3.0 ––– ––– ––– ––– ––– 26 ––– ––– 100 ––– ––– Typ. Max. Units ––– 340 38 ––– -12 ––– ––– ––– ––– ––– 73 24 ––– 770 1380 4480 400 100 270 4.5 7.5 ––– ––– 46 5.0 ––– 20 250 100 -100 ––– 110 ––– ––– ––– ––– ––– ––– ––– ––– ––– nH ––– pF ns µJ S nC nA V Conditions VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 11A e V mV/°C µA VDS = 250V, VGS = 0V VDS = 250V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 25V, ID = 11A VDD = 125V, ID = 11A, VGS = 10Ve VDD = 200V, VGS = 15V, RG= 5.1Ω L = 220nH, C= 0.3µF, VGS = 15V VDS = 200V, RG= 5.1Ω, TJ = 25°C L = 220nH, C= 0.3µF, VGS = 15V VDS = 200V, RG= 5.1Ω, TJ = 100°C VGS = 0V VDS = 25V ƒ = 1.0MHz, VGS = 0V, VDS = 0V to 200V Between lead, 6mm (0.25in.) from package and center of die contact G S D VDS = VGS, ID = 250µA Ciss Coss Crss Coss eff. LD LS Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Internal Drain Inductance Internal Source Inductance ––– ––– ––– ––– ––– ––– Avalanche Characteristics Parameter Typ. Max. Units mJ mJ V A EAS EAR VDS(Avalanche) IAS Single Pulse Avalanche Energyd Repetitive Avalanche Energy c Repetitive Avalanche Voltage Avalanche Current d c ––– ––– 300 ––– 110 4.6 ––– 11 Diode Characteristics Parameter IS @ TC = 25°C Continuous Source Current (Body Diode) ISM VSD trr Qrr Pulsed Source Current (Body Diode) c Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ––– ––– ––– ––– ––– ––– 120 540 72 1.3 180 810 V ns nC Min. ––– Typ. Max. Units ––– 18 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 11A, VGS = 0V e TJ = 25°C, IF = 11A, VDD = 50V di/dt = 100A/µs e 2 www.irf.com IRFI4229PbF 1000 TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 1000 TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 100 BOTTOM 10 BOTTOM 10 5.0V 1 1 0.1 5.0V ≤60µs PULSE WIDTH Tj = 25°C 0.01 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 0.1 0.1 1 ≤60µs PULSE WIDTH Tj = 150°C 10 100 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 RDS(on) , Drain-to-Source On Resistance (Normalized) Fig 2. Typical Output Characteristics 3.0 ID = 11A 2.5 2.0 1.5 1.0 0.5 0.0 ID, Drain-to-Source Current (A) VDS = 25V ≤60µs PULSE WIDTH VGS = 10V 10 1 T J = 150°C T J = 25°C 0.1 3 4 5 6 7 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics 1400 1200 Energy per Pulse (µJ) Fig 4. Normalized On-Resistance vs. Temperature 1400 1000 800 600 400 200 140 150 160 170 180 190 200 210 Energy per Pulse (µJ) L = 220nH C = 0.3µF 100°C 25°C 1200 1000 800 600 400 200 0 L = 220nH C = variable 100°C 25°C 100 110 120 130 140 150 160 170 VDS, Drain-to-Source Voltage (V) ID, Peak Drain Current (A) Fig 5. Typical EPULSE vs. Drain-to-Source Voltage Fig 6. Typical EPULSE vs. Drain Current www.irf.com 3 IRFI4229PbF 1800 1600 1400 Energy per Pulse (µJ) 100 L = 220nH C = 0.3µF ISD, Reverse Drain Current (A) 1200 1000 800 600 400 200 0 20 40 60 80 100 120 140 160 C = 0.1µF C = 0.2µF 10 T J = 150°C 1 T J = 25°C VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V) Temperature (°C) Fig 7. Typical EPULSE vs.Temperature 7000 6000 C, Capacitance (pF) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Fig 8. Typical Source-Drain Diode Forward Voltage 12.0 ID= 11A VGS, Gate-to-Source Voltage (V) 10.0 8.0 6.0 4.0 2.0 0.0 5000 4000 3000 2000 1000 0 1 VDS= 200V VDS= 125V VDS= 50V Ciss Coss Crss 10 100 1000 0 10 20 30 40 50 60 70 80 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 9. Typical Capacitance vs.Drain-to-Source Voltage 20 18 16 ID, Drain Current (A) Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec 10 1msec 10msec ID, Drain-to-Source Current (A) 100 14 12 10 8 6 4 2 0 25 50 75 100 125 150 T C , Case Temperature (°C) 1 0.1 Tc = 25°C Tj = 150°C Single Pulse 1 10 100 1000 0.01 VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Drain Current vs. Case Temperature Fig 12. Maximum Safe Operating Area 4 www.irf.com IRFI4229PbF RDS(on), Drain-to -Source On Resistance (m Ω) 200 180 160 140 120 100 80 60 40 20 0 5 6 7 8 9 10 T J = 25°C T J = 125°C 450 EAS , Single Pulse Avalanche Energy (mJ) ID = 11A 400 350 300 250 200 150 100 50 0 25 50 75 ID TOP 2.3A 2.7A BOTTOM 11A 100 125 150 Fig 13. On-Resistance vs. Gate Voltage 5.0 VGS(th) , Gate Threshold Voltage (V) VGS, Gate -to -Source Voltage (V) Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Temperature 60 50 Repetitive Peak Current (A) ton= 1µs Duty cycle = 0.25 Half Sine Wave Square Pulse 4.0 ID = 250µA 40 30 20 10 3.0 2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) 0 25 50 75 100 125 150 Case Temperature (°C) Fig 15. Threshold Voltage vs. Temperature 10 D = 0.50 0.20 0.10 0.05 0.02 0.01 Fig 16. Typical Repetitive peak Current vs. Case temperature Thermal Response ( Z thJC ) 1 0.1 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ri (°C/W) τi (sec) 0.3671 0.000287 1.0580 1.3076 0.162897 2.426 τ1 τ2 0.001 Ci= τi/Ri Ci τi/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-005 0.0001 0.001 0.01 0.1 1 10 100 0.0001 1E-006 t1 , Rectangular Pulse Duration (sec) Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFI4229PbF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • • • • di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Body Diode Forward Drop Inductor Curent Inductor Current Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS 15V tp DRIVER VDS L RG VGS 20V D.U.T IAS tp + V - DD A 0.01Ω I AS Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms Id Vds Vgs L 0 DUT 1K VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 20a. Gate Charge Test Circuit Fig 20b. Gate Charge Waveform 6 www.irf.com IRFI4229PbF A RG DRIVER L C VCC B RG Ipulse DUT Fig 21a. tst and EPULSE Test Circuit Fig 21b. tst Test Waveforms Fig 21c. EPULSE Test Waveforms www.irf.com 7 IRFI4229PbF TO-220AB Full-Pak Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Full-Pak Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAD'#Bà XDUCÃ6TT@H7G`à GPUÃ8P9@Ã"#"! 6TT@H7G@9ÃPIÃXXÃ!#Ã! DIÃUC@Ã6TT@H